Crockett, N. R., Bergin, E. A., Wang, S., Lis, D. C., Bell, T. A., Blake, G. A., et al. (2010). Herschel observations of EXtra-Ordinary Sources (HEXOS): The Terahertz spectrum of Orion KL seen at high spectral resolution. Annual Rev. Astron. Astrophys., 521, L21 (1 to 5).
Abstract: We present the first high spectral resolution observations of Orion KL in the frequency ranges 1573.4–1702.8 GHz (band 6b) and 1788.4–1906.8 GHz (band 7b) obtained using the HIFI instrument on board the Herschel Space Observatory. We characterize the main emission lines found in the spectrum, which primarily arise from a range of components associated with Orion KL including the hot core, but also see widespread emission from components associated with molecular outflows traced by H2O, SO2, and OH. We find that the density of observed emission lines is significantly diminished in these bands compared to lower frequency Herschel/HIFI bands.
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Cherednichenko, S., Drakinskiy, V., Berg, T., Kollberg, E. L., & Angelov, I. (2007). The direct detection effect in the hot-electron bolometer mixer sensitivity calibration. IEEE Trans. Microw. Theory Techn., 55(3), 504–510.
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Cherednichenko, S., Drakinskiy, V., Berg, T., Khosropanah, P., & Kollberg, E. (2008). Hot-electron bolometer terahertz mixers for the Herschel Space Observatory. Rev. Sci. Instrum., 79, 034501.
Abstract: We report on low noise terahertz mixers(1.4–1.9THz) developed for the heterodyne spectrometer onboard the Herschel Space Observatory. The mixers employ double slot antenna integrated superconducting hot-electron bolometers (HEBs) made of thin NbN films. The mixer performance was characterized in terms of detection sensitivity across the entire rf band by using a Fourier transform spectrometer (from 0.5to2.5THz, with 30GHz resolution) and also by measuring the mixernoise temperature at a limited number of discrete frequencies. The lowest mixernoise temperature recorded was 750K [double sideband (DSB)] at 1.6THz and 950KDSB at 1.9THz local oscillator (LO) frequencies. Averaged across the intermediate frequency band of 2.4–4.8GHz, the mixernoise temperature was 1100KDSB at 1.6THz and 1450KDSB at 1.9THz LO frequencies. The HEB heterodyne receiver stability has been analyzed and compared to the HEB stability in the direct detection mode. The optimal local oscillator power was determined and found to be in a 200–500nW range.
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Cherednichenko, S., Yagoubov, P., Il'In, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 245–257).
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Cherednichenko, S., Yagoubov, P., Il'in, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers. In Proc. 27th Eur. Microwave Conf. (Vol. 2, pp. 972–977). IEEE.
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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