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Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N. |
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Title |
Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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462-468 |
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NbN SSPD, SNSPD |
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no |
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1539 |
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Verevkin, A.; Williams, C.; Gol’tsman, G. N.; Sobolewski, R.; Gilbert, G. |
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Title |
Single-photon superconducting detectors for practical high-speed quantum cryptography |
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Miscellaneous |
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Year |
2001 |
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OFCC/ICQI |
Abbreviated Journal |
OFCC/ICQI |
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Pa3 |
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Keywords |
NbN SSPD, SNSPD, QKD, quantum cryptography |
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Abstract |
We have developed an ultrafast superconducting single-photon detector with negligible dark counting rate. The detector is based on an ultrathin, submicron-wide NbN meander-type stripe and can detect individual photons in the visible to near-infrared wavelength range at a rate of at least 10 Gb/s. The above counting rate allows us to implement the NbN device to unconditionally secret quantum key distRochester, New Yorkribution in a practical, high-speed system using real-time Vernam enciphering. |
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Rochester, New York |
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Optical Society of America |
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Optical Fiber Communication Conference and International Conference on Quantum Information |
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-- from poster session. |
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1544 |
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Verevkin, A.; Slysz, W.; Pearlman, A.; Zhang, J.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Currie, M. |
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Title |
Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors |
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Conference Article |
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2003 |
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CLEO/QELS |
Abbreviated Journal |
CLEO/QELS |
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CThM8 |
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Keywords |
NbN SSPD; SNSPD; Infrared; Quantum detectors; Detectors; Photon counting; Quantum communications; Quantum cryptography; Single photon detectors; Superconductors |
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We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1517 |
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Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R. |
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Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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Journal Article |
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Year |
2004 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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Volume |
51 |
Issue |
9-10 |
Pages |
1447-1458 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers. |
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0950-0340 |
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no |
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1488 |
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Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
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Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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Conference Article |
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Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
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384-3 |
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107-116 |
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2DEG, AlGaAs/GaAs |
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A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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no |
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Serial |
1536 |
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Verevkin, A.; Zhang, J.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smirnov, K.; Gol'tsman, G. N.; Semenov, A. |
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Title |
Detection efficiency of large-active-area NbN single-photon superconducting detectors in the ultraviolet to near-infrared range |
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Journal Article |
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Year |
2002 |
Publication |
Appl. Phys. Lett. |
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80 |
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25 |
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4687-4689 |
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Keywords |
NbN SSPD, SNSPD, QE |
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We report our studies on spectral sensitivity of meander-type, superconducting NbN thin-film single-photon detectors (SPDs), characterized by GHz counting rates of visible and near-infrared photons and negligible dark counts. Our SPDs exhibit experimentally determined quantum efficiencies ranging from ∼0.2% at the 1.55 μm wavelength to ∼70% at 0.4 μm. Spectral dependences of the detection efficiency (DE) at the 0.4 to 3.0-μm-wavelength range are presented. The exponential character of the DE dependence on wavelength, as well as its dependence versus bias current, is qualitatively explained in terms of superconducting fluctuations in our ultrathin, submicron-width superconducting stripes. The DE values of large-active-area NbN SPDs in the visible range are high enough for modern quantum communications. |
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331 |
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Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
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Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
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Journal Article |
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1995 |
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JETP Lett. |
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JETP Lett. |
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61 |
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7 |
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591-595 |
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2DEG, AlGaAs/GaAs heterostructures |
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The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults. |
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1624 |
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Verevkin, A. A.; Zhang, J.; Slysz, W.; Sobolewski, R.; Lipatov, A. P.; Okunev, O.; Chulkova, G.; Korneev, A.; Gol’tsman, G. N. |
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Superconducting single-photon detectors for GHz-rate free-space quantum communications |
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Conference Article |
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2002 |
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Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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4821 |
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447-454 |
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NbN SSPD, SNSPD, single-photon detector, thin-film superconductivity, quantum cryptography, ultrafast communications |
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We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography. |
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SPIE |
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Ricklin, J.C.; Voelz, D.G. |
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Free-Space Laser Communication and Laser Imaging II |
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Call Number |
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1523 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
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Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
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Journal Article |
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1999 |
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Semicond. |
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Semicond. |
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33 |
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5 |
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551-554 |
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2DEG, AlGaAs/GaAs heterostructures |
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The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
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1063-7826 |
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1571 |
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Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
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Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
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Journal Article |
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1996 |
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JETP Lett. |
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JETP Lett. |
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64 |
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5 |
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404-409 |
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2DEG, AlGaAs/GaAs heterostructures |
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The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions. |
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0021-3640 |
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http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) |
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