Author |
Title |
Year |
Publication |
Volume |
Pages |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Picosecond response on optical-range emission in thin YBaCuO films |
1991 |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
17 |
6-10 |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. |
Limiting characteristics of fast-response superconducting bolometers |
1989 |
Zhurnal Tekhnicheskoi Fiziki |
59 |
11-120 |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
Fast-response superconducting electron bolometer |
1989 |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
15 |
88-92 |
Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Limiting characteristic of fast superconducting bolometers |
1989 |
Sov. Phys.-Tech. Phys. |
34 |
195-199 |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
Wide-band highspeed Nb and YBaCuO detectors |
1991 |
IEEE Trans. Magn. |
27 |
2836-2839 |
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Electron-phonon interaction in ultrathin Nb films |
1990 |
Sov. Phys. JETP |
70 |
505-511 |
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Tunnel field-effect transistors for sensitive terahertz detection |
2021 |
Nat. Commun. |
12 |
543 |
Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
2015 |
J. Appl. Phys. |
118 |
194303 |
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Towards to the development of THz detectors based on carbon nanostructures |
2018 |
J. Phys.: Conf. Ser. |
1092 |
012039 (1 to 4) |
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
2018 |
Materials Today: Proc. |
5 |
27301-27306 |
Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. |
Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation |
2016 |
J. Phys.: Conf. Ser. |
741 |
012143 (1 to 6) |