|
|
Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
|
|
|
|
Verevkin, A. A., Pearlman, A., Slysz, W., Zhang, J., Sobolewski, R., Chulkova, G., et al. (2003). Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications. In E. Donkor, A. R. Pirich, & H. E. Brandt (Eds.), Proc. SPIE (Vol. 5105, pp. 160–170). SPIE.
Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
|
|
|
|
Venediktov, I. O., Elezov, M. S., Prokhodtsov, A. I., Kovalyuk, V. V., An, P. P., Golikov, A. D., et al. (2020). Study of microheater’s phase modulation for on-chip Kennedy receiver. In J. Phys.: Conf. Ser. (Vol. 1695, 012117).
Abstract: In this work we describe phase modulators for several Mach-Zehnder interferometers (MZI) on silicon nitride platform for telecomm wavelength (1550 nm). We obtained current-voltage and phase-voltage curves for these modulators. MZI are needed for experimental realisation of various quantum receivers that can distinguish weak coherent states of light with extremely low error. Thermo-optical (TO) modulation is ensured by microheaters on one of the arms of MZI, which enables the change of the refractive index of the material with temperature. This approach allows to apply the necessary voltage to the golden microheaters to obtain the required phase change. For the on-chip microheaters we demonstrate the dependence of the phase shift on the voltage applied to our on-chip microheaters.
|
|
|
|
Vasilev, D. D., Malevannaya, E. I., Moiseev, K. M., Zolotov, P. I., Antipov, A. V., Vakhtomin, Y. B., et al. (2020). Influence of deposited material energy on superconducting properties of the WSi films. In IOP Conf. Ser.: Mater. Sci. Eng. (Vol. 781, 012013 (1 to 6)).
Abstract: WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A.
|
|
|
|
Vahtomin, Y. B., Finkel, M. I., Antipov, S. V., Voronov, B. M., Smirnov, K. V., Kaurova, N. S., et al. (2002). Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 259–270). Cambridge, MA, USA.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
|
|
|
|
Vachtomin, Y. B., Antipov, S. V., Kaurova, N. S., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., et al. (2004). Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess. In Proc. 29th IRMMW / 12th THz (pp. 329–330). Karlsruhe, Germany.
Abstract: We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
|
|
|
|
Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Zhang, W., et al. (2006). Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 688–689).
Abstract: Presented in this paper are the performances of HEB mixers based on 2-3.5 nm thick NbN films integrated with log-periodic spiral antenna. Double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. Mixer gain bandwidth is 5.2 GHz. Local oscillator power is 1-3 muW for mixers with different active area
|
|
|
|
Vachtomin, Y. B., Antipov, S. V., Maslennikov, S. N., Smirnov, K. V., Polyakov, S. L., Kaurova, N. S., et al. (2004). Noise temperature measurements of NbN phonon-cooled hot electron bolometer mixer at 2.5 and 3.8 THz. In Proc. 15th Int. Symp. Space Terahertz Technol. (pp. 236–241). Northampton, Massachusetts, USA.
Abstract: We present the results of noise temperature measurements of NbN phonon-cooled HEB mixers based on a 3.5 nm NbN film deposited on a high-resistivity Si substrate with a 200 nm – thick MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 µm x 0.2 µm active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. We also present the results of direct detection contribution to the measured Y-factor and of a possible error of noise temperature calculation. This error was more than 8% for the mixer with in-plane dimensions of 2.4 x 0.16 µm 2 at the optimal noise temperature point. The use of a mesh filter enabled us to avoid the effect of direct detection and decrease optical losses by 0.5 dB. The paper is concluded by the investigation results of the mixer polarization response. It was shown that the polarization can differ from the circular one at 3.8 THz by more than 2 dB.
|
|
|
|
Trifonov, V. A., Karasik, B. S., Zorin, M. A., Gol'tsman, G. N., Gershenzon, E. M., Lindgren, M., et al. (1996). 9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 337–348).
Abstract: Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
|
|
|
|
Trifonov, A., Tong, C. E., Lobanov, Y., Kaurova, N., Blundell, R., & Gol’tsman, G. (2015). An investigation of the DC and IF performance of silicon-membrane HEB mixer elements. In Proc. 26th Int. Symp. Space Terahertz Technol. (40).
Abstract: We report on our initial development towards a 2x2 multi-pixel HEB waveguide mixer for operation at 1.4 THz. We have successfully fabricated devices comprising an NbN bridge integrated with antenna test structure using a silicon membrane as the supporting substrate. DC measurements of the test chips demonstrate critical current from 0.1 – 1mA depending on the size of device, with T c of around 10 K and ΔTc ~ 0.8 K.
|
|
