Records |
Author |
Floet, D. Wilms; Baselmans, J. J. A.; Klapwijk, T. M.; Gao, J. R. |
Title |
Resistive transition of niobium superconducting hot-electron bolometer mixers |
Type |
Journal Article |
Year |
1998 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
73 |
Issue |
19 |
Pages |
2826 |
Keywords |
HEB |
Abstract |
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ISSN |
0003-6951 |
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Serial |
543 |
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Author |
Fu, K.; Zannoni, R.; Chan, C.; Adams, S. H.; Nicholson, J.; Polizzi, E.; Yngvesson, K. S. |
Title |
Terahertz detection in single wall carbon nanotubes |
Type |
Journal Article |
Year |
2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
92 |
Issue |
3 |
Pages |
033105 |
Keywords |
HEB, single wall, carbon nanotube, CNT, SWNT, SWCNT, terahertz detection, THz |
Abstract |
It is reported that terahertz radiation from 0.69 to 2.54 THz has been sensitively detected in a device consisting of bundles of carbon nanotubes containing single wall metallic carbon nanotubes, quasioptically coupled through a lithographically fabricated antenna, and a silicon lens. The measured data are consistent with a bolometric detection process in the metallic tubes and the devices show promise for operation well above 4.2 K. |
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0003-6951 |
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NEP is not shown |
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no |
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Serial |
566 |
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Author |
Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. |
Title |
NbN hot electron bolometer mixers with superior performance for space applications |
Type |
Conference Article |
Year |
2004 |
Publication |
Proc. Int. workshop on low temp. electronics |
Abbreviated Journal |
Proc. Int. workshop on low temp. electronics |
Volume |
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Issue |
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Pages |
11-17 |
Keywords |
NbN HEB mixers, applications |
Abstract |
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Place of Publication |
Noordwijk |
Editor |
Armandillo, E.; Leone, B. |
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International workshop on low temperature electronics- WOLTE 6 - Noordwijk |
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no |
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Serial |
1496 |
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Author |
Gao, J. R.; Hajenius, M.; Baselmans, J. J. A.; Yang, Z. Q.; Baryshev, A. M.; Barends, R.; Klapwijk, T. M.; Voronov, B.; Gol'tsman, G.; Callaos, N. |
Title |
Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications |
Type |
Conference Article |
Year |
2005 |
Publication |
Proc. 9-th WMSCI |
Abbreviated Journal |
Proc. 9-th WMSCI |
Volume |
9 |
Issue |
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Pages |
148-153 |
Keywords |
NbN HEB mixers |
Abstract |
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Publisher |
International Institute of Informatics and Systemics |
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9806560639, 9789806560635 |
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9th World Multi-Conference on Systemics, Cybernetics and Informatics |
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no |
Call Number |
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Serial |
1480 |
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Author |
Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Voronov, B.; Grishina, E.; Klapwijk, T. M.; Gol'tsman, G.; Zorman, C. A. |
Title |
Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? |
Type |
Conference Article |
Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 17th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
187-189 |
Keywords |
NbN HEB mixers |
Abstract |
We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm). |
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1439 |
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