|
Records |
Links |
|
Author |
Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
|
|
Title |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
Type |
Journal Article |
|
Year |
1995 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
61 |
Issue |
7 |
Pages |
591-595 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1624 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
|
|
Title |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
Type |
Journal Article |
|
Year |
1996 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
64 |
Issue |
5 |
Pages |
404-409 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
Approved |
no |
|
|
Call Number |
|
Serial |
1608 |
|
Permanent link to this record |
|
|
|
|
Author |
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
|
|
Title |
Generation of nanosecond terahertz pulses by the optical rectification method |
Type |
Journal Article |
|
Year |
2012 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
96 |
Issue |
2 |
Pages |
94-97 |
|
|
Keywords |
optical rectification, lithium niobate crystal |
|
|
Abstract |
The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1377 |
|
Permanent link to this record |
|
|
|
|
Author |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
|
|
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
|
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
|
|
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
|
|
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
Approved |
no |
|
|
Call Number |
|
Serial |
1559 |
|
Permanent link to this record |
|
|
|
|
Author |
Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
|
|
Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
|
|
Volume |
73 |
Issue |
1 |
Pages |
44-47 |
|
|
Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
|
|
Abstract |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1752 |
|
Permanent link to this record |
|
|
|
|
Author |
Gol’tsman, G. N.; Smirnov, K. V. |
|
|
Title |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
|
|
Volume |
74 |
Issue |
9 |
Pages |
474-479 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах |
Approved |
no |
|
|
Call Number |
|
Serial |
1541 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
|
|
Title |
Carrier lifetime in excited states of shallow impurities in germanium |
Type |
Journal Article |
|
Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
25 |
Issue |
12 |
Pages |
539-543 |
|
|
Keywords |
Ge, shallow impurities, excited states |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1726 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
|
|
Title |
Heating of quasiparticles in a superconducting film in the resistive state |
Type |
Journal Article |
|
Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
34 |
Issue |
5 |
Pages |
268-271 |
|
|
Keywords |
|
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1716 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
|
|
Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
|
Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
24 |
Issue |
3 |
Pages |
125-128 |
|
|
Keywords |
n-Ge, cyclotron-impurity resonance |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1730 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
|
|
Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
|
Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
22 |
Issue |
4 |
Pages |
95-97 |
|
|
Keywords |
Ge, impurities, excited states, absorption spectra |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1773 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
|
|
Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
|
Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
18 |
Issue |
3 |
Pages |
93 |
|
|
Keywords |
Ge, free excitons, energy spectrum |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1734 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
|
|
Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
|
Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
16 |
Issue |
4 |
Pages |
161-162 |
|
|
Keywords |
Ge, energy spectrum, free excitons |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1736 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
|
|
Title |
Cross section for binding of free carriers into excitons in germanium |
Type |
Journal Article |
|
Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
33 |
Issue |
11 |
Pages |
574 |
|
|
Keywords |
Ge, excitons, photoconductivity |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1718 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
|
|
Title |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
Type |
Journal Article |
|
Year |
1971 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
14 |
Issue |
5 |
Pages |
185-186 |
|
|
Keywords |
Ge, Si, neutral impurity atom, binding energy |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1739 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
|
|
Title |
Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
Type |
Journal Article |
|
Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
46 |
Issue |
5 |
Pages |
237-238 |
|
|
Keywords |
YBCO HTS detectors |
|
|
Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1703 |
|
Permanent link to this record |