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Freer, Erik M.; Grachev, Oleg; Duan, Xiangfeng; Martin, Samuel; Stumbo, David P. |
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High-yield self-limiting single-nanowire assembly with dielectrophoresis |
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2010 |
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Nature Nanotechnology |
Abbreviated Journal |
Nat. Nanotech. |
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5 |
Issue |
7 |
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525–530 |
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Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly. |
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SSPD |
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RPLAB @ gujma @ |
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683 |
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Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
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Title |
Terahertz detection in single wall carbon nanotubes |
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Journal Article |
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2008 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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92 |
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3 |
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033105 |
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HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
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It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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566 |
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Fuchs, G. D.; Burkard, G.; Klimov, P. V.; Awschalom, D. D. |
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A quantum memory intrinsic to single nitrogen–vacancy centres in diamond |
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Journal Article |
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2011 |
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Nature Physics |
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Nat. Phys. |
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7 |
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10 |
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789-793 |
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fromIPMRAS |
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A quantum memory, composed of a long-lived qubit coupled to each processing qubit, is important to building a scalable platform for quantum information science. These two qubits should be connected by a fast and high-fidelity operation to store and retrieve coherent quantum states. Here, we demonstrate a room-temperature quantum memory based on the spin of the nitrogen nucleus intrinsic to each nitrogen–vacancy (NV) centre in diamond. We perform coherent storage of a single NV centre electronic spin in a single nitrogen nuclear spin using Landau–Zener transitions across a hyperfine-mediated avoided level crossing. By working outside the asymptotic regime, we demonstrate coherent state transfer in as little as 120 ns with total storage fidelity of 88±6%. This work demonstrates the use of a quantum memory that is compatible with scaling as the nitrogen nucleus is deterministically present in each NV centre defect. |
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RPLAB @ gujma @ |
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823 |
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Gabay, Marc; Triscone, Jean-Marc |
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Title |
Superconductors: Terahertz superconducting switch |
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2011 |
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Nature Photonics |
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Nat. Photon. |
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5 |
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8 |
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447-449 |
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fromIPMRAS |
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The use of terahertz pulses to 'gate' interlayer charge transport in a superconductor could lead to a variety of new and interesting applications. |
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RPLAB @ gujma @ |
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777 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
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Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
Issue |
15 |
Pages |
3 |
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SSPD |
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We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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