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Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. Dielectric characteristics of ore minerals in a 10–40 GHz frequency range 2008 Tech. Phys. Lett. 34 967-970 details   doi
Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. Optimization of on-chip photonic delay lines for telecom wavelengths 2018 J. Phys.: Conf. Ser. 1124 051052 details   doi
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency 2019 EPJ Web Conf. 220 02009 details   doi
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation 2020 J. Phys.: Conf. Ser. 1695 012118 details   doi
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate 1997 Phys. Rev. B 56 10089-10096 details   doi
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