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	Author	Zorin, M.; Milostnaya, I.; Gol'tsman, G. N.; Gershenzon, E. M.
	Title	Fast NbN superconducting switch controlled by optical radiation			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3734-3737
	Keywords	NbN superconducting switch
	Abstract	The switching time and the optical control power of the NbN superconducting switch have been measured. The device is based on the ultrathin film 5-8 nm thick patterned as a structure of several narrow parallel strips (/spl sim/1 /spl mu/m wide) connected to wide current leads. The current-voltage characteristic of the switch at temperature 4.2 K demonstrated a hysteresis due to DC current self-heating. We studied the superconducting-to-resistive state transition induced by both optical and bias-current excitations. The optical pulse duration was /spl sim/20 ps and the rise time of the current step was determined to be less than 50 ps. The optical pulse was delivered to the switch by the semiconductor laser through an optical fiber. We found that the measured switching time is less than the duration of the optical excitation. The threshold optical power density does not exceed 3/spl middot/10/sup 3/ W/cm/sup 2/. The proposed device can be used in the fiber input of LTS rapid single flux quantum circuits.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1596
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	Author	Yngvesson, K. S.; Gerecht, E.; Musante, C. F.; Zhuang, Y.; Ji, M.; Goyette, T. M.; Dickinson, J. C.; Waldman, J.; Yagoubov, P. A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	Low-noise HEB heterodyne receivers and focal plane arrays for the THz regime using NbN			Type	Conference Article
	Year	1999	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	3795	Issue		Pages	357-368
	Keywords	NbN HEB mixers
	Abstract	We have developed prototype HEB receivers using thin film superconducting NbN devices deposited on silicon substrates. The devices are quasi-optically coupled through a silicon lens and a self-complementary log-specific toothed antenna. We measured DSB receiver noise temperatures of 500 K (13 X hf/2k) at 1.56 THz and 1,100 K (20 X hf/2k) at 2.24 THz. Noise temperatures are expected to fall further as devices and quasi-optical coupling methods are being optimized. The measured 3 dB IF conversion gain bandwidth for one device was 3 GHz, and it is estimated that the bandwidth over which the receiver noise temperature is within 3 dB of its minimum value is 6.5 GHz which is sufficient for a number of practical applications. We will discuss our latest results and give a detailed description of our prototype setup and experiments. We will also discuss our plans for developing focal plane arrays with tens of Hot Electron Bolometric mixer elements on a single silicon substrate which will make real time imaging systems in the THz region feasible.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Hwu, R.J.; Wu, K.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Terahertz and Gigahertz Photonics
	Notes				Approved	no
	Call Number				Serial	1561
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	Author	Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D.
	Title	Superconductive properties of ultrathin NbN films on different substrates			Type	Journal Article
	Year	1994	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	7	Issue	6	Pages	1097-1102
	Keywords	NbN films
	Abstract	A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0131-5366	ISBN		Medium
	Area		Expedition		Conference
	Notes	Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках			Approved	no
	Call Number				Serial	1631
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	Author	Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D.
	Title	Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	5	Pages	955-960
	Keywords	NbN HEB detectors
	Abstract	Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0131-5366	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1670
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	Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
	Title	Capture of free holes by charged acceptors in uniaxially deformed Ge			Type	Journal Article
	Year	1988	Publication	Fizika i Tekhnika Poluprovodnikov	Abbreviated Journal	Fizika i Tekhnika Poluprovodnikov
	Volume	22	Issue	3	Pages	540-543
	Keywords	Ge, free holes, capture
	Abstract	Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge			Approved	no
	Call Number				Serial	1698
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	Author	Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.
	Title	Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure			Type	Journal Article
	Year	1989	Publication	Sov. Phys. and Technics of Semiconductors	Abbreviated Journal	Sov. Phys. and Technics of Semiconductors
	Volume	23	Issue	8	Pages	843-846
	Keywords	Ge, crystallography
	Abstract	Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge			Approved	no
	Call Number				Serial	1692
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	Author	Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R.
	Title	Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions			Type	Conference Article
	Year	2002	Publication	Mater. Sci. Forum	Abbreviated Journal	Mater. Sci. Forum
	Volume	384-3	Issue		Pages	107-116
	Keywords	2DEG, AlGaAs/GaAs
	Abstract	A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Materials Science Forum
	Notes				Approved	no
	Call Number				Serial	1536
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	Author	Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures			Type	Journal Article
	Year	1995	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	61	Issue	7	Pages	591-595
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grﬁneisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a signiﬁcant discrepancy between the experimental and theoretical re-sults.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1624
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
	Title	Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K			Type	Journal Article
	Year	1996	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	64	Issue	5	Pages	404-409
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”)			Approved	no
	Call Number				Serial	1608
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	163-166
	Keywords	S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1603
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions			Type	Journal Article
	Year	1996	Publication	Surface Science	Abbreviated Journal	Surface Science
	Volume	361-362	Issue		Pages	569-573
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0039-6028	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1609
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Determination of the limiting mobility of a two-dimensional electron gas in Al_xGa_1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time			Type	Journal Article
	Year	1996	Publication	Phys. Rev. B Condens. Matter.	Abbreviated Journal	Phys. Rev. B Condens. Matter.
	Volume	53	Issue	12	Pages	R7592-R7595
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:9982274			Approved	no
	Call Number				Serial	1612
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	Author	Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsyna, N. G.; Chulkova, G. M.
	Title	AC losses and submillimeter absorption in single crystals La2CuO4			Type	Journal Article
	Year	1990	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
	Volume	165-166	Issue		Pages	1269-1270
	Keywords	metal-dielectric-La2Cu04
	Abstract	The La2CuO4 single crystals were used to carry out the measurements of transmission spectra within the submillimeter range of wavelengths, as well as the capacitance C and conductivity G in the region of acoustic frequencies of the metal-dielectric-La2Cu04 system at low temperatures. The optical spectra display a threshold character. There takes place a sharp decreasing of transmission signal in the energy range of hυ>1.5meV. The C(ω,T) and G(ω,T) dependences have a universal form characteristic of relaxation processes of the Debye type. The relaxation time dependence displays a thermoactivation character τ(T)-exp(ξ/T) with a gap value of ξ≃2meV,coinciding with the optical one. It is assumed that there exist excitations with a characteristic energy ~ 2meV in La2Cu04.A possible nature of the revealed low-energy excitations is discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1686
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	Author	Varyukhin, S. V.; Zakharov, A. A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.
