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Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P. |
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The stability of a terahertz receiver based on a superconducting integrated receiver |
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Journal Article |
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2011 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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24 |
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3 |
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035003 |
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SIS mixer, SIR, stability |
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We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s. |
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RPLAB @ gujma @ |
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705 |
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Ovchinnikov, Yu. N.; Varlamov, A. A. |
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Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical |
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Journal Article |
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2009 |
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arXiv |
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0910.2659v1 |
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1-4 |
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superconducting nanowire, resistance calculation |
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The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition. |
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arXiv:0910.2659v1; 4 pages, 3 figures |
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931 |
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Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
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Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051050 (1 to 5) |
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field-effect transistor, FET, carbon nanotube, CNT |
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In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. |
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1742-6588 |
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1301 |
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Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
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Graphene-layer and graphene-nanoribbon FETs as THz detectors |
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Conference Article |
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2018 |
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J. Phys.: Conf. Ser. |
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J. Phys.: Conf. Ser. |
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1124 |
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051054 |
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field-effect transistor, FET, monolayer graphene, graphene nanoribbons |
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We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. |
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1300 |
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Li, Chao-Te; Chen, Tse-Jun; Ni, Tong-Liang; Lu, Wei-Chun; Chiu, Chuang-Ping; Chen, Chong-Wen; Chang, Yung-Chin; Wang, Ming-Jye Shi, Sheng-Cai |
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Development of SIS mixers for SMA 400-520 GHz band |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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24-30 |
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SIS mixer, noise temperature, SMA |
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SIS junction mixers were developed for SMA 400-520 GHz band. The results show receiver noise temperature around 100 K across the band, with noise contribution from RF loss and IF estimated to be around 50 K and 20K, respectively. Two schemes were used to tune out junction's parasitic capacitance. When a parallel inductor is employed, the input impedance is close to Rn, which facilitates impedance matching between the junction and the waveguide probe. Waveguide probes were designed to achieve a low feed-point impedance to match to the junction resistance. Optimum embedding impedances for lower receiver noise temperature were investigated. Performances of two schemes and composition of receiver noise were also discussed. |
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617 |
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