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Author  |
Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
| Title |
On-chip single-photon spectrometer for visible and infrared wavelength range |
Type |
Conference Article |
| Year |
2018 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1124 |
Issue |
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Pages |
051045 |
| Keywords |
single-photon spectrometer |
| Abstract |
Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors. |
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1742-6588 |
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1197 |
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| Author |
Kramer, B.; Chen, C-C.; Volakis, J.D. |
| Title |
The development of a mini-UWB antenna |
Type |
Journal Article |
| Year |
2004 |
Publication |
Measurement and Techniques Association Symposium |
Abbreviated Journal |
AMTA |
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Pages |
6 |
| Keywords |
optical antennas; Ultra Wide Band; Spiral Antenna, Dielectric Loading |
| Abstract |
There is a great interest in the automotive and military sectors for small and broadband antennas that meet modern communication needs. These needs require ultra-wide bandwidth (>10:1) UWB antennas, such as the spiral antenna. However, the physical size at the low-frequency end typically becomes too large for practical applications. To reduce the size of the antenna, miniaturization techniques must be employed such as the use of high-contrast dielectric materials. Size reduction using high-contrast materials has been demonstrated for narrowband antennas, such as patch antennas, but not for broadband antennas to our knowledge. Therefore, the concept of miniaturizing a broadband spiral antenna using dielectric materials will be investigated experimentally and numerically.Issues that arise from dielectric loading such as impedance reduction will also be addressed. It will be shown using the results from these studies that there are practical limitations to the amount of miniaturization which can be achieved. |
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RPLAB @ gujma @ |
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751 |
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Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
| Title |
HEB quasi-optical heterodyne receiver for THz frequencies |
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Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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244-252 |
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HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
| Title |
Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
| Keywords |
RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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| Author |
Lee, Ju-Hyun; Kim, Dong-Woo; Wu, Yung-Hsun; Yu, Chang-Jae; Lee, Sin-Doo; Wu, Shin-Tson |
| Title |
High-speed infrared phase modulators using short helical pitch ferroelectric liquid crystals |
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Journal Article |
| Year |
2005 |
Publication |
Optics Express |
Abbreviated Journal |
Opt. Express |
| Volume |
13 |
Issue |
20 |
Pages |
7732 |
| Keywords |
IR modulator |
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1094-4087 |
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541 |
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