	Title	Low energy excitation in La₂CuO₄			Type	Journal Article
	Year	1990	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	3	Issue	5	Pages	832-837
	Keywords	metal-dielectric-La2CuO4, monocrystals
	Abstract	Measurements of transmission and photoconductivity spectra in submillimeter wave length range as well as of capacity C and conductivity G in the region of acoustic frequencies of metal-dielectric-La2CuO4 system at low temperatures are performed using La2CuO4 monocrystals. Optical spectra posses a threshold character, a sharp decrease of transmission and photocoductivity signal occurs in the energy region hν>1.5 MeV. C(ω,T) and G(ω, T) dependences have a universal form typical of Debye type relaxation processes. Relaxation time dependence is of thermoactivated character τ(T)∼exp(ξ/T) with the gap value ξ≅2 meV. It is assumed that excitations with characteristic energy of ∼2 meV exist in La2CuO4. A possible nature of the detected low-energy excitations is discussed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1688
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	Author	Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
	Title	9.6 μm wavelength mixing in a patterned YBa₂Cu₃O_7‐δ thin film			Type	Journal Article
	Year	1996	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	68	Issue	10	Pages	1418-1420
	Keywords	YBCO HTS HEB mixers
	Abstract	Hot‐electron bolometric (HEB) mixing of 9.6 μm infrared radiation from two lasers in high‐quality YBa2Cu3O7−δ (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to ∼150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be ∼25 dB, of which 13 dB was due to the coupling loss. The HEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1613
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	Author	Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
	Title	9.6 μm wavelength mixing in a patterned YBa₂Cu₃O_7-δ thin film			Type	Conference Article
	Year	1996	Publication	Proc. 7^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 7^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	337-348
	Keywords	YBCO HTS HEB mixers
	Abstract	Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1615
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	Author	Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.
	Title	2.5 THz NbN hot electron mixer with integrated tapered slot antenna			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3548-3551
	Keywords	NbN HEB mixers
	Abstract	A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO₂membrane. A 0.5 micrometer thick SiO₂layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO₂layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO₃and H₂O₂.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1595
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	Author	Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E.
	Title	Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers			Type	Journal Article
	Year	2001	Publication	Physics of Vibrations	Abbreviated Journal	Physics of Vibrations
	Volume	9	Issue	3	Pages	205-210
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1069-1227	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1551
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	Author	Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Energy relaxation of two-dimensional electrons in the quantum Hall effect regime			Type	Journal Article
	Year	2000	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	71	Issue	1	Pages	31-34
	Keywords	2DEG, GaAs/AlGaAs heterostructures
	Abstract	The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”)			Approved	no
	Call Number				Serial	1559
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	Author	Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M.
	Title	Electron–phonon interaction in disordered conductors			Type	Journal Article
	Year	1999	Publication	Phys. Rev. B Condens. Matter	Abbreviated Journal	Phys. Rev. B Condens. Matter
	Volume	263-264	Issue		Pages	190-192
	Keywords	disordered conductors, electron-phonon interaction
	Abstract	The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1765
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	Author	Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation			Type	Journal Article
	Year	1994	Publication	Phys. Rev. B Condens. Matter.	Abbreviated Journal	Phys. Rev. B Condens. Matter.
	Volume	49	Issue	13	Pages	9091-9096
	Keywords	YBCO films
	Abstract	The transparency of a film/substrate interface for thermal phonons was investigated for YBa2Cu3O7 thin films deposited on MgO, Al2O3, LaAlO3, NdGaO3, and ZrO2 substrates. Both voltage response to pulsed-visible and to continuously modulated far-infrared radiation show two regimes of heat escape from the film to the substrate. That one dominated by the thermal boundary resistance at the film/substrate interface provides an initial exponential decay of the response. The other one prevailing at longer times or smaller modulation frequencies causes much slower decay and is governed by phonon diffusion in the substrate. The transparency of the boundary for phonons incident from the film on the substrate and also from the substrate on the film was determined separately from the characteristic time of the exponential decay and from the time at which one regime was changed to the other. Taking into account the specific heat of optical phonons and the temperature dependence of the group velocity of acoustic phonons, we show that the body of experimental data agrees with acoustic mismatch theory rather than with the model that assumes strong diffusive scattering of phonons at the interface.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:10009690			Approved	no
	Call Number				Serial	1648
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	Author	Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gol’tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.
	Title	Thermal boundary resistance at YBaCuO film-substrate interface			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	405-406
	Keywords	YBCO films
	Abstract	The nanosecond voltage response of YBaCuo films on Al2O3, MgO and ZrO2 substrates to electromagnetic radiation of millimeter and visible ranges has been investigated. The analysis of experimental conditions for Al2O3 and MgO substrates shows that the resistance change is monitored by the Kapitza boundary shift of temperature during the temporal interval ~ 100 ns limited by the time of phonon return from a substrate into a film. The observed exponential voltage decay is described by the phonon escape time which is proportional to the film thickness and is weakly temperature dependent.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1665
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	Author	Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
	Title	Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements			Type	Conference Article
	Year	1993	Publication	Proc. 1st European Conf. on Appl. Supercond.	Abbreviated Journal	Proc. 1st European Conf. on Appl. Supercond.
	Volume	2	Issue		Pages	1443-1446
	Keywords	YBCO HTS detectors
	Abstract	Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Freyhardt, H. C.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	3-88355-197-X	Medium
	Area		Expedition		Conference	1st European conference on applied superconductivity
	Notes				Approved	no
	Call Number				Serial	1661
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	Author	Semenov, A. D.; Gousev, Y. P.; Renk, K. F.; Voronov, B. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Schwaab, G.W.; Feinaugle, R.
	Title	Noise characteristics of a NbN hot-electron mixer at 2.5 THz			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3572-3575
	Keywords	NbN HEB mixers
	Abstract	The noise temperature of a NbN phonon cooled hot-electron mixer has been measured at a frequency of 2.5 THz for various operating conditions. We obtained for optimal operation a double sideband mixer noise temperature of /spl ap/14000 K and a system conversion loss of /spl ap/23 dB at intermediate frequencies up to 1 GHz. The dependences of the mixer noise temperature on the bias voltage, local oscillator power, and intermediate frequency were consistent with the phenomenological description based on the effective temperature approximation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1594
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	Author	Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M.
	Title	Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer			Type	Journal Article
	Year	1996	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	69	Issue	2	Pages	260-262
	Keywords	NbN HEB mixers
	Abstract	We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1610
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	Author	Semenov, A. D.; Gol’tsman, G. N.; Gogidze, I. G.; Sergeev, A. V.; Gershenzon, E. M.; Lang, P. T.; Renk, K. F.
