Home << 1 2 >>
List View
 | 
Citations
 | 
Details
   web
Records
Author (down) Смирнов, Константин Владимирович
Title Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе Type Manuscript
Year 2000 Publication М. МПГУ Abbreviated Journal
Volume Issue Pages
Keywords 2DEG, AlGaAs/GaAs heterostructures, NbN films
Abstract Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств.
Address Москва, МПГУ
Corporate Author Thesis Ph.D. thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1830
Permanent link to this record
 
 
Author (down) Корнеев, А. А.; Окунев, О. В.; Чулкова, Г. М.; Смирнов, К. В.; Милостная, И. И.; Минаева, О. В.; Корнеева, Ю. П.; Каурова, Н. С.; Воронов, Б. М.; Гольцман, Г. Н.
Title Спонтанные и фотоиндуцированные резистивные состояния в узких сверхпроводящих NbN полосках Type Book Whole
Year 2015 Publication Abbreviated Journal
Volume Issue Pages
Keywords NbN films
Abstract Монография посвящена актуальной проблеме современной фотоники: разработке высокочувствительных и быстродействующих сверхпроводниковых однофотонных детекторов на основе тонкой пленки NbN. В работе исследуются неравновесные процессы, протекающие в тонкой сверхпроводящей пленке после поглощения инфракрасного фотона и приводящие к возникновению резистивного состояния. На этих процессах основан механизм фотоотклика исследуемого в работе однофотонного детектора. В частности, исследуются зависимости квантовой эффективности и скорости темнового счета от геометрических параметров детектора: толщины пленки, ширины полоски, а также от величины транспортного тока детектора. Монография предназначена для студентов старших курсов, аспирантов и начинающих исследователей, работающих в области сверхпроводниковой наноэлектроники и радиофизики.
Address Москва
Corporate Author Thesis
Publisher МПГУ Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN 978-5-4263-0269-3 Medium
Area Expedition Conference
Notes УДК: 535; Число страниц: 108 Approved no
Call Number Serial 1812
Permanent link to this record
 
 
Author (down) Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D.
Title Superconductive properties of ultrathin NbN films on different substrates Type Journal Article
Year 1994 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume 7 Issue 6 Pages 1097-1102
Keywords NbN films
Abstract A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0131-5366 ISBN Medium
Area Expedition Conference
Notes Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках Approved no
Call Number Serial 1631
Permanent link to this record
 
 
Author (down) Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N.
Title Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012190
Keywords NbN films, insulating membrane
Abstract Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1165
Permanent link to this record
 
 
Author (down) Manova, N. N.; Simonov, N. O.; Korneeva, Y. P.; Korneev, A. A.
Title Developing of NbN films for superconducting microstrip single-photon detector Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012116 (1 to 5)
Keywords NbN SSPD, SNSPD, NbN films
Abstract We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1786
Permanent link to this record
 
 
Author (down) Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R.
Title Ultrafast and high quantum efficiency large-area superconducting single-photon detectors Type Conference Article
Year 2007 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6583 Issue Pages 65830I (1 to 9)
Keywords SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors
Abstract We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped  0.5-mm-long and  100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of  30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.
Address
Corporate Author Thesis
Publisher Spie Place of Publication Editor Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1249
Permanent link to this record
 
 
Author (down) Il'in, K.; Siegel, M.; Semenov, A.; Engel, A.; Hübers, H.-W.; Hollmann, E.; Gol'tsman, G.; Voronov, B.
Title Thickness dependence of superconducting properties of ultrathin Nb and NbN films Type Conference Article
Year 2004 Publication AKF-Frühjahrstagung Abbreviated Journal
Volume Issue Pages
Keywords Nb, NbN films, has potential plagiarism
Abstract
Address Berlin-Adlershof
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1503
Permanent link to this record
 
 
Author (down) Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 390-397
Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1576
Permanent link to this record
 
 
Author (down) Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G.
Title Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation Type Journal Article
Year 2014 Publication Nanotechnologies in Russia Abbreviated Journal Nanotechnologies in Russia
Volume 9 Issue 7 Pages 386-390
Keywords superconducting NbN films composite ion beam irradiation protoning
Abstract In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut” are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1000
Permanent link to this record
 
 
Author (down) Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
Title Electron-phonon interaction in disordered NbN films Type Journal Article
Year 1994 Publication Phys. B Condens. Mat. Abbreviated Journal Phys. B Condens. Mat.
Volume 194-196 Issue Pages 1355-1356
Keywords NbN films
Abstract Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0921-4526 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1649
Permanent link to this record