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Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films |
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Conference Article |
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Year |
1994 |
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Proc. SPIE |
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Proc. SPIE |
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2160 |
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74-82 |
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YBCO HTS switches |
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We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO2 and NdGaO3 substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. |
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SPIE |
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Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W. |
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Superconductive Devices and Circuits |
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1638 |
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Author ![sorted by Author field, ascending order (up)](img/sort_asc.gif) |
Karasik, B.S.; Lindgren, M.; Zorin, M.A.; Danerud, M.; Winkler, D.; Trifonov, V.V.; Gol’tsman, G.N.; Gershenzon, E.M. |
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Title |
Picosecond detection and broadband mixing of near-infrared radiation by YBaCuO films |
Type |
Conference Article |
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Year |
1994 |
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Proc. SPIE |
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Proc. SPIE |
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2159 |
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68-76 |
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YBCO HTS HEB mixer |
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Nonequilibrium picosecond and bolometric responses of YBCO films 500 angstroms thick patterned into 20 X 20 micrometers 2 size structure to 17 ps laser pulses and modulated radiation of GaAs and CO2 lasers have been studied. The modulation frequencies up to 10 GHz for GaAs laser and up to 1 GHz for CO2 were attained. The use of small radiation power (1 – 10 mW/cm2 for cw radiation and 10 – 100 nJ/cm2 for pulse radiation) in combination with high sensitive read-out system made possible to avoid any non-linear transient processes caused by an overheating of sample above a critical temperature or S-N switching enhanced by an intense radiation. Responses due to the change of kinetic inductance were believed to be negligible. The only signals observed were caused by a small change of the film resistance either in the resistive state created by a bias current or in the normal state. The data obtained by means of pulse and modulation techniques are in agreement. The responsivity about 1 V/W was measured at 1 GHz modulation frequency both for 0.85 micrometers and 10.6 micrometers wavelengths. The sensitivity of high-Tc fast wideband infrared detector is discussed. |
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Spie |
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Nahum, M.; Villegier, J.-C. |
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High-Temperature Superconducting Detectors: Bolometric and Nonbolometric |
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1640 |
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Author ![sorted by Author field, ascending order (up)](img/sort_asc.gif) |
Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Subnanosecond S-N and N-S switching of YBCO film induced by current pulse |
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Journal Article |
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Year |
1994 |
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Phys. C: Supercond. |
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Phys. C: Supercond. |
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235-240 |
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1981-1982 |
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YBCO HTS switches |
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A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made. |
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0921-4534 |
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1633 |
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Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
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Title |
Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
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Journal Article |
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Year |
2015 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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25 |
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3 |
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1-4 |
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TiN MKID |
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We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. |
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1051-8223 |
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1296 |
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Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
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Title |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
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Journal Article |
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Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
103 |
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25 |
Pages |
252602 (1 to 4) |
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Keywords |
disordered TiN films, electron-phonon relaxation time |
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We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.
The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
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RPLAB @ kovalyuk @ |
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941 |
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