	Title	Subnanosecond photoresponse of a YBaCuO thin film to infrared and visible radiation by quasiparticle induced suppression of superconductivity			Type	Journal Article
	Year	1992	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	60	Issue	7	Pages	903-905
	Keywords	YBCO HTS detectors
	Abstract	We observed subnanosecond photoresponse of a structured superconducting YBa2Cu3O7−δ thin film to infrared and visible radiation. We measured the voltage response of a current biased film (thickness 700 Å) in a resistive state to radiation pulses. From our results we conclude a response time of about 90 ps and a responsivity of about 4×1010 Ω/J. We attribute the response to Cooper pair breaking and suppression of the superconducting energy gap induced by nonequilibrium quasiparticles.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1672
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	Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
	Title	Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films			Type	Journal Article
	Year	1993	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	63	Issue	5	Pages	681-683
	Keywords	YBCO HTS detectors, nonequilibrium
	Abstract	The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1655
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	Author	Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Aksaev, E. E.; Gershenzon, E. M.
	Title	Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films			Type	Journal Article
	Year	1993	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	3	Issue	1	Pages	2132-2135
	Keywords	YBCO HTS HEB detectors
	Abstract	The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around T_c. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1558-2515	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1659
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	Author	Semenov, A. D.; Hübers, H.–W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M.
	Title	Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer			Type	Conference Article
	Year	2000	Publication	Proc. 11^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 11^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	39-48
	Keywords	NbN HEB mixers
	Abstract	We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	305
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	Author	Semenov, A. D.; Hübers, H.-W.; Schubert, J.; Gol'tsman, G. N.; Elantiev, A. I.; Voronov, B. M.; Gershenzon, E. M.
	Title	Design and performance of the lattice-cooled hot-electron terahertz mixer			Type	Journal Article
	Year	2000	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	88	Issue	11	Pages	6758-6767
	Keywords	HEB mixer, charge imbalance, HF current distribution
	Abstract	We present the measurements and the theoreticalmodel of the frequency-dependent noise temperature of a superconductor lattice-cooled hot-electron bolometer mixer in the terahertz frequency range. The increase of the noise temperature with frequency is a cumulative effect of the nonuniform distribution of the high-frequency current in the bolometer and the charge imbalance, which occurs at the edges of the normal domain and at the contacts with normal metal. We show that under optimal operation the fluctuation sensitivity of the mixer is determined by thermodynamic fluctuations of the noise power, whereas at small biases there appears additional noise, which is probably due to the flux flow. We propose the prescription of how to minimize the influence of the current distribution on the mixer performance.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	306
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
	Title	Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate			Type	Journal Article
	Year	1997	Publication	Phys. Rev. B	Abbreviated Journal	Phys. Rev. B
	Volume	56	Issue	16	Pages	10089-10096
	Keywords	disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
	Abstract	The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0163-1829	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1766
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	Author	Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M.
	Title	Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films			Type	Journal Article
	Year	1995	Publication	JETP	Abbreviated Journal	JETP
	Volume	80	Issue	5	Pages	960-964
	Keywords
	Abstract	The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	989
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	Author	Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Picosecond YBa₂Cu₃O_7−δdetector for far‐infrared radiation			Type	Journal Article
	Year	1992	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	72	Issue	11	Pages	5496-5499
	Keywords	YBCO HTS detectors
	Abstract	We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1668
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	Author	Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.
	Title	Ultrafast photoresponse of an YBa₂Cu₃O_7-δ film to far-infrared radiation pulses			Type	Journal Article
	Year	1993	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	18	Issue	2	Pages	96-97
	Keywords	YBCO HTS detectors
	Abstract	We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:19802049			Approved	no
	Call Number				Serial	1660
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	Author	Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Ultrafast photoresponse of a structured YBa₂Cu₃O_7-δ thin film to ultrashort FIR laser pulses			Type	Journal Article
	Year	1993	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	3	Issue	1	Pages	2160-2162
	Keywords	YBCO HTS detectors
	Abstract	The authors have investigated the photoinduced voltage response of a current-carrying structured YBa₂Cu₃O_7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1658
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	Author	Merkel, H. F.; Yagoubov, P. A.; Kroug, M.; Khosropanah, P.; Kollberg, E. L.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Noise temperature and absorbed LO power measurement methods for NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies			Type	Conference Article
	Year	1998	Publication	Proc. 28th European Microwave Conf.	Abbreviated Journal	Proc. 28th European Microwave Conf.
	Volume	1	Issue		Pages	294-299
	Keywords	NbN HEB mixers
	Abstract	In this paper the absorbed LO power requirements and the noise performance of NbN based phonon-cooled hot electron bolometric (HEB) quasioptical mixers are investigated for RF frequencies in the 0.55-1.1 range The minimal measured DSB noise temperatures are about 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz and 1250 K at 1.1 THz. The increase in noise temperature at 1.1THz is attributed to water absorption. The absorbed LO power is measured using a calorimetric approach. The results are subsequently corrected for lattice heating. These values are compared to results of a novel one dimensional hot spot mixer models and to a more traditional isotherm method which tends to underestimate the absorbed LO power for small bias powers. Typically a LO power between 50nW and 100nW is needed to pump the device to the optimal operating point.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	28th European Microwave Conference
	Notes				Approved	no
	Call Number				Serial	1580
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	Author	Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride			Type	Journal Article
	Year	1997	Publication	Tech. Phys. Lett.	Abbreviated Journal	Tech. Phys. Lett.
	Volume	23	Issue	6	Pages	486-488
	Keywords	NbN KID
	Abstract	A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D=1012 W−1·Hz1/2 at a temperature T=4.2 K and D=1016 W−1·cm· Hz1/2 at T=1.6 K.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7850	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1593
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	Author	Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M.
	Title	Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon			Type	Journal Article
	Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
	Volume	73	Issue	1	Pages	44-47
	Keywords	uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field
	Abstract	The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1752
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	Author	Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M.
