| Records |
Author  |
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
| Title |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
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Journal Article |
| Year |
1976 |
Publication |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
Abbreviated Journal |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume |
10 |
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1379-1383 |
| Keywords |
Ge, cyclotron resonance, charged impurities, |
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1772 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. |
| Title |
Picosecond response of YBaCuO films to electromagnetic radiation |
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Conference Article |
| Year |
1990 |
Publication |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
Abbreviated Journal |
Proc. European Conf. High-Tc Thin Films and Single Crystals |
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457-462 |
| Keywords |
YBCO HTS detectors |
| Abstract |
Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized. |
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Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H. |
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European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989 |
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1695 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
| Title |
Mechanism of picosecond response of granular YBaCuO films to electromagnetic radiation |
Type |
Journal Article |
| Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
| Volume |
27 |
Issue |
2 |
Pages |
1321-1324 |
| Keywords |
YBCO HTS detectors |
| Abstract |
Ultrafast mechanisms of radiation detection in granular YBaCuO films are studied in the wide wavelength range from millimeter waves to near infrared. With an increase in radiation frequency, the Josephson detection at the grain-boundary weak links is replaced by electron heating into the grains. This change occurs in the submillimeter wavelength range. The electron-phonon relaxation time tau /sub eph/ is determined from direct measurements, quasi-stationary electron heating measurements, and the frequency dependence of the current at which maximum voltage shift is observed. The temperature dependence of tau /sub eph/ at T<or=40 K was found to be tau /sub eph/ approximately T/sup -1/. The results show that detectors with a response time of a few picoseconds at nitrogen temperature are attainable. |
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1941-0069 |
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1679 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
| Title |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
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Journal Article |
| Year |
1991 |
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IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
| Volume |
27 |
Issue |
2 |
Pages |
1317-1320 |
| Keywords |
YBCO, HTS, Nb HEB mixers |
| Abstract |
A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
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1941-0069 |
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1681 |
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| Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Dzardanov, A. L.; Zorin, M. A. |
| Title |
Ultrafast superconductive switch |
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Journal Article |
| Year |
1991 |
Publication |
IEEE Trans. Magn. |
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IEEE Trans. Magn. |
| Volume |
27 |
Issue |
2 |
Pages |
2844-2846 |
| Keywords |
Nb superconducting switch |
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The transition from superconductive to resistive state caused by infrared radiation and bias current pulses was investigated in order to minimize switching time tau and driving power W. Experimental results for Nb microstrips confirm the correctness of calculations based on the model of electron heating. For Nb switches, tau measured directly is 0.3-0.8 ns for radiation pulses and 1-3 ns for bias current pulses at T=4.2 K, while for YBaCuO switches at T=77 K it is expected to be several picoseconds. For an YBaCuO sample with the dimensions of 5*2*0.15 mu m/sup 2/, W was 10 mW, and it can be further reduced to the order of several microwatts by decreasing the volume of the sample. |
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1941-0069 |
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1680 |
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| Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
| Title |
Germanium hot-electron narrow-band detector |
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Journal Article |
| Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
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Sov. Radio Engineering And Electronic Physics |
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16 |
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8 |
Pages |
1346 |
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Ge HEB detectors |
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Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
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1741 |
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Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
| Title |
Investigation of excited donor states in GaAs |
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Journal Article |
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1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
| Volume |
7 |
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10 |
Pages |
1248-1250 |
| Keywords |
GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
| Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
| Year |
1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
| Title |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
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Journal Article |
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1982 |
Publication |
Optics and Spectroscopy |
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Optics and Spectroscopy |
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52 |
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4 |
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454-455 |
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Ge, exciton photoconduction |
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1715 |
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Gershenzon, E. M.; Goltsman, G. N. |
| Title |
Zeeman effect in excited-states of donors in germanium |
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Journal Article |
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1972 |
Publication |
Sov. Phys. Semicond. |
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Sov. Phys. Semicond. |
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6 |
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3 |
Pages |
509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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