|   | 
Details
   web
Records
Author (down) Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N.
Title Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection Type Journal Article
Year 2016 Publication Semicond. Abbreviated Journal Semicond.
Volume 50 Issue 12 Pages 1600-1603
Keywords carbon nanotubes, CNT detectors
Abstract Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1063-7826 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1776
Permanent link to this record
 

 
Author (down) Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
Title Response of graphene based gated nanodevices exposed to THz radiation Type Conference Article
Year 2015 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences
Volume 103 Issue Pages 10003 (1 to 2)
Keywords graphene field-effect transistor, FET
Abstract In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1350
Permanent link to this record
 

 
Author (down) Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K.
Title Achieving high counting rates in superconducting nanowire single-photon detectors Type Conference Article
Year 2006 Publication CLEO/QELS Abbreviated Journal CLEO/QELS
Volume Issue Pages JTuD3 (1 to 2)
Keywords SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors
Abstract Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
Address
Corporate Author Thesis
Publisher Optical Society of America Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Notes Approved no
Call Number Serial 1451
Permanent link to this record
 

 
Author (down) Cherednichenko, S.; Khosropanah, P.; Adam, A.; Merkel, H. F.; Kollberg, E. L.; Loudkov, D.; Gol'tsman, G. N.; Voronov, B. M.; Richter, H.; Huebers, H.-W.
Title 1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 4855 Issue Pages 361-370
Keywords NbN HEB mixers
Abstract NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope.
Address
Corporate Author Thesis
Publisher SPIE Place of Publication Editor Phillips, T.G.; Zmuidzinas, J.
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference Millimeter and Submillimeter Detectors for Astronomy
Notes Approved no
Call Number Serial 1521
Permanent link to this record
 

 
Author (down) Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O.
Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type Journal Article
Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika
Volume 5 Issue 10 Pages 1950-1954
Keywords NbN films
Abstract Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0131-5366 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1675
Permanent link to this record