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Maslennikova, Anna; Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Kaurova, Natalia; Voronov, Boris; Gol’tsman, Gregory |
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Title |
Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling |
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2010 |
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Proc. 21th Int. Symp. Space Terahertz Technol. |
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Proc. 21th Int. Symp. Space Terahertz Technol. |
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218-219 |
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The space observatory Millimetron will be operating in the millimeter, sub-millimeter and infrared ranges using a 12-m cryogenic telescope in a single-dish mode, and as an interferometer with the space-earth and space-space baselines (the latter after the launch of the second identical space telescope). The observatory will allow performing astronomical observations with an unprecedented sensitivity (down to nJy level) in the single-dish mode, and observations with a high angular resolution in the interferometer mode. The total spectral range 20 μm – 2 cm is separated into 10 bands. HEB mixers with two cooling channels (diffusion and phonon) have been chosen to be the detectors of choice of the system covering the range from 1 THz to 6 THz as the best detectors in terahertz receivers. This type of HEB has already shown good work in the terahertz range. A gain bandwidth of 6 GHz at an LO frequency of 300 GHz and a noise temperature of 750 K at an LO frequency of 2.5 THz are the best values for HEB mixers with two cooling channels [1]. Theoretical estimations predict a bandwidth up to 12 GHz. Reaching such good result demands more systematic and thorough research. We present the results of the gain bandwidth and noise temperature measurements for superconducting hot- electron bolometer mixers with two cooling channels. These characteristics of the devices of lengths varying from 50 to 200 nm were measured for the purposes of Millimetron at frequencies of 600 GHz, 2.5 THz, and 3.8 THz. For gain bandwidth measurements we use two BWO’s operating at 600 GHz: one as the signal and the second as the LO. The noise temperature measurements were performed using a gas discharge laser as the LO and blackbodies at 77 K and 295 K as input signals. The devices studied consist of 3.5-nm-thick NbN bridges connected to thick (10 nm) high conductivity Au leads fabricated in situ. This method of fabricating devices has already proved promising by opening the diffusion cooling channel. [2] Fig. 1 shows a SEM photograph of a log-spiral antenna with an HEB at its apex. Fig. 1. Left: a SEM photograph of a log-spiral antenna with an HEB at its apex; right: a close-up of the HEB at the antenna apex. [1] S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, and G. N. Gol’tsman, NbN phonon-cooled hot-electron bolometer mixer with additional diffusion cooling, Proc. of the 20 th Int. Symp. Space. Technol., Charlottesville, Virginia, USA, April 20 – 22, 2009. 218[2] S. A. Ryabchun * , I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov and G. N. Goltsman, Fabrication and characterisation of NbN HEB mixers with in situ gold contacts, Proc. of the 19 th Int. Symp. Space. Technol., Groningen, The Netherlands, April 28-30, 2008 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1742-6588 |
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1300 |
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Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
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Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
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2020 |
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Graphene and 2dm Virt. Conf. |
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Graphene and 2DM Virt. Conf. |
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single layer graphene, SLG, CVD, plasmons, FET |
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Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. |
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Grenoble, France |
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Graphene and 2dm Virtual Conference & Expo |
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1743 |
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Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
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The sensitivity and IF bandwidth of waveguide NbN hot electron bolometer mixers on MgO buffer layers over crystalline quartz |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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65-72 |
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waveguide NbN HEB mixers |
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We have developed and characterized waveguide phonon-cooled NbN Hot Electron Bolometer (FMB) mixers fabricated from a 3-4 nm thick NbN film deposited on a 200nm thick MgO buffer layer over crystalline quartz. Double side band receiver noise temperatures of 900-1050 K at 1.035 THz, and 1300-1400 K at 1.26 THz have been measured at an intermediate frequency of 1.5 GHz. The intermediate frequency bandwidth, measured at 0.8 THz LO frequency, is 3.2 GHz at the optimal bias point for low noise receiver operation. |
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Cambridge, MA, USA |
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Harvard university |
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326 |
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Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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1998 |
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Proc. 28th European Microwave Conf. |
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Proc. 28th European Microwave Conf. |
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1 |
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294-299 |
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NbN HEB mixers |
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In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point. |
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28th European Microwave Conference |
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1580 |
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