Records |
Author |
Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
High speed hot-electron superconducting bolometer |
Type |
Conference Article |
Year |
1993 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
2104 |
Issue |
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Pages |
181-182 |
Keywords |
NbN HEb, Nb, Al |
Abstract |
Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q. |
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SPIE |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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1652 |
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Author |
Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M. |
Title |
Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states |
Type |
Conference Article |
Year |
1994 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
Volume |
2159 |
Issue |
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Pages |
81-86 |
Keywords |
YBCO HTS HEB, nonbolornetric |
Abstract |
The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions. |
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SPIE |
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Editor |
Nahum, M.; Villegier, J.-C. |
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High-Temperature Superconducting Detectors: Bolometric and Nonbolometric |
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1641 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
79 |
Issue |
6 |
Pages |
705-707 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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Serial |
1543 |
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Author |
Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M. |
Title |
Electron-phonon interaction in thin YBaCuO films and fast detectors |
Type |
Conference Article |
Year |
1993 |
Publication |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Abbreviated Journal |
Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences |
Volume |
112 |
Issue |
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Pages |
184-185 |
Keywords |
YBCO HTS detectors |
Abstract |
The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector. |
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Meissner, M.; Pohl, R. O. |
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Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992 |
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Serial |
1662 |
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Author |
Gol’tsman, G. N.; Smirnov, K. V. |
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
Type |
Journal Article |
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
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0021-3640 |
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По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
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Call Number |
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Serial |
1541 |
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