Elmanov, I., Elmanova, A., Kovalyuk, V., An, P., & Goltsman, G. (2020). Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds. In Proc. 32-nd EMSS (pp. 344–348).
Abstract: The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength.
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Elmanova, A., An, P., Kovalyuk, V., Golikov, A., Elmanov, I., & Goltsman, G. (2020). Study of silicon nitride O-ring resonator for gas-sensing applications. In J. Phys.: Conf. Ser. (Vol. 1695, 012124).
Abstract: In this work, we experimentally studied the influence of different gaseous surroundings on silicon nitride O-ring resonator transmission. We compared the obtained results with numerical calculations and theoretical analysis and found a good agreement between them. Our results have a great potential for gas sensing applications, where a compact footprint and high efficiency are desired simultaneously.
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Elmanova, A., Elmanov, I., Komrakova, S., Golikov, A., Javadzade, J., Vorobyev, V., et al. (2019). Integration of nanodiamonds with NV-centers on optical silicon nitride structures. In EPJ Web Conf. (Vol. 220, 03013).
Abstract: In this work we had developed optical structures from silicon nitride for further integration of the nanodiamonds containing NV-centers with them. We have introduced method of the nanodiamonds solution application on the substrates. The work has practical meaning in nanophotonics sphere and in development of optical devices with single-photon sources.
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Feautrier, P., le Coarer, E., Espiau de Lamaestre, R., Cavalier, P., Maingault, L., Villégier, J. - C., et al. (2008). High-speed superconducting single photon detectors for innovative astronomical applications. In J. Phys.: Conf. Ser. (Vol. 97, 10).
Abstract: Superconducting Single Photon Detectors (SSPD) are now mature enough to provide extremely interesting detector performances in term of sensitivity, speed, and geometry in the visible and near infrared wavelengths. Taking advantage of recent results obtained in the Sinphonia project, the goal of our research is to demonstrate the feasibility of a new family of micro-spectrometers, called SWIFTS (Stationary Wave Integrated Fourier Transform Spectrometer), associated to an array of SSPD, the whole assembly being integrated on a monolithic sapphire substrate coupling the detectors array to a waveguide injecting the light. This unique association will create a major breakthrough in the domain of visible and infrared spectroscopy for all applications where the space and weight of the instrument is limited. SWIFTS is an innovative way to achieve very compact spectro-detectors using nano-detectors coupled to evanescent field of dielectric integrated optics. The system is sensitive to the interferogram inside the dielectric waveguide along the propagation path. Astronomical instruments will be the first application of such SSPD spectrometers. In this paper, we describes in details the fabrication process of our SSPD built at CEA/DRFMC using ultra-thin NbN epitaxial films deposited on different orientations of Sapphire substrates having state of the art superconducting characteristics. Electron beam lithography is routinely used for patterning the devices having line widths below 200 nm and down to 70 nm. An experimental set-up has been built and used to test these SSPD devices and evaluate their photon counting performances. Photon counting performances of our devices have been demonstrated with extremely low dark counts giving excellent signal to noise ratios. The extreme compactness of this concept is interesting for space spectroscopic applications. Some new astronomical applications of such concept are proposed in this paper.
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Fedorov, G. E., Gaiduchenko, I. A., Golikov, A. D., Rybin, M. G., Obraztsova, E. D., Voronov, B. M., et al. (2015). Response of graphene based gated nanodevices exposed to THz radiation. In EPJ Web of Conferences (Vol. 103, 10003 (1 to 2)).
Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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