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Author | Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. | ||||
Title | The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer | Type | Journal Article | ||
Year | 2003 | Publication | J. of communications technol. & electronics | Abbreviated Journal | J. of communications technol. & electronics |
Volume | 48 | Issue | 6 | Pages | 671-675 |
Keywords | NbN HEB mixers | ||||
Abstract | Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. | ||||
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Publisher | MAIK Nauka/Interperiodica, Birmingham, AL | Place of Publication | Editor | ||
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ISSN | 1064-2269 | ISBN | Medium | ||
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Notes | https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) | Approved | no | ||
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Vakhtomin2003 | Serial | 1522 | ||
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Author | Смирнов, Константин Владимирович; Вахтомин, Юрий Борисович; Смирнов, Андрей Владимирович; Ожегов, Роман Викторович; Пентин, Иван Викторович; Дивочий, Александр Валерьевич; Сливинская, Елизавета Вячеславовна; Гольцман, Григорий Наумович | ||||
Title | Приемники терагерцового и инфракрасного диапазонов, основанные на тонкопленочных сверхпроводниковых наноструктурах | Type | Journal Article | ||
Year | 2010 | Publication | Вестник НГУ. Серия: Физика | Abbreviated Journal | Вестник НГУ. Серия: Физика |
Volume | 5 | Issue | 4 | Pages | |
Keywords | HEB, SSPD, SNSPD | ||||
Abstract | В работе представлены результаты разработки и создания чувствительных и ультрабыстрых приемников, основанных на тонкопленочных сверхпроводниковых наноструктурах: болометрах на эффекте электронного разогрева (HEB – hot-electron bolometer) и детекторах одиночных фотонов видимого и инфракрасного диапазонов волн (SSPD – superconducting singe-photon detector). Представлены основные принципы работы сверхпроводниковых устройств, технология создания и конструкционные особенности приемников, их основные типы и характеристики. Достигнутые рекордные значения параметров приемных систем позволяют использовать созданные приборы при решении различных научно-исследовательских задач в ближнем, среднем и дальнем ИК диапазонах волн. This work presents the results of the development and fabrication of sensitive and ultrafast detectorsbased on thin film superconducting nanostructures: hot-electron bolometers (HEBs) and visible and infrared superconducting singe photon detectors (SSPDs). The main operational principles of the superconducting devices are presentedas well as the technology of fabrication of the detectors and their main types and parameters. The achieved record parameters of the detectors allow application of the fabricated devices to solution of various research problems in the near, middle and far IR ranges. |
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Publisher | Новосибирский государственный университет | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Физика | Abbreviated Series Title | ||
Series Volume | Series Issue | Edition | |||
ISSN | 1818-7994 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | УДК 538.9 | Approved | no | ||
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RPLAB @ sasha @ смирнов2010приемники | Serial | 1033 | ||
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Author | Korneev, A. A.; Divochiy, A. V.; Vakhtomin, Yu. B.; Korneeva, Yu. P.; Larionov, P. A.; Manova, N. N.; Florya, I. N.; Trifonov, A. V.; Voronov, B. M.; Smirnov, K. V.; Semenov, A. V.; Chulkova, G. M.; Goltsman, G. N. | ||||
Title | IR single-photon receiver based on ultrathin NbN superconducting film | Type | Journal Article | ||
Year | 2013 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
Volume | Issue | 5 | Pages | ||
Keywords | SSPD, SNSPD | ||||
Abstract | We present our recent results in research and development of superconducting single-photon detector (SSPD). We achieved the following performance improvement: first, we developed and characterized SSPD integrated in optical cavity and enabling its illumination from the face side, not through the substrate, second, we improved the quantum efficiency of the SSPD at around 3 μm wavelength by reduction of the strip width to 40 nm, and, finally, we improved the detection efficiency of the SSPD-based single-photon receiver system up to 20% at 1550 nm and extended its wavelength range beyond 1800 nm by the usage of the fluoride ZBLAN fibres. | ||||
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Language | Russian | Summary Language | Original Title | ||
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Notes | 8 pages | Approved | no | ||
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RPLAB @ sasha @ korneevir | Serial | 1043 | ||
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Author | Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Paine, Scot.t. N.; Patt, Ferdinand; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene | ||||
Title | Superconductive hot-electron bolometer mixer receiver for 800 GHz operation | Type | Miscellaneous | ||
Year | 2000 | Publication | IEEE Trans. Microwave Theory and Techniques | Abbreviated Journal | IEEE Trans. Microwave Theory and Techniques |
Volume | 48 | Issue | 4 | Pages | 683-689 |
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Notes | Approved | no | |||
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RPLAB @ s @ Kawamura_superconductivehot-electron | Serial | 424 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
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RPLAB @ kovalyuk @ | Serial | 1111 | ||
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