	Title	Optical mixing in a patterned YBa₂Cu₃O_7-δ thin film			Type	Journal Article
	Year	1994	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	65	Issue	26	Pages	3398-3400
	Keywords	YBCO HTS HEB mixer, bandwidth
	Abstract	Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa₂Cu₃O_7-Î´ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	251
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	Author	Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse			Type	Journal Article
	Year	1995	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	77	Issue	8	Pages	4064-4070
	Keywords	YBCO HTS switches
	Abstract	A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-8979	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1623
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	Author	Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Evidence of subnanosecond transition stage in S-N current switching of YBaCuO films			Type	Conference Article
	Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2160	Issue		Pages	74-82
	Keywords	YBCO HTS switches
	Abstract	We report on a study of S-N and N-S current switching in high quality YBaCuO films deposited onto ZrO₂ and NdGaO₃ substrates. The films 60-120 nm thick prepared by laser ablation were structured into single strips and were provided with gold contacts. We monitored the time dependence of the resistance upon application of the voltage step on the film. Experiment performed within certain ranges of voltage amplitudes and temperatures showed the occurrence of the fast stage both in S-N (shorter than 300 ps) and N-S transition. We discuss the mechanism of switching taking into account the hot electron phenomena in YBaCuO. The contributions of various thermal processes in the subsequent stage of the resistance dynamic are also discussed. The basic limiting characteristics (average dissipated power, minimum work done for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Buhrman, R.A.; Clarke, J.T.; Daly, K.; Koch, R.H.; Luine, J.A.; Simon, R.W.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Superconductive Devices and Circuits
	Notes				Approved	no
	Call Number				Serial	1638
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	Author	Karasik, B. S.; Milostnaya, I. I.; Zorin, M. A.; Elantev, A. I.; Gol'tsman, G. N.; Gershenzon, E. M.
	Title	High speed current switching of homogeneous YBaCuO film between superconducting and resistive states			Type	Journal Article
	Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	5	Issue	2	Pages	3042-3045
	Keywords	YBCO HTS HEB switches
	Abstract	Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1620
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	Author	Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I.
	Title	Electron-phonon scattering rate in impure NbC films			Type	Abstract
	Year	1998	Publication	NASA/ADS	Abbreviated Journal	NASA/ADS
	Volume		Issue		Pages	Y35.08
	Keywords	NbC films
	Abstract	The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA
	Notes				Approved	no
	Call Number				Serial	1591
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	Author	Karasik, B. S.; Gol'tsman, G. N.; Voronov, B. M.; Svechnikov, S. I.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.; Yngvesson, K. S.
	Title	Hot electron quasioptical NbN superconducting mixer			Type	Journal Article
	Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	5	Issue	2	Pages	2232-2235
	Keywords	NbN HEB mixers
	Abstract	Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1622
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	Author	Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R.
	Title	Ultimate quantum efficiency of a superconducting hot-electron photodetector			Type	Journal Article
	Year	1998	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	73	Issue	26	Pages	3938-3940
	Keywords	NbN SSPD, SNSPD
	Abstract	The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1579
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	Author	Il'in, K. S.; Lindgren, M.; Currie, M. A.; Semenov, D.; Gol'tsman, G. N.; Sobolewski, Roman; Cherednichenko, S. I.; Gershenzon, E. M.
	Title	Picosecond hot-electron energy relaxation in NbN superconducting photodetectors			Type	Journal Article
	Year	2000	Publication	Appl. Phys. Lett.	Abbreviated Journal	Appl. Phys. Lett.
	Volume	76	Issue	19	Pages	2752-2754
	Keywords	NbN HEB detectors, two-temperature model, IF bandwidth
	Abstract	We report time-resolved characterization of superconducting NbN hot-electron photodetectors using an electro-optic sampling method. Our samples were patterned into micron-size microbridges from 3.5-nm-thick NbN films deposited on sapphire substrates. The devices were illuminated with 100 fs optical pulses, and the photoresponse was measured in the ambient temperature range between 2.15 and 10.6 K (superconducting temperature transition TC). The experimental data agreed very well with the nonequilibrium hot-electron, two-temperature model. The quasiparticle thermalization time was ambient temperature independent and was measured to be 6.5 ps. The inelastic electron–phonon scattering time Ï„e–ph tended to decrease with the temperature increase, although its change remained within the experimental error, while the phonon escape time Ï„es decreased almost by a factor of two when the sample was put in direct contact with superfluid helium. Specifically, Ï„e–ph and Ï„es, fitted by the two-temperature model, were equal to 11.6 and 21 ps at 2.15 K, and 10(±2) and 38 ps at 10.5 K, respectively. The obtained value of Ï„e–ph shows that the maximum intermediate frequency bandwidth of NbN hot-electron phonon-cooled mixers operating at TC can reach 16(+4/–3) GHz if one eliminates the bolometric phonon-heating effect.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0003-6951	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	856
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	Author	Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I.
	Title	Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity			Type	Conference Article
	Year	1996	Publication	Czech. J. Phys.	Abbreviated Journal	Czech. J. Phys.
	Volume	46	Issue	S2	Pages	857-858
	Keywords	NbC films
	Abstract	Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0011-4626	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1617
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	Author	Huebers, H.-W.; Semenov, A.; Schubert, J.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Krabbe, A.; Roeser, H.-P.
	Title	NbN hot-electron bolometer as THz mixer for SOFIA			Type	Conference Article
	Year	2000	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	4014	Issue		Pages	195-202
	Keywords	NbN HEB mixers, airborne, stratospheric observatory, SOFIA
	Abstract	Heterodyne receivers for applications in astronomy need quantum limited sensitivity. We have investigated phonon- cooled NbN hot electron bolometric mixers in the frequency range from 0.7 THz to 5.2 THz. The devices were 3.5 nm thin films with an in-plane dimension of 1.7 X 0.2 micrometers ² integrated in a complementary logarithmic spiral antenna. The best measured DSB receiver noise temperatures are 1300 K (0.7 THz), 2000 K (1.4 THz), 2100 K (1.6 THz), 2600 K (2.5 THz), 4000 K (3.1 THz), 5600 K (4.3 THz), and 8800 K (5.2 THz). The sensitivity fluctuation, the long term stability, and the antenna pattern were measured. The results demonstrate that this mixer is very well suited for GREAT, the German heterodyne receiver for SOFIA.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Melugin, R.K.; Roeser, H.-P.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Airborne Telescope Systems
	Notes				Approved	no
	Call Number				Serial	1554
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	Author	Huebers, H.-W.; Schubert, J.; Semenov, A.; Gol’tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Schwaab, G. W.
	Title	NbN phonon-cooled hot-electron bolometer as a mixer for THz heterodyne receivers			Type	Conference Article
	Year	1999	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	3828	Issue		Pages	410-416
	Keywords	NbN HEB mixers
	Abstract	We have investigated a phonon-cooled NbN hot electron bolometric (HEB) mixer in the frequency range from 0.7 THz to 5.2 THz. The device was a 3.5 nm thin film with an in- plane dimension of 1.7 X 0.2 micrometers ² integrated in a complementary logarithmic spiral antenna. The measured DSB receiver noise temperatures are 1500 K, 2200 K, 2600 K, 2900 K, 4000 K, 5600 K and 8800 K. The sensitivity fluctuation, the long term stability, and the antenna pattern were measured and the suitability of the mixer for a practical heterodyne receiver is discussed.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Chamberlain, J.M.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Terahertz Spectroscopy and Applications II
	Notes				Approved	no
	Call Number				Serial	1477
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	Author	Hübers, H.-W.; Semenov, A. D.; Richter, H.; Schubert, J.; Hadjiloucas, S.; Bowen, J. W.; Gol'tsman, G.; Voronov, B. M.; Gershenzon, E. M.
