Abstract: High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency.

Abstract: In the same way that micro-mechanical resonators resemble guitar strings and drums, surface acoustic waves resemble the sound these instruments produce, but moving over a solid surface rather than through air. In contrast with oscillations in suspended resonators, such propagating mechanical waves have not before been studied near the quantum mechanical limits. Here, we demonstrate local probing of surface acoustic waves with a displacement sensitivity of 30amRMSHz-1/2 and detection sensitivity on the single-phonon level after averaging, at a frequency of 932MHz. Our probe is a piezoelectrically coupled single-electron transistor, which is sufficiently fast, non-destructive and localized to enable us to track pulses echoing back and forth in a long acoustic cavity, self-interfering and ringing the cavity up and down. We project that strong coupling to quantum circuits will enable new experiments, and hybrids using the unique features of surface acoustic waves. Prospects include quantum investigations of phonon-phonon interactions, and acoustic coupling to superconducting qubits for which we present favourable estimates.

Abstract: Quantum control of individual spins in condensed-matter systems is an emerging field with wide-ranging applications in spintronics, quantum computation and sensitive magnetometry. Recent experiments have demonstrated the ability to address and manipulate single electron spins through either optical or electrical techniques. However, it is a challenge to extend individual-spin control to nanometre-scale multi-electron systems, as individual spins are often irresolvable with existing methods. Here we demonstrate that coherent individual-spin control can be achieved with few- nanometre resolution for proximal electron spins by carrying out single-spin magnetic resonance imaging (MRI), which is realized using a scanning-magnetic-field gradient that is both strong enough to achieve nanometre spatial resolution and sufficiently stable for coherent spin manipulations. We apply this scanning-field-gradient MRI technique to electronic spins in nitrogen-vacancy (NV) centres in diamond and achieve nanometre resolution in imaging, characterization and manipulation of individual spins. For NV centres, our results in individual-spin control demonstrate an improvement of nearly two orders of magnitude in spatial resolution when compared with conventional optical diffraction-limited techniques. This scanning-field-gradient microscope enables a wide range of applications including materials characterization, spin entanglement and nanoscale magnetometry.

Abstract: Semiconductor quantum dots are potential sources for generating polarization-entangled photons efficiently. The main prerequisite for such generation based on biexciton-exciton cascaded emission is to control the exciton fine-structure splitting. Among various techniques investigated for this purpose, an electric field is a promising means to facilitate the integration into optoelectronic devices. Here we demonstrate the generation of polarization-entangled photons from single GaAs quantum dots by an electric field. In contrast to previous studies, which were limited to In(Ga)As quantum dots, GaAs island quantum dots formed by a thickness fluctuation were used because they exhibit a larger oscillator strength and emit light with a shorter wavelength. A forward voltage was applied to a Schottky diode to control the fine-structure splitting. We observed a decrease and suppression in the fine-structure splitting of the studied single quantum dot with the field, which enabled us to generate polarization-entangled photons with a high fidelity of 0.72 ± 0.05.