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Shcherbatenko, M. L., Elezov, M. S., Goltsman, G. N., & Sych, D. V. (2020). Sub-shot-noise-limited fiber-optic quantum receiver. Phys. Rev. A, 101(3), 032306 (1 to 5).
Abstract: We experimentally demonstrate a quantum receiver based on the Kennedy scheme for discrimination between two phase-modulated weak coherent states. The receiver is assembled entirely from standard fiber-optic elements and operates at a conventional telecom wavelength of 1.55 μm. The local oscillator and the signal are transmitted through different optical fibers, and the displaced signal is measured with a high-efficiency superconducting nanowire single-photon detector. We show the discrimination error rate is two times below that of a shot-noise-limited receiver with the same system detection efficiency.
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Shah, N., Pekker, D., & Goldbart, P. M. (2008). Inherent stochasticity of superconductor-resistor switching behavior in nanowires. Phys. Rev. Lett., 101, 207001(1 to 4).
Abstract: We study the stochastic dynamics of superconductive-resistive switching in hysteretic current-biased superconducting nanowires undergoing phase-slip fluctuations. We evaluate the mean switching time using the master-equation formalism, and hence obtain the distribution of switching currents. We find that as the temperature is reduced this distribution initially broadens; only at lower temperatures does it show the narrowing with cooling naively expected for phase slips that are thermally activated. We also find that although several phase-slip events are generally necessary to induce switching, there is an experimentally accessible regime of temperatures and currents for which just one single phase-slip event is sufficient to induce switching, via the local heating it causes.
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Shah, J., Pinczuk, A., Gossard, A. C., & Wiegmann, W. (1985). Energy-loss rates for hot electrons and holes in GaAs quantum wells. Phys. Rev. Lett., 54, 2045–2048.
Abstract: We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
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Sergeev, A., & Mitin, V. (2000). Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials. Phys. Rev. B., 61(9), 6041–6047.
Abstract: Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film.
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Sergeev, A., Karasik, B. S., Ptitsina, N. G., Chulkova, G. M., Il'in, K. S., & Gershenzon, E. M. (1999). Electron–phonon interaction in disordered conductors. Phys. Rev. B Condens. Matter, 263-264, 190–192.
Abstract: The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model.
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