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| Author | Ryabchun, S. A.; Tretyakov, I. V.; Finkel, M. I.; Maslennikov, S. N.; Kaurova, N. S.; Seleznev, V. A.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title | Fabrication and characterisation of NbN HEB mixers with in situ gold contacts | Type | Conference Article | ||
| Year | 2008 | Publication | Proc. 19th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 19th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 62-67 | ||
| Keywords | HEB, mixer, NbN, in-situ contacts | ||||
| Abstract | We present our recent results of the fabrication and testing of NbN hot-electron bolometer mixers with in situ gold contacts. An intermediate frequency bandwidth of about 6 GHz has been measured for the mixers made of a 3.5-nm NbN film on a plane Si substrate with in situ gold contacts, compared to 3.5 GHz for devices made of the same film with ex situ gold contacts. The increase in the intermediate frequency bandwidth is attributed to additional diffusion cooling through the improved contacts, which is further supported by the its dependence on the bridge length: intermediate frequency bandwidths of 3.5 GHz and 6 GHz have been measured for devices with lengths of 0.35 μm and 0.16 μm respectively at a local oscillator frequency of 300 GHz near the superconducting transition. At a local oscillator frequency of 2.5 THz the receiver has offered a DSB noise temperature of 950 K. When compared to the previous result of 1300 K obtained at the same local oscillator frequency for devices fabricated with an ex situ route, such a low value of the noise temperature may also be attributed to the improved gold contacts. | ||||
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| Publisher | Place of Publication | Groningen, Netherlands | Editor | ||
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| Notes | Approved | no | |||
Call Number  |
Serial | 412 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristic of fast superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys.-Tech. Phys. | Abbreviated Journal | Sov. Phys.-Tech. Phys. |
| Volume | 34 | Issue | Pages | 195-199 | |
| Keywords | HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
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| Notes | О предельных характеристиках быстродействующих серхпроводниковых болометров | Approved | no | ||
| Call Number |
Serial | 237 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Wide-band highspeed Nb and YBaCuO detectors | Type | Journal Article | ||
| Year | 1991 | Publication | IEEE Trans. Magn. | Abbreviated Journal | IEEE Trans. Magn. |
| Volume | 27 | Issue | 2 | Pages | 2836-2839 |
| Keywords | YBCO, HTS, Nb detectors | ||||
| Abstract | The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation. | ||||
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| ISSN | 0018-9464 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number |
Serial | 239 | |||
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| Author | Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Electron-phonon interaction in ultrathin Nb films | Type | Journal Article | ||
| Year | 1990 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 70 | Issue | 3 | Pages | 505-511 |
| Keywords | Nb films | ||||
| Abstract | A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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| Notes | Approved | no | |||
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Serial | 241 | |||
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| Author | Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. | ||||
| Title | Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz | Type | Conference Article | ||
| Year | 2004 | Publication | Proc. 5-th MSMW | Abbreviated Journal | Proc. 5-th MSMW |
| Volume | 2 | Issue | Pages | 592-594 | |
| Keywords | NbN HEB mixers | ||||
| Abstract | To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz. | ||||
| Address | Kharkov, Ukraine | ||||
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| Publisher | Place of Publication | Kharkov, Ukraine | Editor | ||
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| Area | Expedition | Conference | The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) | ||
| Notes | Approved | no | |||
| Call Number |
Serial | 351 | |||
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| Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. | ||||
| Title | Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements | Type | Journal Article | ||
| Year | 2011 | Publication | Semicond. Sci. Technol. | Abbreviated Journal | Semicond. Sci. Technol. |
| Volume | 26 | Issue | 2 | Pages | 025013 |
| Keywords | AlGaAs/GaAs heterojunctions | ||||
| Abstract | We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas. | ||||
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| ISSN | 0268-1242 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number |
Serial | 1215 | |||
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| Author | Rath, P.; Vetter, A.; Kovalyuk, V.; Ferrari, S.; Kahl, O.; Nebel, C.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Travelling-wave single-photon detectors integrated with diamond photonic circuits: operation at visible and telecom wavelengths with a timing jitter down to 23 ps | Type | Conference Article | ||
| Year | 2016 | Publication | Integrated Optics: Devices, Mat. Technol. XX | Abbreviated Journal | Integrated Optics: Devices, Mat. Technol. XX |
| Volume | 9750 | Issue | Pages | 135-142 | |
| Keywords | SSPD, Superconducting Nanowire Single-Photon Detector, SNSPD, Single Photon Detector, Diamond Photonics, Diamond Integrated Optics, Diamond Waveguides, Integrated Optics, Low Timing Jitter | ||||
| Abstract | We report on the design, fabrication and measurement of travelling-wave superconducting nanowire single-photon detectors (SNSPDs) integrated with polycrystalline diamond photonic circuits. We analyze their performance both in the near-infrared wavelength regime around 1600 nm and at 765 nm. Near-IR detection is important for compatibility with the telecommunication infrastructure, while operation in the visible wavelength range is relevant for compatibility with the emission line of silicon vacancy centers in diamond which can be used as efficient single-photon sources. Our detectors feature high critical currents (up to 31 μA) and high performance in terms of efficiency (up to 74% at 765 nm), noise-equivalent power (down to 4.4×10-19 W/Hz1/2 at 765 nm) and timing jitter (down to 23 ps). | ||||
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| Publisher | Spie | Place of Publication | Editor | Broquin, J.-E.; Conti, G.N. | |
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| Notes | Approved | no | |||
| Call Number |
Serial | 1210 | |||
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| Author | Pernice, W.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G. N.; Sergienko, A. V.; Tang, H. X. | ||||
| Title | High speed and high efficiency travelling wave single-photon detectors embedded in nanophotonic circuits | Type | Miscellaneous | ||
| Year | 2012 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | 1108.5299 | Issue | Pages | 1-23 | |
