| Records |
| Author |
Gershenzon, E. M.; Gol'tsman, G. N. |
| Title |
Hot electron superconductive mixers |
Type |
Conference Article |
| Year |
1993 |
Publication |
Proc. 4th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 4th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
618-622 |
Keywords  |
HEB mixers |
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no |
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Serial |
1656 |
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| Author |
Kollberg, Erik L.; Gershenzon, E.; Goltsman, G.; Yngvesson, K. S. |
| Title |
Hot electron mixers, the potential competition |
Type |
Conference Article |
| Year |
1992 |
Publication |
Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
Abbreviated Journal |
Proc. ESA Symp. on Photon Detectors for Space Instrumentation |
| Volume |
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Issue |
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Pages |
201-206 |
| Keywords |
HEB mixers |
| Abstract |
There is an urgent need in radio astronomy for low noise heterodyne receivers for frequencies above about 500 GHz. It is not certain that mixers based on superconducting quasiparticle tunnelling (SIS mixers) may turn out to be the answer to this need. In order to try to find an alternative way for realizing low noise heterodyne receivers for submillimeter waves, so called hot electron bolometric effects for mixing are now being investigated. Two basically different approaches are tried, one based on semiconductors and one on superconductors. Both methods are briefly discussed in this overview paper. |
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ESA Symposium on Photon Detectors for Space Instrumentation |
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no |
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Serial |
1667 |
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| Author |
Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
| Title |
Characterization of the electron energy relaxation process in NbN hot-electron devices |
Type |
Conference Article |
| Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
390-397 |
| Keywords |
HEB mixers, SSPD, SNSPD, NbN films, Nb films |
| Abstract |
We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth. |
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Serial |
1576 |
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| Author |
Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Gol'tsman, G. N. |
| Title |
NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling |
Type |
Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 20th ISSTT |
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Issue |
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Pages |
151-154 |
| Keywords |
HEB, mixer, bandwidth, noise temperatue, in-situ contacts, in situ contacts |
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Place of Publication |
Charlottesville, USA |
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Serial |
590 |
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| Author |
Cao, Aiqin; Jiang, L.; Chen, S.H.; Antipov, S.V.; Shi, S.C. |
| Title |
IF gain bandwidth of a quasi-optical NbN superconducting HEB mixer |
Type |
Conference Article |
| Year |
2007 |
Publication |
Proc. International conference on microwave and millimeter wave technology |
Abbreviated Journal |
Proc. ICMMT |
| Volume |
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Issue |
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Pages |
1-3 |
| Keywords |
HEB, mixer, gain bandwidth |
| Abstract |
In this paper, the intermediate frequency (IF) gain bandwidth of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer is investigated at 500 GHz with an IF system incorporating with a frequency down-converting scheme which is able to sweep the IF signal in a frequency range of 0.3-4 GHz. The IF gain bandwidth of the device is measured to be 1.5 GHz when it is biased at a voltage of the minimum noise temperature, and becomes larger when the bias voltage increases. |
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Place of Publication |
Builin |
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RPLAB @ lobanovyury @ |
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575 |
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