Records |
Author |
Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G. |
Title |
Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer |
Type |
Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
13 |
Issue |
2 |
Pages |
164-167 |
Keywords |
NbN HEB mixer |
Abstract |
In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions. |
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341 |
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Author |
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
Title |
On chip carbon nanotube tunneling spectroscopy |
Type |
Journal Article |
Year |
2020 |
Publication |
Fullerenes, Nanotubes and Carbon Nanostructures |
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Volume |
28 |
Issue |
1 |
Pages |
50-53 |
Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM |
Abstract |
We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. |
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Taylor & Francis |
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doi:10.1080/1536383X.2019.1671365 |
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1269 |
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Author |
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
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CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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1781 |
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Author |
Maslennikova, A.; Larionov, P.; Ryabchun, S.; Smirnov, A.; Pentin, I.; Vakhtomin, Yu.; Smirnov, K.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Title |
Noise equivalent power and dynamic range of NBN hot-electron bolometers |
Type |
Conference Article |
Year |
2011 |
Publication |
Proc. MLPLIT |
Abbreviated Journal |
Proc. MLPLIT |
Volume |
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Issue |
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Pages |
146-148 |
Keywords |
NbN HEB |
Abstract |
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Address |
Suzdal / Vladimir (Russia) |
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Publisher |
Modern laser physics and laser-information technologies for science and manufacture |
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1st international russian-chinese conference / youthschool-workshop |
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September 23-28, 2011 |
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Serial |
1386 |
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Author |
Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. |
Title |
NbN HEB mixers for frequencies of 2.5 and 3.8 THz |
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Conference Article |
Year |
2004 |
Publication |
Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) |
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Moscow |
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no |
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RPLAB @ s @ qoheb_vnksf10_2004 |
Serial |
349 |
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Author |
Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G. |
Title |
NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz |
Type |
Conference Article |
Year |
2002 |
Publication |
Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE |
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Publisher |
LETI |
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St.-Petersburg |
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no |
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Serial |
324 |
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Author |
Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
Title |
Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
177-179 |
Keywords |
directly coupled NbN HEB mixers |
Abstract |
We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. |
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Paris, France |
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no |
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Serial |
386 |
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Author |
Marsili, F.; Bitauld, D.; Fiore, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Goltsman, G. |
Title |
Superconducting parallel nanowire detector with photon number resolving functionality |
Type |
Journal Article |
Year |
2009 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
Volume |
56 |
Issue |
2-3 |
Pages |
334-344 |
Keywords |
PNR; SSPD; SNSPD; thin superconducting films; photon number resolving detector; multiplication noise; telecom wavelength; NbN |
Abstract |
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise. |
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0950-0340 |
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no |
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RPLAB @ gujma @ |
Serial |
701 |
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Author |
Marsili, F.; Bitauld, D.; Divochiy, A.; Gaggero, A.; Leoni, R.; Mattioli, F.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.; Lagoudakis, K.G.; Benkahoul, M.; Lévy, F.; Fiore, A. |
Title |
Superconducting nanowire photon number resolving detector at telecom wavelength |
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Conference Article |
Year |
2008 |
Publication |
CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
Volume |
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Issue |
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Pages |
Qmj1 (1 to 2) |
Keywords |
PNR SSPD; SNSPD; Detectors; Infrared; Low light level; Diode lasers; Photons; Scanning electron microscopy; Superconductors; Ti:sapphire lasers |
Abstract |
We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches. |
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Optical Society of America |
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978-1-55752-859-9 |
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no |
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Marsili:08 |
Serial |
1243 |
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Author |
Loudkov, D.; Tong, C.-Y.E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol’tsman, G. |
Title |
An investigation of the performance of the waveguide superconducting HEB mixer at different RF embedding impedances |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 16th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
226-229 |
Keywords |
waveguide NbN HEB mixers |
Abstract |
We have conducted an investigation of the performance of superconducting hot-electron bolometric (HEB) mixer at 800 GHz as a function of the embedding impedance of the waveguide embedding circuit. Using a single half-height mixer block, we have developed three different mixer chip configurations, offering nominal embedding resistances of 70, 35, and 15 Ohms. Both the High Frequency Structure Simulator (HFSS) software and scaled model impedance measurements were employed in the design process. Two batches of HEB mixers were fabricated to these designs using 3-4 nm thick NbN thin film. The mixers were characterized through receiver noise temperature measurements and Fourier Transform Spectrometer (FTS) scans. Briefly, a minimum receiver noise temperature of 440 K was measured at a local oscillator frequency 850 GHz for a mixer of normal state resistance 62 Ohms incorporated into a circuit offering a nominal embedding impedance of 70 Ohms. We conclude from our data that, for low noise operation, the normal state resistance of the HEB mixer element should be close to that of the embedding impedance of the mixer mount. |
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1472 |
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