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Author (down) Heslinga, D. R.; Shafranjuk, S. E.; van Kempen, H.; Klapwijk, T. M. url  doi
openurl 
  Title Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy Type Journal Article
  Year 1994 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 49 Issue 15 Pages 10484-10494  
  Keywords Nb, Si, Nb-Si, Nb/Si, Si/Nb, Andreev reflection, point-contact spectroscopy  
  Abstract Andreev reflection point-contact spectroscopy is performed on a bilayer consisting of 50-nm degenerately doped Si backed with Nb. Due to the short mean free path both injection into and transport across the Si layer are diffusive, in contrast to the ballistic conditions prevailing in clean metal layers. Nevertheless a large Andreev signal is observed in the point-contact characteristics, not reduced by elastic scattering in the Si layer or by interface scattering, but only limited by the transmission coefficient of the metal-semiconductor point contact. Two peaks in the Andreev reflection probability are visible, marking the values of the superconducting energy gap at the interface on the Nb and Si sides. This interpretation is supported by a method of solving the Bogolubov equations analytically using a simplified expression for the variation of the order parameter close to the interface. This observation enables a comparison with theoretical predictions of the gap discontinuity in the proximity effect. It is found that the widely used de Gennes model does not agree with the experimental data.  
  Address  
  Corporate Author Thesis  
  Publisher American Physical Society Place of Publication Editor  
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  Notes Approved no  
  Call Number Serial 1005  
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Author (down) Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. url  doi
openurl 
  Title Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films Type Journal Article
  Year 2013 Publication Phys. Rev. B Abbreviated Journal  
  Volume 88 Issue 18 Pages 180505 (1 to 5)  
  Keywords strongly disordered superconducting TiN films, microwave resonators  
  Abstract We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties.  
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  Notes Approved no  
  Call Number Serial 1069  
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Author (down) Cooper, L. N. openurl 
  Title Bound electron pairs in a degenerate fermi gas Type Journal Article
  Year 1956 Publication Phys. Rev. Abbreviated Journal Phys. Rev.  
  Volume 104 Issue 4 Pages 1189-1190  
  Keywords BCS  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 899  
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Author (down) Ciulin, V.; Carter, S. G.; Sherwin, M. S. url  doi
openurl 
  Title Terahertz optical mixing in biased GaAs single quantum wells Type Journal Article
  Year 2004 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 70 Issue 11 Pages 115312-(1-6)  
  Keywords optical mixing  
  Abstract  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1098-0121 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 501  
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Author (down) Callen, Herbert. B.; Welton, Theodore A. doi  openurl
  Title Irreversibility and generalized noise Type Journal Article
  Year 1951 Publication Phys. Rev. Abbreviated Journal  
  Volume 83 Issue 1 Pages 34-40  
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  Address  
  Corporate Author Thesis  
  Publisher American Physical Society Place of Publication Editor  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 214  
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