Polyakova, M. I., Florya, I. N., Semenov, A. V., Korneev, A. A., & Goltsman, G. N. (2019). Extracting hot-spot correlation length from SNSPD tomography data. In J. Phys.: Conf. Ser. (Vol. 1410, 012166 (1 to 4)).
Abstract: We present data of quantum detector tomography for the samples specifically optimized for this problem. Using this method, we take results of hot-spot correlation length of 17 ± 2 nm.
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Polyakova, M. I., Korneev, A. A., & Semenov, A. V. (2020). Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films. In J. Phys.: Conf. Ser. (Vol. 1695, 012146 (1 to 3)).
Abstract: In this work, we present results of quantum detector tomography of superconducting single photon detector (SSPD) based on MoSi film, and compare them with previously reported data on NbN. We find that for both materials hot spot interaction length coincides with the strip width, and the dependence of single and double-spot detection efficiencies on bias current are compatible with sufficiently large hot-spot size, approaching the strip width.
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Prokhodtsov, A., An, P., Kovalyuk, V., Zubkova, E., Golikov, A., Korneev, A., et al. (2018). Optimization of on-chip photonic delay lines for telecom wavelengths. In J. Phys.: Conf. Ser. (Vol. 1124, 051052).
Abstract: In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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Prokhodtsov, A., Golikov, A., An, P., Kovalyuk, V., Goltsman, G., Arakelyan, S., et al. (2019). Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency. In EPJ Web Conf. (Vol. 220, 02009).
Abstract: The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform.
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Prokhodtsov, A., Kovalyuk, V., An, P., Golikov, A., Shakhovoy, R., Sharoglazova, V., et al. (2020). Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation. In J. Phys.: Conf. Ser. (Vol. 1695, 012118).
Abstract: In this work, we experimentally studied silicon nitride Mach-Zehnder interferometer (MZI) with two directional couplers and 400 ps optical delay line for telecom wavelength 1550 nm. We achieved the extinction ratio in a range of 0.76-13.86 dB and system coupling losses of 28-44 dB, depending on the parameters of directional couplers. The developed interferometer is promising for the use in a compact random number generator for the needs of a fully integrated quantum cryptography system, where compact design, as well as high generation speed, are needed.
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