Records |
Author |
Wyss, R. A.; Karasik, B. S.; McGrath, W. R.; Bamble, B.; LeDuc, H. |
Title |
Noise and bandwidth measurements of diffusion–cooled Nb hot–electron bolometer mixers at frequencies above the superconductive energy gap |
Type |
Conference Article |
Year |
1999 |
Publication |
Proc. 10th Int. Symp. Space Terahertz Technol. |
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Pages |
215-229 |
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Charlottesville, Virginia |
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RPLAB @ s @ qoheb_Tn_1250_at_1p1 |
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293 |
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Author |
Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film |
Type |
Journal Article |
Year |
1996 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
68 |
Issue |
10 |
Pages |
1418-1420 |
Keywords |
YBCO HTS HEB mixers |
Abstract |
Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
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0003-6951 |
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no |
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1613 |
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Author |
Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
Title |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film |
Type |
Conference Article |
Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
337-348 |
Keywords |
YBCO HTS HEB mixers |
Abstract |
Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range. |
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1615 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
Volume |
263-264 |
Issue |
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Pages |
190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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Edition |
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ISSN |
0921-4526 |
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no |
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Serial |
1765 |
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Author |
Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
Type |
Journal Article |
Year |
1994 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
Volume |
49 |
Issue |
13 |
Pages |
9091-9096 |
Keywords |
YBCO films |
Abstract |
The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface. |
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0163-1829 |
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Notes |
PMID:10009690 |
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no |
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Serial |
1648 |
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Author |
Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Title |
Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation |
Type |
Journal Article |
Year |
1992 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
72 |
Issue |
11 |
Pages |
5496-5499 |
Keywords |
YBCO HTS detectors |
Abstract |
We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds. |
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0021-8979 |
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no |
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1668 |
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Author |
Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. |
Title |
Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses |
Type |
Journal Article |
Year |
1993 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
Volume |
18 |
Issue |
2 |
Pages |
96-97 |
Keywords |
YBCO HTS detectors |
Abstract |
We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment. |
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English |
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0146-9592 |
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PMID:19802049 |
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no |
Call Number |
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Serial |
1660 |
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Author |
Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
Title |
Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses |
Type |
Journal Article |
Year |
1993 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
3 |
Issue |
1 |
Pages |
2160-2162 |
Keywords |
YBCO HTS detectors |
Abstract |
The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment. |
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no |
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Serial |
1658 |
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Author |
Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. |
Title |
Optical mixing in a patterned YBa2Cu3O7-δ thin film |
Type |
Journal Article |
Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
65 |
Issue |
26 |
Pages |
3398-3400 |
Keywords |
YBCO HTS HEB mixer, bandwidth |
Abstract |
Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. |
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0003-6951 |
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no |
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251 |
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Lindgren, M.; Trifonov, V.; Zorin, M.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E.M. |
Title |
Transient resistive photoresponse of YBa2Cu3O7−δ films using low power 0.8 and 10.6 μm laser radiation |
Type |
Journal Article |
Year |
1994 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
64 |
Issue |
22 |
Pages |
3036-3038 |
Keywords |
YBCO HTS HEB, nonequilibrium |
Abstract |
Thin YBa2Cu3O7−δ laser deposited films were patterned into devices consisting of ten parallel 1 μm wide strips. Nonequilibrium picosecond and bolometric photoresponses were studied by the use of 17 ps full width at half‐maximum laser pulses and amplitude modulated radiation from an AlGaAs laser up to 10 GHz and from a CO2 laser up to 1 GHz. The time and frequency domain measurements were in agreement. The fast response can be explained by electron heating. The use of low optical power and a sensitive measurement system excluded any nonlinear transient processes and kinetic inductance changes in the superconducting state. At 1 GHz modulation frequency, the responsivity was ∼1.2 V/W both for 0.8 and 10.6 μm wavelengths. The sensitivity of a fast and spectrally broadband infrared detector is discussed. |
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0003-6951 |
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no |
Call Number |
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Serial |
1639 |
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Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse |
Type |
Journal Article |
Year |
1995 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
Volume |
77 |
Issue |
8 |
Pages |
4064-4070 |
Keywords |
YBCO HTS switches |
Abstract |
A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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0021-8979 |
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no |
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Serial |
1623 |
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Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films |
Type |
Conference Article |
Year |
1994 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
2160 |
Issue |
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Pages |
74-82 |
Keywords |
YBCO HTS switches |
Abstract |
We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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SPIE |
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Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W. |
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Superconductive Devices and Circuits |
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no |
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Serial |
1638 |
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Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M. |
Title |
High speed current switching of homogeneous YBaCuO film between superconducting and resistive states |
Type |
Journal Article |
Year |
1995 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
5 |
Issue |
2 |
Pages |
3042-3045 |
Keywords |
YBCO HTS HEB switches |
Abstract |
Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively. |
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1051-8223 |
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no |
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1620 |
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Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon scattering rate in impure NbC films |
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Abstract |
Year |
1998 |
Publication |
NASA/ADS |
Abbreviated Journal |
NASA/ADS |
Volume |
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Issue |
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Pages |
Y35.08 |
Keywords |
NbC films |
Abstract |
The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
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1591 |
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Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer |
Type |
Journal Article |
Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
68 |
Issue |
16 |
Pages |
2285-2287 |
Keywords |
HEB mixer, diffusion cooling channel, diffusion channel |
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ISSN |
0003-6951 |
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Serial |
262 |
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