| Keywords | optical waveguides, waveguide SSPD, guantum photonics, jitter, detection efficiency | ||||
| Abstract | Ultrafast, high quantum efficiency single photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. High photon detection efficiency is essential for scalable measurement-based quantum computation, quantum key distribution, and loophole-free Bell experiments. However, imperfect modal matching and finite photon absorption rates have usually limited the maximum attainable detection efficiency of single photon detectors. Here we demonstrate a superconducting nanowire detector atop nanophotonic waveguides which allows us to drastically increase the absorption length for incoming photons. When operating the detectors close to the critical current we achieve high on-chip single photon detection efficiency up to 91% at telecom wavelengths, with uncertainty dictated by the variation of the waveguide photon flux. We also observe remarkably low dark count rates without significant compromise of detection efficiency. Furthermore, our detectors are fully embedded in a scalable silicon photonic circuit and provide ultrashort timing jitter of 18ps. Exploiting this high temporal resolution we demonstrate ballistic photon transport in silicon ring resonators. The direct implementation of such a detector with high quantum efficiency, high detection speed and low jitter time on chip overcomes a major barrier in integrated quantum photonics. | ||||
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| Notes | Approved | no | |||
| Call Number |
Serial | 845 | |||
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| Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
| Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
| Year | 2015 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 106 | Issue | 15 | Pages | 151101 (1 to 5) |
| Keywords | SSPD, SNSPD | ||||
| Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number |
Serial | 1211 | |||
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| Author | Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. | ||||
| Title | Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves | Type | Conference Article | ||
| Year | 1986 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 50 | Issue | Pages | 280-281 | |
| Keywords | Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| ISSN | 0367-6755 | ISBN | Medium | ||
| Area | Expedition | Conference | 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 | ||
| Notes | Approved | no | |||
| Call Number |
Serial | 1708 | |||
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| Author | Gershenzon, E. M.; Goltsman, G. N. | ||||
| Title | Zeeman effect in excited-states of donors in germanium | Type | Journal Article | ||
| Year | 1972 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 6 | Issue | 3 | Pages | 509 |
| Keywords | Ge, donors, Zeeman effect | ||||
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| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
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Serial | 1737 | |||
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| Author | Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. | ||||
| Title | Terahertz imaging system based on superconducting heterodyne integrated receiver | Type | Conference Article | ||
| Year | 2014 | Publication | Proc. THz and Security Applications | Abbreviated Journal | Proc. THz and Security Applications |
| Volume | Issue | Pages | 113-125 | ||
| Keywords | SIS mixer, SIR, THz imaging | ||||
| Abstract | The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems. In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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| Publisher | Springer Netherlands | Place of Publication | Dordrecht | Editor | Corsi, C.; Sizov, F. |
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| ISSN | 978-94-017-8828-1 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number |
Serial | 1368 | |||
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| Author | Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Temperature dependence of the receiver noise temperature and IF bandwidth of superconducting hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2014 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 27 | Issue | 8 | Pages | 085013 (1 to 5) |
| Keywords | NbN HEB mixers | ||||
| Abstract | In this paper we study the temperature dependence of the receiver noise temperature and IF noise bandwidth of superconducting hot electron bolometer (HEB) mixers. Three superconducting NbN HEB devices of different transition temperatures (Tc) are measured at 0.85 THz and 1.4 THz at different bath temperatures (Tbath) between 4 K and 9 K. Measurement results demonstrate that the receiver noise temperature of superconducting NbN HEB devices is nearly constant for Tbath/Tc, less than 0.8, which is consistent with the simulation based on a distributed hot-spot model. In addition, the IF noise bandwidth appears independent of Tbath/Tc, indicating the dominance of phonon cooling in the investigated HEB devices. | ||||
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| ISSN | 0953-2048 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number |
Serial | 1358 | |||
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| Author | Zhang, W.; Miao, W.; Yao, Q. J.; Lin, Z. H.; Shi, S. C.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Spectral response and noise temperature of a 2.5 THz spiral antenna coupled NbN HEB mixer | Type | Journal Article | ||
| Year | 2012 | Publication | Phys. Procedia | Abbreviated Journal | Phys. Procedia |
| Volume | 36 | Issue | Pages | 334-337 | |
| Keywords | NbN HEB mixer | ||||
| Abstract | We report on a 2.5 THz spiral antenna coupled NbN hot electron bolometer (HEB) mixers, fabricated with in-situ process. The receiver noise temperature with lowest value of 1180 K is in good agreement with calculated quantum efficiency factor as a function of bias voltage. In addition, the measured spectral response of the spiral antenna coupled NbN HEB mixer shows broad frequency coverage of 0.8-3 THz, and corrected response for optical losses, FTS, and coupling efficiency between antenna and bolometer falls with frequency due to diffraction-limited beam of lens/antenna combination. | ||||
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| ISSN | 1875-3892 | ISBN | Medium | ||
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| Notes | Approved | no | |||
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Serial | 1381 | |||
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| Author | Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. | ||||
| Title | Superconducting diamond films as perspective material for direct THz detectors | Type | Abstract | ||
| Year | 2017 | Publication | Proc. 28th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 28th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 82 | ||
| Keywords | KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP | ||||
| Abstract | Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. | ||||
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Serial | 1173 | |||
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