	Title	Antenna pattern of the quasi-optical hot-electron bolometric mixer at terahertz frequencies			Type	Conference Article
	Year	2001	Publication	Proc. 12^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 12^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	286-296
	Keywords	NbN HEB mixers
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	San Diego, CA, USA	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	323
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	Author	Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa₂Cu₃O_7-δ thin film			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	193-195
	Keywords	YBCO HTS detectors
	Abstract	We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1663
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	Author	Gousev, Yu. P.; Olsson, H. K.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.
	Title	NbN hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz			Type	Conference Article
	Year	1998	Publication	Proc. 9^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 9^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	121-129
	Keywords	NbN HEB mixers
	Abstract	We report on noise temperature measurements for a NbN phonon-cooled hot-electron mixer at radiation frequencies between 0.9 THz and 1.2 THz. Radiation was coupled to the mixer, placed in a vacuum chamber of He cryostat, by means of a planar spiral antenna and a Si immersion lens. A backward-wave oscillator, tunable throughout the spectral range, delivered an output power of few 1.1W that was enough for optimum operation of the mixer. At 4.2 K ambient temperature and 1.025 THz radiation frequency, we obtained a receiver noise temperature of 1550 K despite of using a relatively noisy room-temperature amplifier at the intermediate frequency port. The noise temperature was fairly constant throughout the entire operation range and for intermediate frequencies from 1 GHz to 2 GHz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1588
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	Author	Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F.
	Title	Broadband ultrafast superconducting NbN detector for electromagnetic radiation			Type	Journal Article
	Year	1994	Publication	J. Appl. Phys.	Abbreviated Journal	J. Appl. Phys.
	Volume	75	Issue	7	Pages	3695-3697
	Keywords	NbN HEB
	Abstract	An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	252
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	Author	Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M.
	Title	Electron-phonon interaction in disordered NbN films			Type	Journal Article
	Year	1994	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
	Volume	194-196	Issue		Pages	1355-1356
	Keywords	NbN films
	Abstract	Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1649
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	Author	Gousev, Y. P.; Semenov, A. D.; Goghidze, I. G.; Pechen, E. V.; Varlashkin, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F.
	Title	Current dependent noise in a YBa₂Cu₃O_7-δ hot-electron bolometer			Type	Journal Article
	Year	1997	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	7	Issue	2	Pages	3556-3559
	Keywords	YBCO HTS HEB mixers
	Abstract	We investigated the output noise of a YBa₂Cu₃O_7-δ (YBCO) superconducting hot-electron bolometer (HEB) in a large frequency range (10 kHz to 8 GHz); the bolometer either consisted of a structured 50 nm thick YBCO film on LaAlO/sub 3/ or a 30 nm thick film on a MgO substrate. We found that flicker noise dominated at low frequencies (below 1 MHz), while at higher frequencies Johnson noise and a current dependent noise were the main noise sources.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1592
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	Author	Gousev, Y. P.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M.; Semenov, A. D.; Barowski, H. S.; Nebosis, R. S.; Renk, K. F.
	Title	Quasioptical superconducting hot electron bolometer for submillmeter waves			Type	Journal Article
	Year	1996	Publication	Int. J. of Infrared and Millimeter Waves	Abbreviated Journal	Int. J. of Infrared and Millimeter Waves
	Volume	17	Issue	2	Pages	317-331
	Keywords	NbN HEB
	Abstract	We report on a superconducting hot electron bolometer coupled to radiation via a broadband antenna. The bolometer, a structured NbN film, was patterned on a thin dielectric membrane between terminals of a gold slotline antenna. We investigated the response to submillimeter radiation (wave-lengths ∼ 0.1 mm to 0.7 mm) in the fundamental Gaussian mode. We found that the directivity of the antenna was constant within a factor of 2.5 through the whole experimental range. The noise equivalent power of the bolometer at 119 µm was ∼ 3 · 10−13 W/Hz1/2; a time constant of ∼ 160 ps was estimated.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0195-9271	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1618
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	Author	Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.; Aksaev, E. E.; Gogidze, I. G.; Gershenzon, E. M.
	Title	Electron-phonon interaction in thin YBaCuO films and fast detectors			Type	Conference Article
	Year	1993	Publication	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences	Abbreviated Journal	Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences
	Volume	112	Issue		Pages	184-185
	Keywords	YBCO HTS detectors
	Abstract	The thin. YBaCuO film response to laser and submillimeter radiation demonstrates the picosecond nonequilibrium peak on the nanosecond bolometric background. Experimental data give an evidence for the spectral dependence of picosecond photoresponse probably due to a poor efficiency of electron multiplication processes. Presented results prove an availability of fast YBaCuO thin film detector.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Meissner, M.; Pohl, R. O.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992
	Notes				Approved	no
	Call Number				Serial	1662
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	Author	Gol’tsman, G. N.; Kouminov, P. B.; Goghidze, I. G.; Karasik, B. S.; Gershenzon, E. M.
	Title	Nonbolometric and fast bolometric responses of YBaCuO thin films in superconducting, resistive, and normal states			Type	Conference Article
	Year	1994	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2159	Issue		Pages	81-86
	Keywords	YBCO HTS HEB, nonbolornetric
	Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 micrometers and 1.54 micrometers was studied. In normal and resistive states both types of films demonstrate two components: nonequilibrium picosecond component and following bolometric nanosecond. The normalized amplitudes are almost the same for all films. In superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to several orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of order parameter by the excess of quasiparticles followed by the change of resistance in normal and resistive states or kinetic inductance in superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the crossection for current percolation through the disordered network os Josephson weak links and by a decrease of condensate density in neighboring regions.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Nahum, M.; Villegier, J.-C.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	High-Temperature Superconducting Detectors: Bolometric and Nonbolometric
	Notes				Approved	no
	Call Number				Serial	1641
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	Author	Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Phonon-cooled hot-electron bolometric mixer: overview of recent results			Type	Journal Article
	Year	1999	Publication	Appl. Supercond.	Abbreviated Journal	Appl. Supercond.
