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Grotz, Bernhard; Hauf, Moritz V.; Dankerl, Markus; Naydenov, Boris; Pezzagna, Sébastien; Meijer, Jan; Jelezko, Fedor; Wrachtrup, Jörg; Stutzmann, Martin; Reinhard, Friedemann; Garrido, Jose A. |
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Charge state manipulation of qubits in diamond |
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Journal Article |
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2012 |
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Nature Communications |
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Nat. Comm. |
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3 |
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729 |
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6 |
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fromIPMRAS |
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The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+. |
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RPLAB @ gujma @ |
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770 |
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Gundlach, K. H.; Schicke, M. |
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SIS and bolometer mixers for terahertz frequencies |
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Journal Article |
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2000 |
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Supercond. Sci. Technol |
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13 |
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181-187 |
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RPLAB @ s @ sis_Gundlach_2000 |
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302 |
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Gupta, D.; Kadin, A. M. |
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Single-photon-counting hotspot detector with integrated RSFQ readout electronics |
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Journal Article |
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1999 |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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4487-4490 |
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RSFQ, SSPD, SNSPD |
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Absorption of an infrared photon in an ultrathin film (such as 10-nm NbN) creates a localized nonequilibrium hotspot on the submicron length scale and sub-ns time scale. If a strip /spl sim/1 /spl mu/m wide is biased in the middle of the superconducting transition, this hotspot will lead to a resistance pulse with amplitude proportional to the energy of the incident photon. This resistance pulse, in turn, can be converted to a current pulse and inductively coupled to a SQUID amplifier with a digitized output, operating at 4 K or above. A preliminary design analysis indicates that this data can be processed on-chip, using ultrafast RSFQ digital circuits, to obtain a sensitive infrared detector for wavelengths up to 10 /spl mu/m and beyond, with bandwidth of 1 GHz, that counts individual photons and measures their energy with 25 meV resolution. This proposed device combines the speed of a hot-electron bolometer with the single-photon-counting ability of a transition-edge microcalorimeter, to obtain an infrared detector with sensitivity, speed, and spectral selectivity that are unmatched by any alternative technology. |
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1080 |
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Gurevich, A. Vl.; Mints, R. G. |
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Self-heating in normal metals and superconductors |
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1987 |
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Rev. Mod. Phys. |
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59 |
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4 |
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941-1000 |
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HEB, Joule self-heating effect |
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This review is devoted to the physics of current-carrying superconductors and normal metals having two or more stable states sustained by Joule self-heating. The creation, propagation, and localization of electrothermal domains and switching waves leading to the transition from one stable state to another in uniform and nonuniform samples are treated in detail. The connection between thermal bistability and hysteresis, dropping and stepped current-voltage characteristics, self-induced oscillations of current and voltage, selfreplication of electrothermal domains, and the formation of periodic and stochastic resistive structures are considered. |
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917 |
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Gurovich, B. A.; Tarkhov, M. A.; Prikhod'ko, K. E.; Kuleshova, E. A.; Komarov, D. A.; Stolyarov, V. L.; Olshanskii, E. D.; Goncharov, B. V.; Goncharova, D. A.; Kutuzov, L. V.; Domantovskii, A. G. |
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Controlled modification of superconducting properties of NbN ultrathin films under composite ion beam irradiation |
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Journal Article |
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2014 |
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Nanotechnologies in Russia |
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Nanotechnologies in Russia |
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9 |
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7 |
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386-390 |
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superconducting NbN films composite ion beam irradiation protoning |
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In this work, the results of studying the microstructure and superconducting properties of ultrathin films on the basis of NbN in the initial state and after modification by being subjecting to composite ion beam irradiation with the energy ~1–3) keV are presented. HRTEM analysis showed that the initial films on the sapphire substrate in orientation “c-cut†are characterized by a grain size essentially exceeding the film thickness, while on the other substrates the size of grains corresponds to the thickness of film. Using XPS analysis, it was shown that in the initial films the atomic ratio of Nb and N is 0.51/0.49, respectively, the percentage of oxygen being lower than 5%. For ultrathin films 5 nm in thickness, the critical temperature of transit to superconducting state (T c) is found to be ~3.6 K and the density of critical current is jc ~8MA/cm2. In the work it is experimentally determined that the irradiation of NbN films by composite ion beams leads to the controlled modification of its superconducting properties due to the process of selective substitution of nitrogen atoms on the oxygen atoms. |
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1000 |
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