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Author  |
Gol'tsman, B. M.; Kutasov, V. A.; Luk'yanova, L. N. |
| Title |
Mechanism of formation of texture and its influence on the strength of thermoelectric p-Bi0.5Sb1.5Te3 |
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Journal Article |
| Year |
2009 |
Publication |
Physics of the Solid State |
Abbreviated Journal |
Phys. Sol. St. |
| Volume |
51 |
Issue |
4 |
Pages |
747-749 |
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| Abstract |
It is established that, in preparing p-Bi0.5Sb1.5Te3 by vertical zone melting, in addition to the directional texture (characteristic of materials exhibiting a highly anisotropic growth rate) in which the cleavage planes of crystal grains are parallel to the direction of propagation of the crystallization front, other texture types can arise, in which the orientation of grain cleavage planes is ordered in a cross-sectional plane of the ingot. Two types of such textures, “radial†and “circular,†were observed. In a radial texture, the lines of intersection of grain cleavage planes with a cross-sectional plane of the ingot are oriented along radii of this cross section and, in a circular texture, these lines of intersection are oriented approximately perpendicular to a radius crossing the grain. The formation of a radial texture is associated with rotation of the ampoule with the crystallizing substance about its vertical axis causing centrifugal flows of the melt. The formation of a circular texture is associated with the orientation effect of the ampoule walls and with circular motion of the melt during torsional oscillations of the ampoule about the vertical axis. Ingots with a radial texture exhibit much lower resistance to splitting along their axis than ingots with a circular texture do. An explanation is provided for this fact. |
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RPLAB @ gujma @ |
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726 |
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Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G. |
| Title |
Counting photons using a nanonetwork of superconducting wires |
Type |
Conference Article |
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2009 |
Publication |
Nano-Net |
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120-122 |
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SSPD, SNSPD |
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We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths. |
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Springer Berlin Heidelberg |
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Berlin, Heidelberg |
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Cheng, M. |
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978-3-642-02427-6 |
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10.1007/978-3-642-02427-6_20 |
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1242 |
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| Author |
Esteban, Eduin; Serna, Hernandez |
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Quantum key distribution protocol with private-public key |
Type |
Journal Article |
| Year |
2009 |
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arXiv |
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arXiv |
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3 |
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quantum cryptography; QKD; protocol |
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A quantum cryptographic protocol based in public key cryptography combinations and private key cryptography is presented. Unlike the BB84 protocol 1 and its many variants 2,3 two quantum channels are used. The present research does not make reconciliation mechanisms of information to derive the key. A three related system of key distribution are described. |
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arXiv: 0908.2146 |
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RPLAB @ gujma @ |
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756 |
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Driessen, Eduard Frans Clemens |
| Title |
Coupling light to periodic nanostructures |
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Journal Article |
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2009 |
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Faculty of Science, Leiden University |
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Fac. Scien., Leiden Un. |
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144 |
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SSPD |
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Issue Date: 2009-09-24 |
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RPLAB @ gujma @ |
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675 |
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Driessen, E. F. C.; Braakman, F. R.; Reiger, E. M.; Dorenbos, S. N.; Zwiller, V.; de Dood, M. J. A. |
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Impedance model for the polarization-dependent optical absorption of superconducting single-photon detectors |
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Journal Article |
| Year |
2009 |
Publication |
Eur. Phys. J. Appl. Phys. |
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47 |
Issue |
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Pages |
10701 |
| Keywords |
SSPD, SNSPD |
| Abstract |
We measured the single-photon detection efficiency of NbN superconducting single-photon detectors as a function of the polarization state of the incident light for different wavelengths in the range from 488 nm to 1550 nm. The polarization contrast varies from ~% at 488 nm to~0% at 1550 nm, in good agreement with numerical calculations. We use an optical-impedance model to describe the absorption for polarization parallel to the wires of the detector. For the extremely lossy NbN material, the absorption can be kept constant by keeping the product of layer thickness and filling factor constant. As a consequence, the maximum possible absorption is independent of filling factor. By illuminating the detector through the substrate, an absorption efficiency of ~0% can be reached for a detector on Si or GaAs, without the need for an optical cavity. |
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English |
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RPLAB @ alex_kazakov @ |
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1062 |
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