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Baksheeva, K.; Vdovydchenko, A.; Gorshkov, K.; Ozhegov, R.; Kinev, N.; Koshelets, V.; Goltsman, G. Study of human skin radiation in the terahertz frequency range 2019 J. Phys.: Conf. Ser. 10.1088/1742-6596/1410/1/012076 details   doi
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors 2018 Appl. Phys. Lett. 10.1063/1.5018151 details   doi
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. Response of carbon nanotube film transistor to the THz radiation 2018 EPJ Web Conf. 10.1051/epjconf/201819505012 details   doi
Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob ALMA band 5 (163-211 GHz) sideband separation mixer 2009 Proc. 20th Int. Symp. Space Terahertz Technol. details   openurl
Dieleman, Piter Fundamental limitations of THz niobium and niobiumnitride SIS mixers 1998 details   pdf openurl
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors 2015 Carbon 10.1016/j.carbon.2015.01.060 details   doi
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 10.1002/aelm.202000872 details   doi
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. Response of graphene based gated nanodevices exposed to THz radiation 2015 EPJ Web of Conferences 10.1051/epjconf/201510310003 details   doi
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts 2018 Materials Today: Proc. 10.1016/j.matpr.2018.08.155 details   doi
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. Towards to the development of THz detectors based on carbon nanostructures 2018 J. Phys.: Conf. Ser. 10.1088/1742-6596/1092/1/012039 details   doi
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. Tunnel field-effect transistors for sensitive terahertz detection 2021 Nat. Commun. 10.1038/s41467-020-20721-z details   doi
Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. Electron heating in metallic resistors at sub-Kelvin temperature 2007 Phys. Rev. B 10.1103/PhysRevB.76.165426 details   doi
Jackson, B. D.; Hesper, R.; Adema, J.; Barkhof, J.; Baryshev, A. M.; Zijlstra, T.; Zhu, S.; Klapwijk, T. M. Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA 2009 Proc. 20th Int. Symp. Space Terahertz Technol. details   openurl
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. Relaxation of the resistive superconducting state in boron-doped diamond films 2016 Phys. Rev. B 10.1103/PhysRevB.93.064506 details   doi
Karpov, A.; Miller, D.; Stern, J. A.; Bumble, B.; LeDuc, H. G.; Zmuidzinas, J. Broadband SIS mixer for 1 THz Band 2009 Proc. 20th Int. Symp. Space Terahertz Technol. details   openurl
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