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Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram | ||||
| Title | Photonic integration meets single-photon detection | Type | Miscellaneous | ||
| Year | 2015 | Publication | Laser Focus World | Abbreviated Journal | Laser Focus World |
| Volume | 51 | Issue | 5 | Pages | 47-50 |
| Keywords | optical waveguide SSPD, SNSPD | ||||
| Abstract | By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ akorneev @ | Serial | 1126 | ||
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| Author |
Korneev, Alexander; Korneeva, Yulia; Florya, Irina; Elezov, Michael; Manova, Nadezhda; Tarkhov, Michael; An, Pavel; Kardakova, Anna; Isupova, Anastasiya; Chulkova, Galina; Voronov, Boris | ||||
| Title | Recent advances in superconducting NbN single-photon detector development | Type | Conference Article | ||
| Year | 2011 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 8072 | Issue | Pages | 807202 (1 to 10) | |
| Keywords | SSPD | ||||
| Abstract | Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 663 | ||
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| Author |
Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. | ||||
| Title | Single photon detection in micron scale NbN and α-MoSi superconducting strips | Type | Conference Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 190 | Issue | Pages | 04010 (1 to 2) | |
| Keywords | SSPD | ||||
| Abstract | We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1319 | |||
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| Author |
Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. | ||||
| Title | Optical single photon detection in micron-scaled NbN bridges | Type | Miscellaneous | ||
| Year | 2018 | Publication | arXiv | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | SSPD | ||||
| Abstract | We demonstrate experimentally that single photon detection can be achieved in micron-wide NbN bridges, with widths ranging from 0.53 μm to 5.15 μm and for photon-wavelengths from 408 nm to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50 % of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors (SSPDs), based on nanometer scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modelling based on the theory of non-equilibrium superconductivity including the vortex-assisted mechanism of initial dissipation. | ||||
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| Notes | Duplicated as 1303 | Approved | no | ||
| Call Number | Serial | 1312 | |||
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| Author |
Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory | ||||
| Title | Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption | Type | Conference Article | ||
| Year | 2017 | Publication | IEEE Transactions on Applied Superconductivity | Abbreviated Journal | IEEE Transactions on Applied Superconductiv |
| Volume | 27 | Issue | 4 | Pages | 5 |
| Keywords | Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors | ||||
| Abstract | In superconducting single-photon detectors SSPD the efficiency of local suppression of superconductivity and hotspot formation is controlled by diffusivity and electron-phonon interaction time. Here we selected a material, 3.6-nm-thick MoNx film, which features diffusivity close to those of NbN traditionally used for SSPD fabrication, but with electron-phonon interaction time an order of magnitude larger. In MoNx detectors we study the dependence of detection efficiency on bias current, photon energy, and strip width and compare it with NbN SSPD. We observe non-linear current-energy dependence in MoNx SSPD and more pronounced plateaus in dependences of detection efficiency on bias current which we attribute to longer electronphonon interaction time. |
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1114 | ||
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| Author |
Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. | ||||
| Title | Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures | Type | Abstract | ||
| Year | 2019 | Publication | Proc. Amorphous and Nanostructured Chalcogenides | Abbreviated Journal | Proc. Amorphous and Nanostructured Chalcogenides |
| Volume | Issue | Pages | 47-48 | ||
| Keywords | optical waveguides | ||||
| Abstract | The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. | ||||
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| Publisher | Technical University of Moldova | Place of Publication | Editor | ||
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| Notes | Poster | Approved | no | ||
| Call Number | Serial | 1281 | |||
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| Author |
Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. | ||||
| Title | Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application | Type | Conference Article | ||
| Year | 2017 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 917 | Issue | Pages | 062032 | |
| Keywords | SSPD, SNSPD, waveguide | ||||
| Abstract | With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1140 | ||
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| Author |
Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Yu; Shcherbatenko, M.; Korneev, A; Pernice, W.; Goltsman, G. | ||||
| Title | Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application | Type | Conference Volume | ||
| Year | 2017 | Publication | Proc. SPBOPEN | Abbreviated Journal | Proc. SPBOPEN |
| Volume | Issue | Pages | 421-422 | ||
| Keywords | waveguide, SSPD, SNSPD | ||||
| Abstract | By adopting a travelling-wave geometry approach, integrated superconductor- nanophotonic devices were fabricated. The architecture consists of a superconducting NbN- nanowire atop of a silicon nitride (Si 3 N 4 ) nanophotonic waveguide. NbN-nanowire was operated as a single-photon counting detector, with up to 92% on-chip detection efficiency (OCDE), in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 10^6 in C-band at 1550 nm wavelength. | ||||
| Address | St. Petersburg, Russia | ||||
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| Notes | Duplicated as 1140 | Approved | no | ||
| Call Number | Serial | 1256 | |||
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| Author |
Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
| Title | On-chip single-photon spectrometer for visible and infrared wavelength range | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051045 | |
| Keywords | single-photon spectrometer | ||||
| Abstract | Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors. | ||||
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| ISSN | 1742-6588 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1197 | |||
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| Author |
Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. | ||||
| Title | Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method | Type | Conference Article | ||
| Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
| Volume | Issue | Pages | 30-32 | ||
| Keywords | NbN HEB, GaN buffer layer | ||||
| Abstract | In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1202 | |||
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