| Records |
Author  |
Gershenzon, E.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Heating of quasiparticles in a superconducting film in the resistive state |
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Journal Article |
| Year |
1981 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
34 |
Issue |
5 |
Pages |
268-271 |
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1716 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
| Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
Type |
Journal Article |
| Year |
1976 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
24 |
Issue |
3 |
Pages |
125-128 |
| Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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| Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
| Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
Type |
Journal Article |
| Year |
1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
22 |
Issue |
4 |
Pages |
95-97 |
| Keywords |
Ge, impurities, excited states, absorption spectra |
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1773 |
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Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
| Title |
Character of submillimeter photoconductivity in n-lnSb |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
Type |
Journal Article |
| Year |
1975 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
40 |
Issue |
2 |
Pages |
311-315 |
| Keywords |
Ge, cyclotron resonance |
| Abstract |
Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. |
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1768 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
| Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
| Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
18 |
Issue |
3 |
Pages |
93 |
| Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
| Title |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
Type |
Journal Article |
| Year |
1986 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
64 |
Issue |
4 |
Pages |
889-897 |
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Ge, trapping of free carriers |
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Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). |
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1707 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Observation of the free-exciton spectrum at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1972 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
| Volume |
16 |
Issue |
4 |
Pages |
161-162 |
| Keywords |
Ge, energy spectrum, free excitons |
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1736 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Population and lifetime of excited states of shallow impurities in Ge |
Type |
Journal Article |
| Year |
1979 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
49 |
Issue |
2 |
Pages |
355-362 |
| Keywords |
Ge, photothermal ionization, shallow impurities |
| Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. |
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1719 |
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| Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
| Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
Type |
Journal Article |
| Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
| Volume |
43 |
Issue |
1 |
Pages |
116-122 |
| Keywords |
Ge, free excitons |
| Abstract |
Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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