Xu, Y., Zheng, X., Williams, C., Verevkin, A., Sobolewski, R., Chulkova, G., et al. (2001). Ultrafast superconducting hot-electron single-photon detector. In CLEO (345).
Abstract: Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.
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Verevkin, A., Xu, Y., Zheng, X., Williams, C., Sobolewski, R., Okunev, O., et al. (2001). Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 462–468).
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Verevkin, A., Williams, C., Gol’tsman, G. N., Sobolewski, R., & Gilbert, G. (2001). Single-photon superconducting detectors for practical high-speed quantum cryptography. Optical Society of America.
Abstract: We have developed an ultrafast superconducting single-photon detector with negligible dark counting rate. The detector is based on an ultrathin, submicron-wide NbN meander-type stripe and can detect individual photons in the visible to near-infrared wavelength range at a rate of at least 10 Gb/s. The above counting rate allows us to implement the NbN device to unconditionally secret quantum key distRochester, New Yorkribution in a practical, high-speed system using real-time Vernam enciphering.
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Verevkin, A., Slysz, W., Pearlman, A., Zhang, J., Sobolewski, R., Okunev, O., et al. (2003). Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In CLEO/QELS (CThM8). Optical Society of America.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Verevkin, A. A., Zhang, J., Slysz, W., Sobolewski, R., Lipatov, A. P., Okunev, O., et al. (2002). Superconducting single-photon detectors for GHz-rate free-space quantum communications. In J. C. Ricklin, & D. G. Voelz (Eds.), Proc. SPIE (Vol. 4821, pp. 447–454). SPIE.
Abstract: We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Voronov, B. M., Gol’tsman, G. N., Gershenson, E. M., et al. (1999). Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts. Semicond., 33(5), 551–554.
Abstract: The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol’tsman, G. N., Gershenzon, E. M., & Ingvesson, K. S. (1996). Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K. JETP Lett., 64(5), 404–409.
Abstract: The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
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Vakhtomin, Y. B., Finkel, M. I., Antipov, S. V., Smirnov, K. V., Kaurova, N. S., Drakinskii, V. N., et al. (2003). The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer. J. of communications technol. & electronics, 48(6), 671–675.
Abstract: Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
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Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Zhang, W., et al. (2006). Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 688–689).
Abstract: Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
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Tuchak, A. N., Gol’tsman, G. N., Kitaeva, G. K., Penin, A. N., Seliverstov, S. V., Finkel, M. I., et al. (2012). Generation of nanosecond terahertz pulses by the optical rectification method. JETP Lett., 96(2), 94–97.
Abstract: The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.
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