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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time 1996 Phys. Rev. B Condens. Matter. 10.1103/physrevb.53.r7592 details   doi
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K 1996 JETP Lett. 10.1134/1.567211 details   doi
Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K. Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies 1996 Proc. 7th Int. Symp. Space Terahertz Technol. details   url
Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate 1996 Proc. 7th Int. Symp. Space Terahertz Technol. details   url
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