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Kitaygorsky, J., Komissarov, I., Jukna, A., Pan, D., Minaeva, O., Kaurova, N., et al. (2007). Dark counts in nanostructured nbn superconducting single-photon detectors and bridges. IEEE Trans. Appl. Supercond., 17(2), 275–278.
Abstract: We present our studies on dark counts, observed as transient voltage pulses, in current-biased NbN superconducting single-photon detectors (SSPDs), as well as in ultrathin (~4 nm), submicrometer-width (100 to 500 nm) NbN nanobridges. The duration of these spontaneous voltage pulses varied from 250 ps to 5 ns, depending on the device geometry, with the longest pulses observed in the large kinetic-inductance SSPD structures. Dark counts were measured while the devices were completely isolated (shielded by a metallic enclosure) from the outside world, in a temperature range between 1.5 and 6 K. Evidence shows that in our two-dimensional structures the dark counts are due to the depairing of vortex-antivortex pairs caused by the applied bias current. Our results shed some light on the vortex dynamics in 2D superconductors and, from the applied point of view, on intrinsic performance of nanostructured SSPDs.
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Khasminskaya, S., Pyatkov, F., Słowik, K., Ferrari, S., Kahl, O., Kovalyuk, V., et al. (2016). Fully integrated quantum photonic circuit with an electrically driven light source. Nat. Photon., 10(11), 727–732.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Papa, D. C., Hunter, T. R., Paine, S. N., et al. (2000). Superconductive hot-electron-bolometer mixer receiver for 800-GHz operation. IEEE Trans. Microw. Theory Techn., 48(4), 683–689.
Abstract: In this paper, we describe a superconductive hot-electron-bolometer mixer receiver designed to operate in the partially transmissive 350-μm atmospheric window. The receiver employs an NbN thin-film microbridge as the mixer element, in which the main cooling mechanism of the hot electrons is through electron-phonon interaction. At a local-oscillator frequency of 808 GHz, the measured double-sideband receiver noise temperature is TRX=970 K, across a 1-GHz intermediate-frequency bandwidth centered at 1.8 GHz. We have measured the linearity of the receiver and the amount of local-oscillator power incident on the mixer for optimal operation, which is PLO≈1 μW. This receiver was used in making observations as a facility instrument at the Heinrich Hertz Telescope, Mt. Graham, AZ, during the 1998-1999 winter observing season.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., & Voronov, B. (1995). NbN hot-electron mixer measurements at 200 GHz. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 254–261).
Abstract: We present noise and gain measurements of resistively driven NbN hot-electron mixers near 200 GHz. The device geometry is chosen so that the dominant cooling process of the hot-electrons is their interaction with the lattice. Except for a single batch, the intermediate frequency cut-off of these mixer elements is – 3 700 MHz, and has shown little variation among other batches of devices. At 100 MHz we measured intrinsic mixer losses as low as —3 dB. We measured the noise temperatures at several intermediate frequencies, and for the best de- vice at 137 MHz with 20 MHz bandwidth, we measured 2000 K; using a low-noise first- stage amplifier at 1.5 GHz with 200 MHz bandwidth, the receiver noise temperature measured 2800 K. We estimate that the noise contribution from the mixer is 500 K and the total losses are —15 dB at 137 MHz.
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Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
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Kawamura, J. H., Tong, C. - Y. E., Blundell, R., Cosmo Papa, D., Hunter, T. R., Gol'tsman, G., et al. (1999). An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver. IEEE Trans. Appl. Supercond., 9(2), 3753–3756.
Abstract: We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines.
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Kaurova, N. S., Finkel, M. I., Maslennikov, S. N., Vahtomin, Y. B., Antipov, S. V., Smirnov, K. V., et al. (2004). Submillimeter mixer based on YBa2Cu3O7-x thin film. In Proc. 1-st conf. Fundamental problems of high temperature superconductivity (291). Moscow-Zvenigorod.
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Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1994). Subnanosecond S-N and N-S switching of YBCO film induced by current pulse. Phys. C: Supercond., 235-240, 1981–1982.
Abstract: A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made.
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Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1995). High speed current switching of homogeneous YBaCuO film between superconducting and resistive states. IEEE Trans. Appl. Supercond., 5(2), 3042–3045.
Abstract: Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
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Karasik, B. S., Il'in, K. S., Ptitsina, N. G., Gol'tsman, G. N., Gershenzon, E. M., Pechen', E. V., et al. (1998). Electron-phonon scattering rate in impure NbC films. In NASA/ADS (Y35.08).
Abstract: The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
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