Author |
Title |
Year |
Publication |
Prokhodtsov, A.; Kovalyuk, V.; An, P.; Golikov, A.; Shakhovoy, R.; Sharoglazova, V.; Udaltsov, A.; Kurochkin, Y.; Goltsman, G. |
Silicon nitride Mach-Zehnder interferometer for on-chip quantum random number generation |
2020 |
J. Phys.: Conf. Ser. |
Polyakova, M. I.; Korneev, A. A.; Semenov, A. V. |
Comparison single- and double- spot detection efficiencies of SSPD based to MoSi and NbN films |
2020 |
J. Phys.: Conf. Ser. |
Pentin, I.; Vakhtomin, Y.; Seleznev, V.; Smirnov, K. |
Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation |
2020 |
Sci. Rep. |
Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
2020 |
J. Luminescence |
Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory |
Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors |
2020 |
Graphene and 2dm Virt. Conf. |