	Volume	6	Issue	10-12	Pages	649-655
	Keywords	NbN HEB mixers
	Abstract	The paper presents an overview of recent results for NbN phonon-cooled hot electron bolometric (HEB) mixers. The noise temperature of the receivers based on both quasioptical and waveguide versions of HEB mixer has crossed the level of 1 K·GHz−1 at 430 GHz (410 K) and 600–650 GHz (480 K) and is close to this level at 820 GHz (1100 K) and 900 GHz (980 K). The gain bandwidth measured for quasioptical HEB mixer at 620 GHz reached 4 GHz and the noise temperature bandwidth was almost 8 GHz. Local oscillator power requirements are about 1 μW for mixers made by photolithography and are about 100 nW for mixers made by e-beam lithography. The studies in terahertz receivers based on HEB superconducting mixers now present a dynamic, rapidly developing field.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0964-1807	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1564
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	Author	Gol’tsman, G. N.; Gershenzon, E. M.
	Title	High speed hot-electron superconducting bolometer			Type	Conference Article
	Year	1993	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	2104	Issue		Pages	181-182
	Keywords	NbN HEb, Nb, Al
	Abstract	Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1Ã‚Âµm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Birch, J.R.; Parker, T.J.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	18th International Conference on Infrared and Millimeter Waves
	Notes				Approved	no
	Call Number				Serial	1652
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	Author	Gol'tsman, G. N.; Kouminov, P.; Goghidze, I.; Gershenzon, E. M.
	Title	Nonequilibrium kinetic inductive response of YBaCuO thin films to low-power laser pulses			Type	Journal Article
	Year	1994	Publication	Phys. C: Supercond.	Abbreviated Journal	Phys. C: Supercond.
	Volume	235-240	Issue		Pages	1979-1980
	Keywords	YBCO HTS KID
	Abstract	Transient non-equilibrium kinetic inductive voltage response of YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 μm and 1.5 μm wavelength has been revealed. By increasing the sensitivity of 100 ps resolution time registration system and diminishing light intensity (fluence 0.1-1 μJ2/cm2) and transport current (density j≤105 A/cm2) we observed a perculiar bipolar signal form with nearly equal amplitudes of each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively of the same form as the response in the resistive and normal states: nonequilibrium picosecond scale component followed by bolometric nanosecond. Nonequilibrium response is interpreted as suppression of order parameter by excess of quasiparticles followed by a change in resistance in the resistive state and kinetic inductance in superconductive state.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4534	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1634
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	Author	Gol'tsman, G. N.; Karasik, B. S.; Svechnikov, S. I.; Gershenzon, E. M.; Ekström, H.; Kollberg E.
	Title	Noise temperature of NbN hot—electron quasioptical superconducting mixer in 200-700 GHz range			Type	Abstract
	Year	1995	Publication	Proc. 6^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 6^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	268
	Keywords	NbN HEB mixers, noise temperature
	Abstract	The electron heating effect in superconducting films is becoming very attractive for the development of THz range mixers because of the absence of frequency limitations inherent in the bolometric mechanism. However, the evidence for the spectral dependence of the position of optimal operating point has been found recently for NbN thin film devices 1.2 • The effect is presumably attributed to the variation in the absorption of radiation depending on the frequency. Since the resistive state is not spatially uniform the coupling efficiency of the mixer device with radiation can be different for frequencies larger than Zeilh and those smaller than 2Alh (d is the effective superconducting gap in the resistive state). To study the effect more thoroughly we have investigated the noise temperature of quasioptical NbN mixer device with broken hue tapered slot antenna in the frequency range 200-700 GHz. The device consists of several (5-10) parallel strips 1 jim wide and 6-7 tun thick made from NbN film on Si0 2 -Si 3 N 4 -Si membrane. The strips are connected with the gold contacts of the slot-line antenna which serves both as bias and IF leads. We used backward wave oscillators as LO sources and a standard hot/cold load technique for noise temperature measurements. The frequency dependence of noise temperature is mainly determined by two factors: frequency properties of the antenna and frequency dependence of the NbN film impedance. To separate both factors we monitored the frequency dependence of the device responsivity in the detector mode at a higher temperature within the superconducting transition where the impedance of NbN film is close to its normal resistance. In this case the impedance of the device itself is frequency independent. The experimental results will be reported at the Symposium. 1. G. Gollsman, S. Jacobsson, H. EkstrOm, B. Karasik, E. Kollberg, and E. Gershenzon, “Slot-line tapered antenna with NbN hot electron mixer for 300-360 GHz operation,” Proc of the 5th Int. Symp. on Space Terahertz Technology, pp. 209-213a, May 10-12,1994. 2. B.S. Karasik, G.N. Gol i tsman, B.M. Voronov, S.I. Svechnikov, E.M. Gershenzon, H. Ekstrom, S. Jacobsson, E. Kollberg, and K.S. Yngvesson, “Hot electron quasioptical NbN superconducting mixer,” presented at the ASC94, submitted to IEEE Trans. on Appl. Superconductivity.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1627
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	Author	Gol'tsman, G. N.; Goghidze, I. G.; Kouminov, P. B.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M.
	Title	Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses			Type	Journal Article
	Year	1994	Publication	J. Supercond.	Abbreviated Journal	J. Supercond.
	Volume	7	Issue	4	Pages	751-755
	Keywords	YBCO HTS detector, nonequilibrium response
	Abstract	The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0896-1107	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1636
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	Author	Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M.
	Title	Antenna – coupled superconducting electron-heating bolometer			Type	Conference Article
	Year	1993	Publication	Proc. 4^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 4^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	623-628
	Keywords	HEB
	Abstract	We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1657
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	Author	Gol'tsman, G. N.; Semenov, A. D.; Gousev, Y. P.; Zorin, M. A.; Gogidze, I. G.; Gershenzon, E. M.; Lang, P. T.; Knott, W. J.; Renk, K. F.
	Title	Sensitive picosecond NbN detector for radiation from millimetre wavelengths to visible light			Type	Journal Article
	Year	1991	Publication	Supercond. Sci. Technol.	Abbreviated Journal	Supercond. Sci. Technol.
	Volume	4	Issue	9	Pages	453-456
	Keywords	NbN HEB detectors
	Abstract	The authors report on the application of a broad-band NbN film detector which has high sensitivity and picosecond response time for detection of radiation from millimetre wavelengths to visible light. From a study of amplitude modulated radiation of backward-wave tubes and picosecond pulses from gas and solid state lasers at wavelengths between 2 mm and 0.53 mu m, they found a detectivity of 1010 W-1 cm Hz-1/2 and a response time of less than 50 ps at T=10 K. The characteristics were provided by using a 150 AA thick NbN film patterned into a structure of micron strips. According to the proposed detection mechanism, namely electron heating, they expect an intrinsic response time of approximately 20 ps at the same temperature.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0953-2048	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	242
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	Author	Gol'tsman, G. N.; Karasik, B. S.; Okunev, O. V.; Dzardanov, A. L.; Gershenzon, E. M.; Ekstrom, H.; Jacobsson, S.; Kollberg, E.
