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Mason, Whitney; Waterman, J. R. |
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Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors |
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1999 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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74 |
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11 |
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1633-1635 |
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0003-6951 |
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RPLAB @ s @ |
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461 |
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Marazita, St.even M.; Kai Hui; Hesler, Jeffrey L.; Bishop, William L.; Crowe, Thomas W. |
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Progress in submillimeter wavelength integrated mixer technology |
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Conference Article |
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1999 |
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Proc. 10th Int. Symp. Space Terahertz Technol. |
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74 |
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Charlottesville, Virginia |
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RPLAB @ s @ schottky_Tn_2970_at_0p69THz |
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290 |
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Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. |
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Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ |
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Journal Article |
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Year |
1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3216-3219 |
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RSFQ, NbN, SIS |
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A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches). |
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1081 |
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Kawamura, J. H.; Tong, C.-Y.E.; Blundell, R.; Cosmo Papa, D.; Hunter, T. R.; Gol'tsman, G.; Cherednichenko, S.; Voronov, B.; Gershenzon, E. |
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An 800 GHz NbN phonon-cooled hot-electron bolometer mixer receiver |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3753-3756 |
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NbN HEB mixers |
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We describe a heterodyne receiver developed for astronomical applications to operate in the 350 /spl mu/m atmospheric window. The waveguide receiver employs a superconductive NbN phonon-cooled hot-electron bolometer mixer. The double sideband receiver noise temperature closely follows 1 kGHz/sup -1/ across 780-870 GHz, with the intermediate frequency centered at 1.4 GHz. The conversion loss is about 15 dB. The receiver was installed for operation at the University of Arizona/Max Planck Institute for Radio Astronomy Submillimeter Telescope facility. The instrument was successfully used to conduct test observations of a number of celestial sources in a number of astronomically important spectral lines. |
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1051-8223 |
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288 |
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Karpov, A.; Blondel, J.; Voss, M.; Gundlach, K. H. |
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A three photon noise SIS heterodyne receiver at submillimeter wavelength |
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Journal Article |
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Year |
1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4456-4459 |
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RPLAB @ s @ sis_Karpov_1999 |
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300 |
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