Author |
Title |
Year |
Publication |
Volume |
Pages |
Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. |
Dielectric characteristics of ore minerals in a 10–40 GHz frequency range |
2008 |
Tech. Phys. Lett. |
34 |
967-970 |
Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
Optimization of on-chip photonic delay lines for telecom wavelengths |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051052 |
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
2019 |
EPJ Web Conf. |
220 |
02009 |
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
2020 |
J. Phys.: Conf. Ser. |
1695 |
012118 |
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |