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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
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2013 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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103 |
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18 |
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181121 (1 to 5) |
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Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
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Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
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Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
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Abstract |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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71 |
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carbon nanotubes, CNT |
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This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. |
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1361 |
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Feldman, M. J.; Rudner, S. |
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Mixing with SIS arrays |
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1983 |
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Reviews of Infrared and Millimeter-Waves |
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1 |
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47 |
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232 |
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Feofanov, A. K.; Oboznov, V. A.; Bol'Ginov, V. V.; Lisenfeld, J.; Poletto, S.; Ryazanov, V. V.; Rossolenko, A. N.; Khabipov, M.; Balashov, D.; Zorin, A. B.; Dmitriev, P. N.; Koshelets, V. P.; Ustinov, A. V. |
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Implementation of superconductor/ferromagnet/ superconductor |
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2010 |
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Nature Physics |
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Nat. Phys. |
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6 |
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8 |
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593-597 |
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fromIPMRAS |
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High operation speed and low energy consumption may allow the superconducting digital single-flux-quantum circuits to outperform traditional complementary metal-oxide-semiconductor logic. The remaining major obstacle towards high element densities on-chip is a relatively large cell size necessary to hold a magnetic flux quantum Φ0. Inserting a π-type Josephson junction in the cell is equivalent to applying flux Φ0/2 and thus makes it possible to solve this problem. Moreover, using π-junctions in superconducting qubits may help to protect them from noise. Here we demonstrate the operation of three superconducting circuits-two of them are classical and one quantum-that all utilize such π-phase shifters realized using superconductor/ferromagnet/superconductor sandwich technology. The classical circuits are based on single-flux-quantum cells, which are shown to be scalable and compatible with conventional niobium-based superconducting electronics. The quantum circuit is a π-biased phase qubit, for which we observe coherent Rabi oscillations. We find no degradation of the measured coherence time compared to that of a reference qubit without a π-junction. |
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RPLAB @ gujma @ |
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805 |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace (eds) |
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Everything: Rocks and Minerals |
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2011 |
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Nat. Geogr. Partners |
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1-64 |
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children |
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Feresten, Nancy Laties; Thornton, Jennifer A.; Emmett, Jennifer; Lamichhane, Priyanka; Epstein, Lori; Kiesow, Annette; Olesin, Kate; Hill, Grace |
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