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Author (down) Gol'tsman, B. M.; Kutasov, V. A.; Luk'yanova, L. N.
Title Mechanism of formation of texture and its influence on the strength of thermoelectric p-Bi0.5Sb1.5Te3 Type Journal Article
Year 2009 Publication Physics of the Solid State Abbreviated Journal Phys. Sol. St.
Volume 51 Issue 4 Pages 747-749
Keywords
Abstract It is established that, in preparing p-Bi0.5Sb1.5Te3 by vertical zone melting, in addition to the directional texture (characteristic of materials exhibiting a highly anisotropic growth rate) in which the cleavage planes of crystal grains are parallel to the direction of propagation of the crystallization front, other texture types can arise, in which the orientation of grain cleavage planes is ordered in a cross-sectional plane of the ingot. Two types of such textures, “radial” and “circular,” were observed. In a radial texture, the lines of intersection of grain cleavage planes with a cross-sectional plane of the ingot are oriented along radii of this cross section and, in a circular texture, these lines of intersection are oriented approximately perpendicular to a radius crossing the grain. The formation of a radial texture is associated with rotation of the ampoule with the crystallizing substance about its vertical axis causing centrifugal flows of the melt. The formation of a circular texture is associated with the orientation effect of the ampoule walls and with circular motion of the melt during torsional oscillations of the ampoule about the vertical axis. Ingots with a radial texture exhibit much lower resistance to splitting along their axis than ingots with a circular texture do. An explanation is provided for this fact.
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Call Number RPLAB @ gujma @ Serial 726
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Author (down) Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G.
Title Counting photons using a nanonetwork of superconducting wires Type Conference Article
Year 2009 Publication Nano-Net Abbreviated Journal
Volume Issue Pages 120-122
Keywords SSPD, SNSPD
Abstract We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.
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Publisher Springer Berlin Heidelberg Place of Publication Berlin, Heidelberg Editor Cheng, M.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 978-3-642-02427-6 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number 10.1007/978-3-642-02427-6_20 Serial 1242
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Author (down) Esteban, Eduin; Serna, Hernandez
Title Quantum key distribution protocol with private-public key Type Journal Article
Year 2009 Publication arXiv Abbreviated Journal arXiv
Volume Issue Pages 3
Keywords quantum cryptography; QKD; protocol
Abstract A quantum cryptographic protocol based in public key cryptography combinations and private key cryptography is presented. Unlike the BB84 protocol 1 and its many variants 2,3 two quantum channels are used. The present research does not make reconciliation mechanisms of information to derive the key. A three related system of key distribution are described.
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Notes arXiv: 0908.2146 Approved no
Call Number RPLAB @ gujma @ Serial 756
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Author (down) Driessen, Eduard Frans Clemens
Title Coupling light to periodic nanostructures Type Journal Article
Year 2009 Publication Faculty of Science, Leiden University Abbreviated Journal Fac. Scien., Leiden Un.
Volume Issue Pages 144
Keywords SSPD
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Notes Issue Date: 2009-09-24 Approved no
Call Number RPLAB @ gujma @ Serial 675
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Author (down) Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A.
Title Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors Type Journal Article
Year 2009 Publication Eur. Phys. J. Appl. Phys. Abbreviated Journal
Volume 47 Issue Pages 10701
Keywords SSPD, SNSPD
Abstract We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity.
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Language English Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ alex_kazakov @ Serial 1062
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Author (down) Doi, Y.; Wang, Z.; Ueda, T.; Nickels, P.; Komiyama, S.; Patrashin, M.; Hosako, I.; Matsuura, S.; Shirahata, M.; Sawayama, Y.; Kawada, M.
Title CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument Type Journal Article
Year 2009 Publication SPICA Abbreviated Journal SPICA
Volume Issue SPICA Workshop 2009 Pages
Keywords detectors; Infrared
Abstract We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 672
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Author (down) Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl
Title Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors Type Journal Article
Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.
Volume 56 Issue 2 Pages 364-373
Keywords PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency
Abstract A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented.
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Call Number RPLAB @ gujma @ Serial 700
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Author (down) Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X.
Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 19 Pages 3
Keywords 2DEG
Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 673
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Author (down) Billade, Bhushan; Belitsky, Victor; Pavolotsky, Alexey; Lapkin, Igor; Kooi, Jacob
Title ALMA band 5 (163-211 GHz) sideband separation mixer Type Conference Article
Year 2009 Publication Proc. 20th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 19-23
Keywords SIS mixer, noise temperature, ALMA, band 5
Abstract We present the design of ALMA Band 5 sideband separation SIS mixer and experimental results for the double side band mixer and first measurement results 2SB mixer. In this mixer, the LO injection circuitry is integrated on the mixer substrate using a directional coupler, combining microstrip lines with slot-line branches in the ground plane. The isolated port of the LO coupler is terminated by wideband floating elliptical termination. The mixer employs two SIS junctions with junction area of 3 µm² each, in the twin junction configuration, followed by a quarter wave transformer to match the RF probe. 2SB mixer uses two identical but mirrored chips, whereas each DSB mixer has the same end-piece configuration. The 2S mixer has modular design such that DSB mixers are measured independently and then integrated into 2SB simply by placing around the middle piece. Measurements of the DSB mixer show noise temperature of around 40K over the entire band. 2SB mixer is not fully characterized yet, however, preliminary measurement indicates SSB (un-corrected) noise temperature of 80K.
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Notes Approved no
Call Number Serial 616
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Author (down) Bharadwaj, Palash; Deutsch, Bradley; Novotny, Lukas
Title Optical Antennas Type Journal Article
Year 2009 Publication Advances in Optics and Photonics Abbreviated Journal Adv. Opt. Photon
Volume 1 Issue Pages 438-483
Keywords optical antennas
Abstract Optical antennas are an emerging concept in physical optics. Similar to radiowave

and microwave antennas, their purpose is to convert the energy of free propagating radiation to localized energy, and vice versa. Optical antennas exploit the unique properties of metal nanostructures, which behave as strongly coupled plasmas at ptical frequencies. The tutorial provides an account of the historical origins and the basic concepts and parameters associated with optical antennas. It also reviews recent work in the field and discusses areas of application, such as light-emitting devices, photovoltaics, and spectroscopy.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 754
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