	Title	NbN hot electron superconducting mixers for 100 GHz operation			Type	Journal Article
	Year	1995	Publication	IEEE Trans. Appl. Supercond.	Abbreviated Journal	IEEE Trans. Appl. Supercond.
	Volume	5	Issue	2	Pages	3065-3068
	Keywords	NbN HEB mixers
	Abstract	NbN is a promising superconducting material for hot-electron superconducting mixers with an IF bandwidth larger than 1 GHz. In the 1OO GHz frequency range, the following parameters were obtained for 50 /spl Aring/ thick NbN films at 4.2 K: receiver noise temperature (DSB) /spl sim/1000 K; conversion loss /spl sim/10 dB; IF bandwidth /spl sim/1 GHz; and local oscillator power /spl sim/1 /spl mu/W. An increase of the critical current of the NbN film, increased working temperature, and a better mixer matching may allow a broader IF bandwidth up to 2 GHz, reduced conversion losses down to 3-5 dB and a receiver noise temperature (DSB) down to 200-300 K.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1051-8223	ISBN		Medium
	Area		Expedition		Conference
	Notes	About LO power required			Approved	no
	Call Number				Serial	255
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	Author	Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I.
	Title	Intervalley cyclotron-impurity resonance of electrons in n-Ge			Type	Journal Article
	Year	1976	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	24	Issue	3	Pages	125-128
	Keywords	n-Ge, cyclotron-impurity resonance
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1730
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	Author	Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G.
	Title	Absorption spectra in electron transitions between excited states of impurities in germanium			Type	Journal Article
	Year	1975	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	22	Issue	4	Pages	95-97
	Keywords	Ge, impurities, excited states, absorption spectra
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1773
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	Author	Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R.
	Title	Character of submillimeter photoconductivity in n-lnSb			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	1	Pages	121-128
	Keywords
	Abstract	A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ phisix @			Serial	985
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	Author	Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons			Type	Journal Article
	Year	1975	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	40	Issue	2	Pages	311-315
	Keywords	Ge, cyclotron resonance
	Abstract	Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1768
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	Author	Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
	Title	Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions			Type	Journal Article
	Year	1976	Publication	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников	Abbreviated Journal	Presumably: Sov. Phys. Semicond. \| Физика и техника полупроводников
	Volume	10	Issue		Pages	1379-1383
	Keywords	Ge, cyclotron resonance, charged impurities,
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1772
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	Author	Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D.
	Title	Picosecond response of YBaCuO films to electromagnetic radiation			Type	Conference Article
	Year	1990	Publication	Proc. European Conf. High-Tc Thin Films and Single Crystals	Abbreviated Journal	Proc. European Conf. High-Tc Thin Films and Single Crystals
	Volume		Issue		Pages	457-462
	Keywords	YBCO HTS detectors
	Abstract	Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor	Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989
	Notes				Approved	no
	Call Number				Serial	1695
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	Author	Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	1321-1324
	Keywords	YBCO HTS detectors
	Abstract	Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1941-0069	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1679
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	Author	Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D.
	Title	Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	1317-1320
	Keywords	YBCO, HTS, Nb HEB mixers
	Abstract	A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1941-0069	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1681
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	Author	Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A.
	Title	Ultrafast superconductive switch			Type	Journal Article
	Year	1991	Publication	IEEE Trans. Magn.	Abbreviated Journal	IEEE Trans. Magn.
	Volume	27	Issue	2	Pages	2844-2846
	Keywords	Nb superconducting switch
	Abstract	The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 520.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1941-0069	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1680
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	Author	Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y.
	Title	Germanium hot-electron narrow-band detector			Type	Journal Article
	Year	1971	Publication	Sov. Radio Engineering And Electronic Physics	Abbreviated Journal	Sov. Radio Engineering And Electronic Physics
	Volume	16	Issue	8	Pages	1346
	Keywords	Ge HEB detectors
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1741
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G.
	Title	Investigation of excited donor states in GaAs			Type	Journal Article
	Year	1974	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	7	Issue	10	Pages	1248-1250
	Keywords	GaAs, excited donor states
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1733
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Orlov, L.
	Title	Investigation of population and ionization of donor excited states in Ge			Type	Conference Article
	Year	1976	Publication	Physics of Semiconductors	Abbreviated Journal	Physics of Semiconductors
	Volume		Issue		Pages	631-634
	Keywords	Ge, donor excited states
	Abstract
	Address	Amsterdam
	Corporate Author				Thesis
	Publisher	North-Holland Publishing Co.	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1732
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	Author	Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of submillimeter impurity and exciton photoconduction in Ge			Type	Journal Article
	Year	1982	Publication	Optics and Spectroscopy	Abbreviated Journal	Optics and Spectroscopy
	Volume	52	Issue	4	Pages	454-455
	Keywords	Ge, exciton photoconduction
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1715
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	Author	Gershenzon, E. M.; Goltsman, G. N.
	Title	Zeeman effect in excited-states of donors in germanium			Type	Journal Article
	Year	1972	Publication	Sov. Phys. Semicond.	Abbreviated Journal	Sov. Phys. Semicond.
	Volume	6	Issue	3	Pages	509
	Keywords	Ge, donors, Zeeman effect
	Abstract
	Address
	Corporate Author				Thesis
	Publisher	Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa	Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1737
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	Author	Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G.
	Title	Energy spectrum of free excitons in germanium			Type	Journal Article
	Year	1973	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	18	Issue	3	Pages	93
	Keywords	Ge, free excitons, energy spectrum
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1734
Permanent link to this record



	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Zorin, M. A.; Karasik, B. S.; Trifonov, V. A.
	Title	Nonequilibrium and bolometric response of YBaCuO films in a resistive state to infrared low intensity radiation			Type	Conference Article
	Year	1994	Publication	Council on Low-temp. Phys.	Abbreviated Journal	Council on Low-temp. Phys.
	Volume		Issue		Pages	82-83
	Keywords	YBCO HTS HEB
	Abstract
	Address	Dubna
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Joint Inst. for Nuclear Research, Dubna (Russian Federation); 296 p; 1994; p. 82-83; 30. Conference on low-temperature physics; 30. Soveshchanie po fizike nizkikh temperatur; Dubna (Russian Federation); 6-8 Sep 1994
	Notes	Неравновесный и болометрический отклик YBaCuO пленок в резиотивном состоянии на инфракрасное лазерное излучение малой интенсивности			Approved	no
	Call Number				Serial	1632
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches			Type	Conference Article
	Year	1992	Publication	Progress in High Temperature Superconductivity	Abbreviated Journal	Progress in High Temperature Superconductivity
	Volume	32	Issue		Pages	190-195
	Keywords	superconducting films, heating of electrons
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	International Conference on High Temperature Superconductivity and Localization Phenomena , Moscow, Russia , 11 – 15 May 1991
	Notes	https://books.google.co.kr/books?hl=en&lr=&id=uCI0DwAAQBAJ&oi=fnd&pg=PA190&ots=z7WGjXYWr4&sig=TQ6G6dKsmcj4faYe1ZLw_BFmps8			Approved	no
	Call Number				Serial	1666
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V.
