Goltsman, G., Korneev, A., Izbenko, V., Smirnov, K., Kouminov, P., Voronov, B., et al. (2004). Nano-structured superconducting single-photon detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 520(1-3), 527–529.
Abstract: NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Goltsman, G., Korneev, A., Minaeva, O., Rubtsova, I., Chulkova, G., Milostnaya, I., et al. (2005). Advanced nanostructured optical NbN single-photon detector operated at 2.0 K. In M. Razeghi, & G. J. Brown (Eds.), Proc. SPIE (Vol. 5732, pp. 520–529). Spie.
Abstract: We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as 30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was 20% and decreased exponentially with the wavelength reaching 0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Gol’tsman, G. N., Smirnov, K., Kouminov, P., Voronov, B., Kaurova, N., Drakinsky, V., et al. (2003). Fabrication of nanostructured superconducting single-photon detectors. IEEE Trans. Appl. Supercond., 13(2), 192–195.
Abstract: Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Gol’tsman, G., Korneev, A., Tarkhov, M., Seleznev, V., Divochiy, A., Minaeva, O., et al. (2007). Middle-infrared ultrafast superconducting single photon detector. In 32nd IRMW / 15th ICTE (pp. 115–116).
Abstract: We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%.
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Gol’tsman, G., Okunev, O., Chulkova, G., Lipatov, A., Dzardanov, A., Smirnov, K., et al. (2001). Fabrication and properties of an ultrafast NbN hot-electron single-photon detector. IEEE Trans. Appl. Supercond., 11(1), 574–577.
Abstract: A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB.
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Gousev, Y. P., Olsson, H. K., Gol'tsman, G. N., Voronov, B. M., & Gershenzon, E. M. (1998). NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. In Proc. 9th Int. Symp. Space Terahertz Technol. (pp. 121–129).
Abstract: We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
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Hajenius, M., Barends, R., Gao, J. R., Klapwijk, T. M., Baselmans, J. J. A., Baryshev, A., et al. (2005). Local resistivity and the current-voltage characteristics of hot electron bolometer mixers. IEEE Trans. Appl. Supercond., 15(2), 495–498.
Abstract: Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte 2, P. A. J., Voronov, B., et al. (2004). Increased bandwidth of NbN phonon cooled hot electron bolometer mixers. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 381–386).
Abstract: We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Low noise NbN superconducting hot electron bolometer mixers at 1.9 and 2.5 THz. Supercond. Sci. Technol., 17(5), S224–S228.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance between the bolometer itself and the contact structure. Using a combination of in situ cleaning of the NbN film and the use of an additional superconducting interlayer of a 10 nm NbTiN layer between the Au of the contact structure and the NbN film superior noise temperatures have been obtained as low as 950 K at 2.5 THz and 750 K at 1.9 THz. Here we address in detail the DC characterization of these devices, the interface transparencies between the bolometers and the contacts and the consequences of these factors on the mixer performance.
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