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Author  |
Kok, Pieter |
| Title |
Quantum optics: Entangled photons report for duty |
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Journal Article |
| Year |
2010 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nat. Photon. |
| Volume |
4 |
Issue |
8 |
Pages |
504-505 |
| Keywords |
fromIPMRAS |
| Abstract |
Entangled photons are a key ingredient in optical quantum technologies, but researchers have so far been unable to produce a single pair of entangled photons. Now, two groups from China and Austria independently report just that, with a technique that avoids the need to infer entanglement from detection signatures. |
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RPLAB @ gujma @ |
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772 |
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Kawano, Yukio; Ishibashi, Koji |
| Title |
An on-chip near-field terahertz probe and detector |
Type |
Journal Article |
| Year |
2008 |
Publication |
Nature Photonics |
Abbreviated Journal |
Nature Photon |
| Volume |
2 |
Issue |
10 |
Pages |
618-621 |
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single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications |
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The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. |
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1749-4885 |
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570 |
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He, Rongrui; Sazio, Pier J. A.; Peacock, Anna C.; Healy, Noel; Sparks, Justin R.; Krishnamurthi, Mahesh; Gopalan, Venkatraman; Badding, John V. |
| Title |
Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres |
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Journal Article |
| Year |
2012 |
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Nature Photonics |
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Nat. Photon. |
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6 |
Issue |
3 |
Pages |
174-179 |
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fromIPMRAS |
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The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres. |
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RPLAB @ gujma @ |
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783 |
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Hase, Muneaki; Katsuragawa, Masayuki; Constantinescu, Anca Monia; Petek, Hrvoje |
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Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon |
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Journal Article |
| Year |
2012 |
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Nature Photonics |
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Nat. Photon. |
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6 |
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243–247 |
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fromIPMRAS |
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High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency. |
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RPLAB @ gujma @ |
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794 |
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| Author |
Hadfield, Robert H. |
| Title |
Single-photon detectors for optical quantum information applications |
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Journal Article |
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2009 |
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Nature Photonics |
Abbreviated Journal |
Nature Photonics |
| Volume |
3 |
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696-705 |
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SPD |
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The past decade has seen a dramatic increase in interest in new single-photon detector technologies. A major cause of this trend has undoubtedly been the push towards optical quantum information applications such as quantum key distribution. These new applications place extreme demands on detector performance that go beyond the capabilities of established single-photon detectors. There has been considerable effort to improve conventional photon-counting detectors and to transform new device concepts into workable technologies for optical quantum information applications. This Review aims to highlight the significant recent progress made in improving single-photon detector technologies, and the impact that these developments will have on quantum optics and quantum information science. |
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RPLAB @ gujma @ |
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678 |
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