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Fedder, H.; Oesterwind, S.; Wick, M.; Olbrich, F.; Michler, P.; Veigel, T.; Berroth, M.; Schlagmüller, M. | ||||
| Title | Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz | Type | Conference Article | ||
| Year | 2018 | Publication | ECOC | Abbreviated Journal | |
| Volume | Issue | Pages | 1-3 | ||
| Keywords | SSPD, SNSPD, SPAD | ||||
| Abstract | We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 8535415 | Serial | 1198 | ||
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| Author |
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. | ||||
| Title | Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation | Type | Journal Article | ||
| Year | 2021 | Publication | Adv. Electron. Mater. | Abbreviated Journal | Adv. Electron. Mater. |
| Volume | 7 | Issue | 3 | Pages | 2000872 |
| Keywords | SWCNT transistors | ||||
| Abstract | The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer-scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single-walled carbon nanotube (SWCNT) optoelectronic properties through localized two-photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field-effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two-photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT-based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications. | ||||
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| ISSN | 2199-160X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1843 | |||
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory | ||||
| Title | Integrated contra-directional coupler for NV-centers photon filtering | Type | Conference Article | ||
| Year | 2020 | Publication | Proc. 32-nd EMSS | Abbreviated Journal | Proc. 32-nd EMSS |
| Volume | Issue | Pages | 354-360 | ||
| Keywords | NV-centers, nanodiamonds, quantum photonic integrated circuits, contra-direction coupler, Bragg gratings | ||||
| Abstract | We modelled an integrated optical contra-directional coupler on silicon nitride platform. Performance of the filter was studied depending on different parameters, including the grating period and the height of teeth of the Bragg grating near 637 nm operation wavelength. The obtained results can be used for a design and fabrication of quantum photonic integrated circuits with on-chip single-photon NV-centers in nanodiamonds. | ||||
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| ISSN | 2724-0029 | ISBN | 978-88-85741-44-7 | Medium | |
| Area | Expedition | Conference | 32nd European Modeling & Simulation Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1839 | |||
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| Author |
Elmanov, Ilia; Elmanova, Anna; Kovalyuk, Vadim; An, Pavel; Goltsman, Gregory | ||||
| Title | Silicon nitride photonic crystal cavity coupled with NV-centers in nanodiamonds | Type | Conference Article | ||
| Year | 2020 | Publication | Proc. 32-nd EMSS | Abbreviated Journal | Proc. 32-nd EMSS |
| Volume | Issue | Pages | 344-348 | ||
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| Abstract | The development of integrated quantum photonics requires a high efficient excitation and coupling of a single photon source with on-chip devices. In this paper, we show our results of modelling for high-Q photonic crystal cavity, optimized for zero phonon line emission of NV-centers in nanodiamonds. Modelling was performed for the silicon nitride platform and obtained a quality factor equals to 6136 at 637 nm wavelength. | ||||
| Address | NV-centers, nanodiamonds | ||||
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| ISSN | 2724-0029 | ISBN | 978-88-85741-44-7 | Medium | |
| Area | Expedition | Conference | 32nd European Modeling & Simulation Symposium | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1840 | |||
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| Author |
Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V. | ||||
| Title | Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system | Type | Conference Article | ||
| Year | 2017 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 132 | Issue | 2 | Pages | 2 |
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| Abstract | Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor†in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched†in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1116 | ||
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