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Author | Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. | ||||
Title | Ultrafast superconducting single-photon optical detectors and their applications | Type | Journal Article | ||
Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 13 | Issue | 2 | Pages | 1151-1157 |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 509 | |||
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Author | Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. | ||||
Title | 2.5 THz NbN hot electron mixer with integrated tapered slot antenna | Type | Journal Article | ||
Year | 1997 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 7 | Issue | 2 | Pages | 3548-3551 |
Keywords | NbN HEB mixers | ||||
Abstract | A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1595 | |||
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Author | Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. | ||||
Title | Spiral antenna NbN hot-electron bolometer mixer at submm frequencies | Type | Journal Article | ||
Year | 1997 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 7 | Issue | 2 | Pages | 3395-3398 |
Keywords | NbN HEB mixers | ||||
Abstract | We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1597 | |||
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Author | Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M. | ||||
Title | Slow electron–phonon cooling in superconducting diamond films | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-4 |
Keywords | superconducting diamond films, electron-phonon cooling | ||||
Abstract | We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1168 | |||
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Author | Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. | ||||
Title | A microwave-operated hot-electron-bolometric power detector for terahertz radiation | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2300604 (1 to 4) |
Keywords | NbN HEB mixer | ||||
Abstract | A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. | ||||
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ISSN | 1558-2515 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1354 | |||
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Author | Torgashin, M. Yu.; Koshelets, V. P.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Yagoubov, P. A. | ||||
Title | Superconducting integrated receivers based on Nb-AlN-NbN circuits | Type | Journal Article | ||
Year | 2007 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 17 | Issue | 2 | Pages | 379-382 |
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Call Number | RPLAB @ s @ mix_SIR_ieee_trans_2007 | Serial | 406 | ||
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Author | Torgashin, Mikhail Yu.; Koshelets, Valery P.; Dmitriev, Pavel N.; Ermakov, Andrey B.; Filippenko, Lyudmila V.; Yagoubov, Pavel A. | ||||
Title | Superconducting Integrated Receiver Based on Nb-AlN-NbN-Nb Circuits | Type | Journal Article | ||
Year | 2007 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 17 | Issue | 2 | Pages | 379-382 |
Keywords | SIR | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 525 | |||
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Author | Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikov, Sergey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory | ||||
Title | Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 21 | Issue | 3 | Pages | 620-623 |
Keywords | NbN HEB mixer bandwidth | ||||
Abstract | We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 716 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Blundell, R.; Ryabchun, S.; Gol'tsman, G. | ||||
Title | Probing the stability of HEB mixers with microwave injection | Type | Journal Article | ||
Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 25 | Issue | 3 | Pages | 2300404 (1 to 4) |
Keywords | NbN HEB mixer, stability, Allan-variance | ||||
Abstract | Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1355 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-5 |
Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1324 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Photon absorption near the gap frequency in a hot electron bolometer | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-4 |
Keywords | NBN HEB mixer | ||||
Abstract | The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I-V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap. | ||||
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ISSN | 1558-2515 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1331 | |||
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Author | Xiaolong Hu; Holzwarth, C.W.; Masciarelli, D.; Dauler, E.A.; Berggren, K.K. | ||||
Title | Efficiently coupling light to superconducting nanowire single-photon detectors | Type | Journal Article | ||
Year | 2009 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 19 | Issue | 3 | Pages | 336-340 |
Keywords | optical antennas; SNSPD | ||||
Abstract | We designed superconducting nanowire single-photon detectors (SNSPDs) integrated with silver optical antennae for free-space coupling and a dielectric waveguide for fiber coupling. According to our finite-element simulation, (1) for the free-space coupling, the absorptance of the NbN nanowire for TM-polarized photons at the wavelength of 1550 nm can be as high as 96% by adding silver optical antennae; (2) for the fiber coupling, the absorptance of the NbN nanowire for TE-like-polarized photons can reach 76% including coupling efficiency at the wavelength of 1550 nm by adding a silicon nitride waveguide and an inverse-taper coupler. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 647 | ||
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Author | Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. | ||||
Title | Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies | Type | Journal Article | ||
Year | 1999 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 9 | Issue | 2 | Pages | 3757-3760 |
Keywords | NbN HEB mixers | ||||
Abstract | The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. | ||||
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ISSN | 1051-8223 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1569 | |||
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Author | Yamashita, Taro; Miki, Shigehito; Qiu, Wei; Fujiwara, Mikio; Sasaki, Masahide; Wang, Zhen | ||||
Title | Temperature dependent performances of superconducting nanowire single-photon detectors in an ultralow-temperature region | Type | Journal Article | ||
Year | 2010 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
Volume | 21 | Issue | 3 | Pages | 336 - 339 |
Keywords | SNSPD | ||||
Abstract | We report on the performance of a fiber-coupled superconducting nanowire single-photon detector (SNSPD) from 4 K down to the ultralow temperature of 16 mK for a 1550 nm wave length. The system detection efficiency (DE) increased with de creasing the temperature and reached the considerably high value of 15% with a dark count rate less than 100 cps below 1.5 K, even without an optical cavity structure. We also observed saturation of the system DE in its bias current dependency at 16 mK, which indicates that the device DE of our SNSPD nearly reached intrinsic DE despite the device having a large active area of 20 μm × 20 μm. The dark count was finite even at 16 mK and the black body radiation becomes its dominant origin in the low temperatures for fiber-coupled devices. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 656 | ||
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