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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl. Phys. Lett., 84(11), 1958–1960.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Baselmans, J. J. A., Baryshev, A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in small volume hot electron bolometer mixers. Appl. Phys. Lett., 86(16), 163503 (1 to 3).
Abstract: We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems.
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Bandurin, D. A., Svintsov, D., Gayduchenko, I., Xu, S. G., Principi, A., Moskotin, M., et al. (2018). Resonant terahertz detection using graphene plasmons. Nat. Commun., 9, 5392 (1 to 8).
Abstract: Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
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Bandurin, D. A., Gayduchenko, I., Cao, Y., Moskotin, M., Principi, A., Grigorieva, I. V., et al. (2018). Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors. Appl. Phys. Lett., 112(14), 141101 (1 to 5).
Abstract: Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.
D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Baksheeva, K., Ozhegov, R., Goltsman, G., Kinev, N., Koshelets, V., Kochnev, A., et al. (2021). The sub THz emission of the human body under physiological stress. IEEE Trans. Terahertz Sci. Technol., .
Abstract: We present evidence that in the sub-THz frequency band, human skin can be considered as an electromagnetic bio-metamaterial, in that its natural emission is a product of skin tissue geometry and embedded structures. Radiometry was performed on 32 human subjects from 480 to 700 GHz. Concurrently, the subjects were exposed to stress, while heart pulse rate (PS) and galvanic skin response (GSR) were also measured. The results are substantially different from the expected black body radiation signal of the skin surface. PS and GSR correlate to the emissivity. Using a simulation model for the skin, we find that the sweat duct is a critical element. The simulated frequency spectra qualitatively match the measured emission spectra and show that our sub-THz emission is modulated by our level of mental stress. This opens avenues for the remote monitoring of the human state.
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Baeva, E. M., Titova, N. A., Veyrat, L., Sacépé, B., Semenov, A. V., Goltsman, G. N., et al. (2021). Thermal relaxation in metal films limited by diffuson lattice excitations of amorphous substrates. Phys. Rev. Applied, 15(5), 054014.
Abstract: We examine the role of a silicon-based amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The samples studied consist of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry is used to measure the electron temperature Te of the films as a function of Joule power per unit area P2D. In all samples, we observe a P2D∝Tne dependence, with exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear temperature dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for a phonon mean free path shorter than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics.
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Baeva, E. M., Titova, N. A., Kardakova, A. I., Piatrusha, S. U., & Khrapai, V. S. (2020). Universal bottleneck for thermal relaxation in disordered metallic films. Jetp Lett., 111(2), 104–108.
Abstract: We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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Baeva, E. M., Sidorova, M. V., Korneev, A. A., Smirnov, K. V., Divochy, A. V., Morozov, P. V., et al. (2018). Thermal properties of NbN single-photon detectors. Phys. Rev. Applied, 10(6), 064063 (1 to 8).
Abstract: We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices.
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Arutyunov, K. Y., Ramos-Alvarez, A., Semenov, A. V., Korneeva, Y. P., An, P. P., Korneev, A. A., et al. (2016). Superconductivity in highly disordered NbN nanowires. Nanotechnol., 27(47), 47lt02 (1 to 8).
Abstract: The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.
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Antipov, S., Trifonov, A., Krause, S., Meledin, D., Kaurova, N., Rudzinski, M., et al. (2019). Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer. Supercond. Sci. Technol., 32(7), 075003.
Abstract: We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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