Home << 1 2 3 4 5 >>
List View
 | 
Citations
 | 
Details
   web
Records
Author (up) Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
Title Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films Type Journal Article
Year 1995 Publication JETP Abbreviated Journal JETP
Volume 80 Issue 5 Pages 960-964
Keywords
Abstract The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number RPLAB @ phisix @ Serial 989
Permanent link to this record
 
 
Author (up) Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages 10089-10096
Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1766
Permanent link to this record
 
 
Author (up) Reiger, E.; Pan, D.; Slysz, W.; Jukna, A.; Sobolewski, R.; Dorenbos, S.; Zwiller, V.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Minaeva, O.; Gol'tsman, G.; Kitaygorsky, J.
Title Spectroscopy with nanostructured superconducting single photon detectors Type Journal Article
Year 2007 Publication IEEE J. Select. Topics Quantum Electron. Abbreviated Journal IEEE J. Select. Topics Quantum Electron.
Volume 13 Issue 4 Pages 934-943
Keywords SSPD, SNSPD
Abstract Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6 mu m). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1077-260X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1424
Permanent link to this record
 
 
Author (up) Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range Type Conference Article
Year 2004 Publication Proc. 29th IRMMW / 12th THz Abbreviated Journal Proc. 29th IRMMW / 12th THz
Volume Issue Pages 461-462
Keywords NbN SSPD, SNSPD
Abstract We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1507
Permanent link to this record
 
 
Author (up) Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M.
Title Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions Type Journal Article
Year 2011 Publication Rus. J. Radio Electron. Abbreviated Journal Rus. J. Radio Electron.
Volume Issue 10 Pages
Keywords terahertz electromagnetic radiation; superconductors; detectors of terahertz range
Abstract A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes 7 pages Approved no
Call Number Serial 1117
Permanent link to this record
 
 
Author (up) Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
Title Electron–phonon interaction in disordered conductors Type Journal Article
Year 1999 Publication Phys. Rev. B Condens. Matter Abbreviated Journal Phys. Rev. B Condens. Matter
Volume 263-264 Issue Pages 190-192
Keywords disordered conductors, electron-phonon interaction
Abstract The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1765
Permanent link to this record
 
 
Author (up) Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneev, A. A.; Chulkova, G. M.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Goltsman, G. N.
Title Non-bolometric bottleneck in electron-phonon relaxation in ultra-thin WSi film Type Miscellaneous
Year 2018 Publication arXiv Abbreviated Journal
Volume Issue Pages
Keywords WSi films, diffusion constant, SSPD, SNSPD
Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau{e-ph} = 140-190 ps at TC = 3.4 K, supporting the results of earlier measurements by independent techniques.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Duplicated as 1305 Approved no
Call Number Serial 1341
Permanent link to this record
 
 
Author (up) Sidorova, M. V.; Kozorezov, A. G.; Semenov, A. V.; Korneeva, Y. P.; Mikhailov, M. Y.; Devizenko, A. Y.; Korneev, A. A.; Chulkova, G. M.; Goltsman, G. N.
Title Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films Type Journal Article
Year 2018 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 97 Issue 18 Pages 184512 (1 to 13)
Keywords WSi films, diffusion constant, SSPD, SNSPD
Abstract We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1305
Permanent link to this record
 
 
Author (up) Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G.
Title Electron-phonon relaxation time in ultrathin tungsten silicon film Type Miscellaneous
Year 2018 Publication arXiv Abbreviated Journal
Volume Issue Pages
Keywords WSi film
Abstract Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Duplicated as 1341 Approved no
Call Number Serial 1340
Permanent link to this record
 
