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Author Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G.
Title Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers Type Journal Article
Year 1998 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 72 Issue 12 Pages 1516-1518
Keywords HEB mixer; thermal fluctuation noise; TFN
Abstract A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band).
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Call Number (down) RPLAB @ gujma @ Serial 760
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Author Maslennikov, S.
Title RF heating efficiency of the terahertz superconducting hot-electron bolometer Type Journal Article
Year 2014 Publication arXiv Abbreviated Journal arXiv
Volume 1404.5276 Issue Pages 1-4
Keywords superconducting hot-electron bolometer mixer, HEB, NbN, distributed model, HEB model, HEB mixer model, heat balance equa-tions, conversion gain, RF heating efficiency, noise temperature, simulation, Euler method
Abstract We report results of the numerical solution by the Euler method of the system of heat balance equations written in recurrent form for the superconducting hot-electron bolometer (HEB) embedded in an electrical circuit. By taking into account the dependence of the HEB resistance on the transport current we have been able to calculate rigorously the RF heating efficiency, absorbed local oscillator (LO) power and conversion gain of the HEB mixer. We show that the calculated conversion gai nis in excellent agreement with the experimental results, and that the substitution of the calculated RF heating efficiency and absorbed LO power into the expressions for the conversion gain and noise temperature given by the analytical small-signal model of the HEB yields excellent agreement with the corresponding measured values
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Call Number (down) RPLAB @ atomics90 @ Serial 954
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Author Skalare, A.; McGrath, William R.; Echternach, P. M.; Leduc, H. G.; Siddiqi, I.; Verevkin, A.; Prober, D. E.
Title Aluminum hot-electron bolometer mixers at submillimeter wavelengths Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 11 Issue 1 Pages 641-644
Keywords Al HEB mixer, contacts, interface, in situ, in-situ, Aluminium HEB mixer
Abstract Diffusion-cooled aluminum hot-electron bolometer (HEB) mixers are of interest for low-noise high resolution THz-frequency spectroscopy within astrophysics. Al HEB mixers offer operation with an order of magnitude less local oscillator power, higher intermediate frequency bandwidth and potentially lower noise than competing devices made from other materials. We report on mixer experiments at 618 GHz with devices fabricated from films with sheet resistances in the range from about 55 Ω down to about 9 Ω per square. Intermediate frequency bandwidths of up to 3 GHz were measured (1 μm long device), with absorbed local oscillator power levels of 0.5 to 6 nW and mixer conversion up to -21.5 dB. High input coupling efficiency implies that the electrons in the device are able to thermalize before escaping from the device. It was found that the long coherence length complicates mixer operations due to the proximity of the contact pads. Also, saturation at the IF frequency may be a concern for this type of device, and warrants further studies.
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ISSN 1051-8223 ISBN Medium
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Call Number (down) ref919426b Serial 1061
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Author Chavarr'ıa, L.; Herpin, F.; Jacq, T.; Braine, J.; Bontemps, S.; Baudry, A.; Marseille, M.; van der Tak, F.; Pietropaoli, B.; Wyrowski, F.; Shipman, R.; Frieswijk, W.; van Dishoeck, E. F.; Cernicharo, J.; Bachiller, R.; Benedettini, M.; Benz, A. O.; Bergin, E.; Bjerkeli, P.; Blake, G. A.; Bruderer, S.; Caselli, P.; Codella, C.; Daniel, F.; di Giorgio, A. M.; Dominik, C.; Doty, S. D.; Encrenaz, P.; Fich, M.; Fuente, A.; Giannini, T.; Goicoechea, J. R.; de Graauw, T.; Hartogh, P.; Helmich, F.; Herczeg, G. J.; Hogerheijde, M. R.; Johnstone, D.; Jørgensen, J. K.; Kristensen, L. E.; Larsson, B.; Lis, D.; Liseau, R.; McCoey, C.; Melnick, G.; Nisini, B.; Olberg, M.; Parise, B.; Pearson, J. C.; Plume, R.; Risacher, C.; Santiago-Garc'ıa, J.; Saraceno, P.; Stutzki, J.; Szczerba, R.; Tafalla, M.; Tielens, A.; van Kempen, T. A.; Visser, R.; Wampfler, S. F.; Willem, J.; Yıldız, U. A.
Title Water in massive star-forming regions: HIFI observations of W3 IRS5 Type Journal Article
Year 2010 Publication Astron. Astrophys. Abbreviated Journal
Volume 521 Issue Pages L37 (1 to 5)
Keywords HEB mixer applications, HIFI, Herschel, stars: formation, stars: massive, ISM: molecules, ISM: abundances, dust, extinction, radio lines: ISM
Abstract We present Herschel observations of the water molecule in the massive star-forming region W3 IRS5. The o-H217O 110-101, p-H218O 111-000, p-H2O 202-111, p-H2O 111-000, o-H2O 221-212, and o-H2O 212-101 lines, covering a frequency range from 552 up to 1669 GHz, have been detected at high spectral resolution with HIFI. The water lines in W3 IRS5 show well-defined high-velocity wings that indicate a clear contribution by outflows. Moreover, the systematically blue-shifted absorption in the H2O lines suggests expansion, presumably driven by the outflow. No infall signatures are detected. The p-H2O 111-000 and o-H2O 212-101 lines show absorption from the cold material (T ~ 10 K) in which the high-mass protostellar envelope is embedded. One-dimensional radiative transfer models are used to estimate water abundances and to further study the kinematics of the region. We show that the emission in the rare isotopologues comes directly from the inner parts of the envelope (T â‰<b3> 100 K) where water ices in the dust mantles evaporate and the gas-phase abundance increases. The resulting jump in the water abundance (with a constant inner abundance of 10-4) is needed to reproduce the o-H217O 110-101 and p-H218O 111-000 spectra in our models. We estimate water abundances of 10-8 to 10-9 in the outer parts of the envelope (T â‰<b2> 100 K). The possibility of two protostellar objects contributing to the emission is discussed.
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Call Number (down) Chav13HEBapplHIFIb Serial 1086
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Kaurova, N.; Rudzinski, M.; Desmaris, V.; Belitsky, V.; Goltsman, G.
Title Improved bandwidth of a 2 THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer Type Journal Article
Year 2019 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 32 Issue 7 Pages 075003
Keywords NbN HEB mixer, GaN buffer layer, sapphire substrate
Abstract We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.
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Call Number (down) Antipov_2019 Serial 1277
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