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Author  |
Van Rudd, J.; Johnson, Jon L.; Mittleman, Daniel M. |
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Title |
Cross-polarized angular emission patterns from lens-coupled terahertz antennas |
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Journal Article |
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Year |
2001 |
Publication |
J. Opt. Soc. Am. B |
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18 |
Issue |
10 |
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1524 |
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0740-3224 |
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475 |
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Author |
van de Stadt, H. |
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Title |
An improved 1 THz waveguide mixer |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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536 |
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Charlottesville, Virginia, USA |
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Probably other authors exist. |
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no |
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263 |
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Author |
Vaks, V. L.; Kurin, V. V.; Pankratov, A. L.; Koshelets, V. P. |
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Title |
Investigation of spectral properties of phase-focked flux flow oscillator |
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Abstract |
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Year |
2005 |
Publication |
ISEC |
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Pages |
PD-04 |
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Keywords |
SIR, FFO |
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Netherlands |
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522 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
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Title |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
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Journal Article |
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Year |
2003 |
Publication |
J. of communications technol. & electronics |
Abbreviated Journal |
J. of communications technol. & electronics |
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48 |
Issue |
6 |
Pages |
671-675 |
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Keywords |
NbN HEB mixers |
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Abstract |
Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Author |
Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N. |
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Title |
Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si |
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Conference Article |
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Year |
2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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Pages |
259-270 |
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Keywords |
NbN HEB mixers, conversion gain bandwidth |
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Abstract |
We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate. |
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Cambridge, MA, USA |
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Harvard university |
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325 |
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