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Author (up) Anosov, A. A.; Barabanenkov, Yu. N.; Kazanskii, A. S.; Less, Yu. A.; Sharakshane, A. S. doi  openurl
  Title The inverse problem of acoustothermography with correlation reception of thermal acoustic radiation Type Journal Article
  Year 2009 Publication Acoust. Phys. Abbreviated Journal  
  Volume 55 Issue 1 Pages 114-119  
  Keywords acoustic thermography, acoustothermography  
  Abstract For the one-dimensional inverse problem of acoustothermography with correlation reception of thermal acoustic radiation, an integral equation is presented and experimentally verified. A method of solving the inverse problem is proposed. The method is based on combining the correlation functions of thermal acoustic radiation that were obtained for different distances between the receivers.  
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  Notes Approved no  
  Call Number Serial 1131  
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Author (up) Anosov, A. A.; Nemchenko, O. Yu.; Less, Yu. A.; Kazanskii, A. S.; Mansfel'd, A. D. doi  openurl
  Title Possibilities of acoustic thermometry for controlling targeted drug delivery Type Journal Article
  Year 2015 Publication Acoust. Phys. Abbreviated Journal  
  Volume 61 Issue 4 Pages 488-493  
  Keywords acoustic thermometry, liposome suspension, thermography  
  Abstract Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature.  
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  Notes Approved no  
  Call Number Serial 1130  
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Author (up) Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. url  openurl
  Title Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz Type Journal Article
  Year 2001 Publication Physics of Vibrations Abbreviated Journal Physics of Vibrations  
  Volume 9 Issue 4 Pages 242-245  
  Keywords NbN HEB mixers  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1069-1227 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1550  
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Author (up) Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G. url  doi
openurl 
  Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
  Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.  
  Volume 32 Issue 7 Pages 075003  
  Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate  
  Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.  
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  Publisher IOP Publishing Place of Publication Editor  
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  Notes Approved no  
  Call Number Antipov_2019 Serial 1277  
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Author (up) Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. url  doi
openurl 
  Title Superconductivity in highly disordered NbN nanowires Type Journal Article
  Year 2016 Publication Nanotechnol. Abbreviated Journal Nanotechnol.  
  Volume 27 Issue 47 Pages 47lt02 (1 to 8)  
  Keywords NbN nanowires  
  Abstract The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.  
  Address National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia  
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  Language English Summary Language Original Title  
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  Series Volume Series Issue Edition  
  ISSN 0957-4484 ISBN Medium  
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  Notes PMID:27782000 Approved no  
  Call Number Serial 1332  
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