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Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Vreeling, W. J.; Wild, W.; Pylypenko, O. M. |
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Title |
Superconducting submm integrated receiver for TELIS |
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Conference Article |
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2006 |
Publication |
J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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43 |
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1377-1380 |
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SIR |
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1742-6588 |
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514 |
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Koshelets, V. P.; Shitov, S. V.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Pylypenko, O. M. |
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Title |
Superconducting integrated receiver for TELIS |
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Journal Article |
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Year |
2005 |
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IEEE Trans. Appl. Supercond. |
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Volume |
15 |
Issue |
2 |
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960-963 |
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SIR |
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517 |
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Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Conference Article |
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Year |
1998 |
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Proc. 28th European Microwave Conf. |
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Proc. 28th European Microwave Conf. |
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1 |
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294-299 |
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NbN HEB mixers |
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In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
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Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
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Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
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Keywords |
NbN HEB mixers |
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A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
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1595 |
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Torgashin, M. Yu.; Koshelets, V. P.; Dmitriev, P. N.; Ermakov, A. B.; Filippenko, L. V.; Yagoubov, P. A. |
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Title |
Superconducting integrated receivers based on Nb-AlN-NbN circuits |
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Journal Article |
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Year |
2007 |
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IEEE Trans. Appl. Supercond. |
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Volume |
17 |
Issue |
2 |
Pages |
379-382 |
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RPLAB @ s @ mix_SIR_ieee_trans_2007 |
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406 |
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