 
Author (up) Smirnov, K.; Korneev, A.; Minaeva, O.; Divochij, A.; Rubtsova, I.; Antipov, A.; Ryabchun, S.; Okunev, O.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Kaurova, N.; Seleznev, V.; Korotetskaya, Y.; Gol’tsman, G.
Title Superconducting single-photon detector for near- and middle IR wavelength range Type Conference Article
Year 2006 Publication Proc. 16th Int. Crimean Microwave and Telecommunication Technology Abbreviated Journal Proc. 16th Int. Crimean Microwave and Telecommunication Technology
Volume 2 Issue Pages 684-685
Keywords NbN SSPD, SNSPD
Abstract Presented in this paper are the results of research of NbN-film superconducting single-photon detector. At 2 K temperature, quantum efficiency in the visible light (0.56 mum) reaches 30-40 %. With the wavelength increase quantum efficiency decreases and comes to  20% at 1.55 mum and  0.02% at 5.6 mum. Minimum dark counts rate is 2times10-4s-1. The jitter of detector is 35 ps. The detector was successfully implemented for integrated circuits non-invasive optical testing. It is also perspective for quantum cryptography systems
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1447
Permanent link to this record
 
 
Author (up) Sobolewski, R.; Zhang, J.; Slysz, W.; Pearlman, A.; Verevkin, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Goltsman, G. N.
Title Ultrafast superconducting single-photon optical detectors Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5123 Issue Pages 1-11
Keywords NbN SSPD, SNSPD
Abstract We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Spigulis, J.; Teteris, J.; Ozolinsh, M.; Lusis, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Advanced Optical Devices, Technologies, and Medical Applications
Notes Approved no
Call Number Serial 1513
Permanent link to this record
 
 
Author (up) Słysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Zwiller, V.; Latta, C.; Böhi, P.; Pearlman, A.J.; Cross, A.S.; Pan, D.; Kitaygorsky, J.; Komissarov, I.; Verevkin, A.; Milostnaya, I.; Korneev, A.; Minayeva, O.; Chulkova, G.; Smirnov, K.; Voronov, B.; Gol’tsman, G.N.; Sobolewski, R.
Title Fibre-coupled, single photon detector based on NbN superconducting nanostructures for quantum communications Type Journal Article
Year 2007 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.
Volume 54 Issue 2-3 Pages 315-326
Keywords NbN SSPD, SNSPD
Abstract We present a novel, two-channel, single photon receiver based on two fibre-coupled, NbN, superconducting, single photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders and are known for ultrafast and efficient detection of visible-to-infrared photons. Coupling between the NbN detector and optical fibre was achieved using a micromechanical photoresist ring placed directly over the SSPD, holding the fibre in place. With this arrangement, we obtained coupling efficiencies up to ∼30%. Our experimental results showed that the best receiver had a near-infrared system quantum efficiency of 0.33% at 4.2 K. The quantum efficiency increased exponentially with the photon energy increase, reaching a few percent level for visible-light photons. The photoresponse pulses of our devices were limited by the meander high kinetic inductance and had the rise and fall times of approximately 250 ps and 5 ns, respectively. The receiver's timing jitter was in the 37 to 58 ps range, approximately 2 to 3 times larger than in our older free-space-coupled SSPDs. We stipulate that this timing jitter is in part due to optical fibre properties. Besides quantum communications, the two-detector arrangement should also find applications in quantum correlation experiments.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0950-0340 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1434
Permanent link to this record
 
 
Author (up) Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
Title Low energy excitation in La2CuO4 Type Journal Article
Year 1990 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume 3 Issue 5 Pages 832-837
Keywords metal-dielectric-La2CuO4, monocrystals
Abstract Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1688
Permanent link to this record
 
 
Author (up) Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
Title AC losses and submillimeter absorption in single crystals La2CuO4 Type Journal Article
Year 1990 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 165-166 Issue Pages 1269-1270
Keywords metal-dielectric-La2Cu04
Abstract The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1686
Permanent link to this record
 
 
Author (up) Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M.
Title Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5105 Issue Pages 160-170
Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices
Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Quantum Information and Computation
Notes Approved no
Call Number Serial 1514
Permanent link to this record