	Title	Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation			Type	Journal Article
	Year	1990	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	76	Issue	4	Pages	493-497
	Keywords	YBCO HTS detectors
	Abstract	The ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter to near infrared. With the rise of radiation frequency the Josephson detection at the grain boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. Electron-phonon relaxation time τeph is determined by direct measurements and analyses quasistationary electron heating. Temperature dependence of τeph at T ≤ 40 K was found to be τeph ∼ T−1. The results show that detectors with the response time of few picoseconds at nitrogen temperature are attainable.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1685
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.
	Title	Submillimeter backward wave tube spectrometer for measuring superconducting film transmission			Type	Journal Article
	Year	1983	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	26	Issue	5	Pages	134-137
	Keywords	BWO spectroscopy, spectrometer, transmission
	Abstract	A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0032-8162	ISBN		Medium
	Area		Expedition		Conference
	Notes	Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок			Approved	no
	Call Number				Serial	1713
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R.
	Title	Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1986	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	64	Issue	4	Pages	889-897
	Keywords	Ge, trapping of free carriers
	Abstract	Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1707
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Observation of the free-exciton spectrum at submillimeter wavelengths			Type	Journal Article
	Year	1972	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	16	Issue	4	Pages	161-162
	Keywords	Ge, energy spectrum, free excitons
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1736
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Population and lifetime of excited states of shallow impurities in Ge			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	49	Issue	2	Pages	355-362
	Keywords	Ge, photothermal ionization, shallow impurities
	Abstract	An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1719
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Investigation of free excitons in Ge and their condensation at submillimeter wavelengths			Type	Journal Article
	Year	1976	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	43	Issue	1	Pages	116-122
	Keywords	Ge, free excitons
	Abstract	Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1731
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.
	Title	Submillimeter spectroscopy of semiconductors			Type	Journal Article
	Year	1973	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	37	Issue	2	Pages	299-304
	Keywords	semiconductors, submillimeter spectroscopy, spectrometer, BWO, Ge, free excitons
	Abstract	The possibility is considered of carrying out submillimeter-wave spectral investigations of semiconductors by means of a high resolution spectrometer with backward-wave tubes. Results of a study of the excitation spectra of small impurities, D-(A +) centers and free excitons in germanium are presented.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1735
Permanent link to this record



	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
	Title	Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction			Type	Journal Article
	Year	1991	Publication	Phys. B Condens. Mat.	Abbreviated Journal	Phys. B Condens. Mat.
	Volume	169	Issue	1-4	Pages	629-630
	Keywords	impure superconductors
	Abstract	Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0921-4526	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1682
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V.
	Title	Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction			Type	Journal Article
	Year	1990	Publication	Solid State Communications	Abbreviated Journal	Solid State Communications
	Volume	75	Issue	8	Pages	639-641
	Keywords	impure superconductors
	Abstract	Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0038-1098	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1687
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G.
	Title	Capture of photoexcited carriers by shallow impurity centers in germanium			Type	Journal Article
	Year	1979	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	50	Issue	4	Pages	728-734
	Keywords	Ge, photoexcited carriers, shallow impurity centers
	Abstract	Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1720
Permanent link to this record



	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Kinetics of electron and hole binding into excitons in germanium			Type	Journal Article
	Year	1983	Publication	Sov. Phys. JETP	Abbreviated Journal	Sov. Phys. JETP
	Volume	57	Issue	2	Pages	369-376
	Keywords	Ge, electron and hole binding
	Abstract	The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1711
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G.
	Title	Cross section for binding of free carriers into excitons in germanium			Type	Journal Article
	Year	1981	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	33	Issue	11	Pages	574
	Keywords	Ge, excitons, photoconductivity
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1718
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I.
	Title	Submillimeter backward-wave-tube spectrometer-relaxometer			Type	Journal Article
	Year	1987	Publication	Pribory i Tekhnika Eksperimenta	Abbreviated Journal	Pribory i Tekhnika Eksperimenta
	Volume	30	Issue	4	Pages	131-137
	Keywords	BWO, applications
	Abstract	A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1699
Permanent link to this record



	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P.
	Title	Binding energy of a carrier with a neutral impurity atom in germanium and in silicon			Type	Journal Article
	Year	1971	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	14	Issue	5	Pages	185-186
	Keywords	Ge, Si, neutral impurity atom, binding energy
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1739
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D.
	Title	Measurement of the energy gap in the compound YBaCu₃O_9-δ on the basis of the IR absorption spectrum			Type	Journal Article
	Year	1987	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	46	Issue	5	Pages	237-238
	Keywords	YBCO HTS detectors
	Abstract	For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1703
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V.
	Title	Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials			Type	Journal Article
	Year	1992	Publication	Sverkhprovodimost': Fizika, Khimiya, Tekhnika	Abbreviated Journal	Sverkhprovodimost': Fizika, Khimiya, Tekhnika
	Volume	5	Issue	6	Pages	1129-1140
	Keywords	IR HEB detectors
	Abstract	Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0131-5366	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1673
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	Author	Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L.
	Title	Observation of free carrier resonances in p-type germanium at submillimeter wavelengths			Type	Journal Article
	Year	1978	Publication	Sov. Phys. Solid State	Abbreviated Journal	Sov. Phys. Solid State
	Volume	20	Issue	4	Pages	573-579
	Keywords	p-Ge, free carriers, resonances
	Abstract	The spectrum of hole resonances in pure p-Ge for submillimetre in quantizing magnetic fields has been studied and identified. Measurements of photoconductivity spectra of p-Ge were made in the wave range lambda = 2-0.3 mm at temp. of 4.2-15 deg K in magnetic fields H up to 40 Measurements at various frequencies showed that the position of a series of characteristic resonances depends on the frequency of the illumination. This is in line with theoretical conclusions about the effective mass of the carriers increasing with rise in the magnetic field as a result of the interaction of the edge of the valency band with the split spin-orbital interaction of the sub 7 exp + band and the conduction band. The relative intensity of the quantum resonance lines of the free holes depends on the excitation conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1721
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